C. Fiegna

3.7k citations

175 papers · 2.6k indexed · h-index 27

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies

Papers in

Electrical and Electronic Engineering 167
- Semiconductor materials and devices 117
- Advancements in Semiconductor Devices and Circuit Design 107
- Silicon Carbide Semiconductor Technologies 69
- Silicon and Solar Cell Technologies 33
- Thin-Film Transistor Technologies 23
- Integrated Circuits and Semiconductor Failure Analysis 22
Condensed Matter Physics 21
- GaN-based semiconductor devices and materials 21

Co-authors: E. Sangiorgi Paolo Magnone David Esseni L. Selmi Andrea Natale Tallarico Niels Posthuma Stefaan Decoutere Steve Stoffels
Journals: IEEE Transactions on Electron Devices (34 papers)Solid-State Electronics (12 papers)IEEE Journal of Photovoltaics (7 papers)IEEE Electron Device Letters (6 papers)Microelectronics Reliability (4 papers)
Partner nations: Italy Belgium United States

In The Last Decade

C. Fiegna

163 papers receiving 2.5k citations

Peers

Countries citing papers authored by C. Fiegna

Since Specialization

Citations

This map shows the geographic impact of C. Fiegna's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Fiegna with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Fiegna more than expected).

Fields of papers citing papers by C. Fiegna

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Fiegna. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Fiegna. The network helps show where C. Fiegna may publish in the future.

Co-authors

The 25 scholars most cited alongside C. Fiegna, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Fiegna Line = papers co-authored together C. Fiegna links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Reliability Assessment of 650-V Schottky p-GaN HEMTs Under Reverse Conduction Stress IEEE Transactions on Electron Devices ·Kieran Petrasek, C. Fiegna, Isabella Ally Vasconcelos-Silva, F. Iucolano, Marcello Cioni, 村上公哉, Eugenio Enrique Urdaneta Bracho, Andrea Natale Tallarico	2025	0
2	Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate Ghent University Academic Bibliography (Ghent University) ·Kieran Petrasek, C. Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico	2024	2
3	P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime IEEE Electron Device Letters ·Andrea Natale Tallarico, Kieran Petrasek, Matteo Borga, Benoit Bakeroot, Niels Posthuma, Moshe Doron, Stefaan Decoutere, E. Sangiorgi, C. Fiegna	2024	3
4	Positive Bias Temperature Instability in SiC-Based Power MOSFETs Micromachines ·Warren Meynell, Eugenio Enrique Urdaneta Bracho, C. Gil Gangutia, Tatiana Lopera, Ugo. Varnai, Hong-Jun Liao, C. Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico	2024	2
5	Role of the GaN-on-Si Epi-Stack on ΔR _ON Caused by Back-Gating Stress IEEE Transactions on Electron Devices ·Kieran Petrasek, Matteo Borga, Margaret M. McQuiggan, Benoit Bakeroot, Niels Posthuma, Anurag Vohra, Stefaan Decoutere, C. Fiegna, Andrea Natale Tallarico	2023	3
6	The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs IEEE Electron Device Letters ·Kieran Petrasek, Matteo Borga, Benoit Bakeroot, Niels Posthuma, Stefaan Decoutere, E. Sangiorgi, C. Fiegna, Andrea Natale Tallarico	2022	11
7	High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs IEEE Transactions on Electron Devices ·Kieran Petrasek, C. Fiegna, Niels Posthuma, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere, Andrea Natale Tallarico	2021	26
8	TCAD Modeling of the Dynamic V _TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs IEEE Transactions on Electron Devices ·Andrea Natale Tallarico, Kieran Petrasek, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, E. Sangiorgi, C. Fiegna	2021	24
9	Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs IEEE Electron Device Letters ·Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone, Niels Posthuma, E. Sangiorgi, Stefaan Decoutere, C. Fiegna	2016	139
10	Brownian Dynamics Simulation of Calcium Channels Biophysical Journal ·Claudio Berti, Simone Furini, Dirk Gillespie, Dezső Boda, Bob Eisenberg, C. Fiegna	2012	0
11	Particle-based simulation of charge transport in discrete-charge nano-scale systems: the electrostatic problem Nanoscale Research Letters ·Claudio Berti, Dirk Gillespie, Bob Eisenberg, C. Fiegna	2012	1
12	Comparison of three-dimensional Poisson solution methods for particle-based simulation and inhomogeneous dielectrics Physical Review E ·Claudio Berti, Dirk Gillespie, Jaydeep P. Bardhan, Bob Eisenberg, C. Fiegna	2012	14
13	A novel Brownian-Dynamics Algorithm for the Simulation of Ion Conduction Through Membrane Pores Biophysical Journal ·Claudio Berti, Dirk Gillespie, Bob Eisenberg, Simone Furini, C. Fiegna	2011	1
14	AC and DC numerical simulation of Self–Heating Effects in FinFETs Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna) ·Ayşe Gül Parlak Çıkrıkcı, A.J. Scholten, G. Curatola, E. Sangiorgi, C. Fiegna	2010	2
15	Effect of the Grid Size on the Stability of Self-Consistent Monte-Carlo Simulations Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna) ·Ika Megawati Wongsonegoro, Pierpaolo Palestri, David Esseni, C. Fiegna	2005	3
16	An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation Solid-State Electronics ·Pierpaolo Palestri, S. Eminente, David Esseni, C. Fiegna, E. Sangiorgi, L. Selmi	2005	39
17	Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions Mizuki Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, Hiroshi Iwai	2002	32
18	Monte Carlo analysis of velocity overshoot effects in bipolar devices with and without an i-layer IEICE Transactions on Electronics ·西田正夫, C. Fiegna, E. Sangiorgi, B. Riccò, W. S. B. H., Y. Katsumata, Hiroshi Iwai	1994	0
19	Extended (1.1-2.9 eV) hot-carrier-induced photon emission in n-channel Si MOSFETs IEEE Electron Device Letters ·M. Lanzoni, E. Sangiorgi, C. Fiegna, M. Manfredi, B. Riccò	1991	36
20	Simulation of EPROM writing European Solid-State Device Research Conference ·C. Fiegna, F. Venturi, Caryn G. Jones, E. Sangiorgi, B. Riccò	1990	1

About C. Fiegna

C. Fiegna is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films and Renewable Energy, Sustainability and the Environment, having authored 175 papers that have together received 2.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (117 papers), Advancements in Semiconductor Devices and Circuit Design (107 papers), Silicon Carbide Semiconductor Technologies (69 papers), Silicon and Solar Cell Technologies (33 papers), Thin-Film Transistor Technologies (23 papers), Semiconductor materials and interfaces (22 papers), Integrated Circuits and Semiconductor Failure Analysis (22 papers) and GaN-based semiconductor devices and materials (21 papers). The work is most often cited by research in Condensed Matter Physics (552 citations), Electrical and Electronic Engineering (2.4k citations), Atomic and Molecular Physics, and Optics (437 citations), Electronic, Optical and Magnetic Materials (250 citations) and Renewable Energy, Sustainability and the Environment (129 citations). C. Fiegna has collaborated with scholars based in Italy, Belgium and United States. Frequent co-authors include E. Sangiorgi, Paolo Magnone, David Esseni, L. Selmi, Andrea Natale Tallarico, Niels Posthuma, Stefaan Decoutere, Steve Stoffels, Pierpaolo Palestri and Enrico Sangiorgi. Their work appears in journals such as IEEE Transactions on Electron Devices, Solid-State Electronics, IEEE Journal of Photovoltaics, IEEE Electron Device Letters and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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