Maarten Leys

3.4k total citations
141 papers, 2.8k citations indexed

About

Maarten Leys is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Maarten Leys has authored 141 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 99 papers in Electrical and Electronic Engineering, 83 papers in Atomic and Molecular Physics, and Optics and 63 papers in Condensed Matter Physics. Recurrent topics in Maarten Leys's work include Semiconductor Quantum Structures and Devices (75 papers), GaN-based semiconductor devices and materials (56 papers) and Semiconductor materials and devices (55 papers). Maarten Leys is often cited by papers focused on Semiconductor Quantum Structures and Devices (75 papers), GaN-based semiconductor devices and materials (56 papers) and Semiconductor materials and devices (55 papers). Maarten Leys collaborates with scholars based in Belgium, Netherlands and United States. Maarten Leys's co-authors include Stefan Degroote, Kai Cheng, Marianne Germain, Joff Derluyn, G. Borghs, Gustaaf Borghs, Hendrik Veenvliet, M. Van Hove, Domenica Visalli and J. H. Wolter and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Maarten Leys

137 papers receiving 2.7k citations

Peers

Countries citing papers authored by Maarten Leys

Since Specialization

Citations

This map shows the geographic impact of Maarten Leys's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Maarten Leys with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Maarten Leys more than expected).

Fields of papers citing papers by Maarten Leys

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Maarten Leys. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Maarten Leys. The network helps show where Maarten Leys may publish in the future.

Co-authorship network of co-authors of Maarten Leys

This figure shows the co-authorship network connecting the top 25 collaborators of Maarten Leys. A scholar is included among the top collaborators of Maarten Leys based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Maarten Leys. Maarten Leys is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Electrically active defects at AlN/Si interface studied by DLTS and ESR 2012 ·physica status solidi (a) ·Eddy Simoen, Domenica Visalli, M. Van Hove, Maarten Leys, Paola Favia, H. Bender, Gustaaf Borghs, (unknown), A. Stesmans	19
2	(Invited) GaN-on-Si For High-Voltage Applications 2011 ·ECS Transactions ·Domenica Visalli, M. Van Hove, Puneet Srivastava, Denis Marcon, Karen Geens, Xuanwu Kang, (unknown), (unknown), Maarten Leys, Kai Cheng, (unknown), Stefaan Decoutere, Gustaaf Borghs	5
3	(Invited) Epitaxial Growth of III-Nitrides on Silicon Substrates 2010 ·ECS Transactions ·Stefan Degroote, Maarten Leys, Kai Cheng, (unknown), Joff Derluyn, Gustaaf Borghs, Marianne Germain	1
4	Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si<inf>3</inf>N<inf>4</inf> 2009 ·Joff Derluyn, M. Van Hove, Domenica Visalli, Anne Lorenz, Denis Marcon, Puneet Srivastava, Karen Geens, (unknown), (unknown), Xuanwu Kang, J. Das, Farid Medjdoub, Kai Cheng, Stefan Degroote, Maarten Leys, G. Borghs, Marianne Germain	29
5	Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD 2009 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), Stefan Degroote, Maarten Leys, Frank P. Schulte, (unknown), (unknown), Marianne Germain, (unknown), M. Heuken	55
6	Single crystalline GaN grown on porous Si(111) by MOVPE 2007 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Kai Cheng, Stefan Degroote, Maarten Leys, Benny Van Daele, Marianne Germain, Gustaaf Van Tendeloo, G. Borghs	1
7	Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells 2006 ·Journal of Crystal Growth ·(unknown), Maarten Leys, (unknown), (unknown), Gustaaf Borghs	7
8	Investigation of AlN nucleation layers for AlGaN/GaN heterostructures on 4H‐SiC 2006 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Steven Boeykens, Maarten Leys, Marianne Germain, Kai Cheng, Joff Derluyn, Benny Van Daele, Gustaaf Van Tendeloo, Ronnie Belmans, G. Borghs	6
9	The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN 2005 ·Applied Physics Letters ·Benny Van Daele, G. Van Tendeloo, Wouter Ruythooren, Joff Derluyn, Maarten Leys, Marianne Germain	90
10	Fundamental growth kinetics in MOMBE/CBE, MBE and MOVPE 2000 ·Journal of Crystal Growth ·Maarten Leys	6
11	The temperature dependence of noise in InP 1997 ·Solid-State Electronics ·Xuyuan Chen, F.N. Hooge, Maarten Leys	5
12	Epitaxial layer morphology of highly strained GaInAs/InP multiple quantum well structures grown by CBE 1997 ·Microelectronics Journal ·(unknown), F.D. Tichelaar, Maarten Leys, (unknown), (unknown), (unknown), J. H. Wolter	1
13	Strained MQW layers grown by CBE for optical components 1996 ·Journal of Crystal Growth ·(unknown), Y.S. Oei, B.H. Verbeek, J.J.G.M. van der Tol, (unknown), (unknown), Maarten Leys, (unknown), J. H. Wolter	2
14	Cooling reduction due to a rapid density decay of hot carriers in GaAs 1994 ·Semiconductor Science and Technology ·Peter C. M. Christianen, (unknown), H. Bluyssen, P.R. Hageman, Maarten Leys	4
15	Quantum- and transport electron mobility in the individual subbands of a two-dimensional electron gas in Si-δ-doped GaAs 1992 ·Physica B Condensed Matter ·P. M. Koenraad, (unknown), F.A.P. Blom, R. van Dalen, Maarten Leys, J.A.A.J. Perenboom, J. H. Wolter	20
16	Shift of the DX level in narrow Si delta-doped GaAs 1991 ·Semiconductor Science and Technology ·P. M. Koenraad, Wolfgang Lange, F.A.P. Blom, Maarten Leys, J.A.A.J. Perenboom, John Singleton, J. H. Wolter	11
17	Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C 1990 ·Semiconductor Science and Technology ·P. M. Koenraad, F.A.P. Blom, C. J. G. M. Langerak, Maarten Leys, J.A.A.J. Perenboom, John Singleton, (unknown), (unknown), (unknown), J. H. Wolter	56
18	Characterization of silicon δ-doped GaAs grown by MBE at various temperatures 1990 ·Surface Science ·P. M. Koenraad, (unknown), John Singleton, F.A.P. Blom, C. J. G. M. Langerak, Maarten Leys, J.A.A.J. Perenboom, (unknown), (unknown), J. H. Wolter	9
19	Properties of thin strained Ga(As,P) layers 1988 ·Physical review. B, Condensed matter ·M.-E. Pistol, Maarten Leys, Lars Samuelson	21
20	Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactor 1984 ·Journal of Crystal Growth ·Maarten Leys, C. van Opdorp, M. P. A. Viegers, (unknown)	49

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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