D. Pogány

3.9k citations

208 papers · 3.2k indexed · h-index 32

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 75
Acoustics and Ultrasonics top 2%
Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices 129
- Electrostatic Discharge in Electronics 91
- Integrated Circuits and Semiconductor Failure Analysis 70
- Advancements in Semiconductor Devices and Circuit Design 70
- Silicon Carbide Semiconductor Technologies 37
- Thin-Film Transistor Technologies 17
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 26
Atomic and Molecular Physics, and Optics top 5%

Co-authors: J. Kuzmı́k E. Gornik Clemens Ostermaier S. Bychikhin G. Strasser P. Lagger Gregor Pobegen N. Grandjean
Cited by: Condensed Matter Physics Acoustics and Ultrasonics Electrical and Electronic Engineering
Journals: Microelectronics Reliability (41 papers)IEEE Transactions on Electron Devices (17 papers)Applied Physics Letters (16 papers)
Partner nations: Austria Germany Slovakia

In The Last Decade

D. Pogány

199 papers receiving 3.1k citations

Peers

Countries citing papers authored by D. Pogány

Since Specialization

Citations

This map shows the geographic impact of D. Pogány's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Pogány with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Pogány more than expected).

Fields of papers citing papers by D. Pogány

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Pogány. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Pogány. The network helps show where D. Pogány may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Pogány, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Pogány Line = papers co-authored together D. Pogány links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Analyzing the role of hole injection on the short circuit performance of p-GaN gate power HEMTs Microelectronics Reliability ·Darryl Wieland,Ather Naqvi,Miranda Phan,正二〓山,D. Pogány,Clemens Ostermaier	2025	0
2	On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices Journal of Applied Physics ·Miranda Phan,Eduard Tornero,Denes Nagy,Lyng Heidi,Frank Altmann,R. Neumann,Aidan A. Taylor,D. Pogány,Clemens Ostermaier	2024	1
3	Evidence‐Based Understanding of Lateral Hole Transport During OFF‐State Stress Completing Dynamic GaN‐on‐Si Buffer Charging Model physica status solidi (a) ·Ather Naqvi,Adolf Haas,D. Pogány,Jianxin He,Gregor Pobegen,Clemens Ostermaier,正二〓山	2024	3
4	Influence of Hole Injection on Associated Recovery Phenomena in GaN-Based GITs Subjected to Hot Electron Trapping Elaine Ferreira do Nascimento,VG Ram,D. Pogány,Clemens Ostermaier,Ather Naqvi,正二〓山,Michael Waltl	2024	0
5	Test concept for a direct correlation between dislocations and the intrinsic degradation of lateral PIN diodes in GaN-on-Si under reverse bias Microelectronics Reliability ·Miranda Phan,Eduard Tornero,Frank Altmann,Denes Nagy,Hoffpauir,Aidan A. Taylor,Darryl Wieland,D. Pogány,Clemens Ostermaier	2023	3
6	Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors Applied Physics Letters ·Solomon Ayantayo Ojo,Masiar Sistani,Alois Lugstein,健興酒井,M. den Hertog,D. Pogány,W. Weber	2023	1
7	A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests Darryl Wieland,张梁平,Miranda Phan,Ather Naqvi,正二〓山,李小锋,郑伟栋,Karen M. Reiser,Oliver D. Häberlen,Michael Nelhiebel,Damien Chevanne,D. Pogány,Clemens Ostermaier	2023	3
8	Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants IEEE Transactions on Electron Devices ·Ather Naqvi,VG Ram,D. Pogány,Gregor Pobegen,Clemens Ostermaier,正二〓山	2022	12
9	Enhancement of V<inf>th</inf> drift for repetitive gate stress pulses due to charge feedback effect in GaN MIS-HEMTs P. Lagger,Clemens Ostermaier,D. Pogány	2014	10
10	Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors Applied Physics Letters ·Ulf Underland,M. Kiełt,Oliver Hilt,Gaudenzio Meneghesso,Enrico Zanoni,Joachim Würfl,G. Strasser,D. Pogány	2012	13
11	ESD robust DeMOS devices in advanced CMOS technologies Electrical Overstress/Electrostatic Discharge Symposium ·Mayank Shrivastava,Christian Russ,Harald Goßner,S. Bychikhin,D. Pogány,E. Gornik	2011	18
12	Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond Journal of Applied Physics ·J. Kuzmı́k,S. Bychikhin,D. Pogány,Misara El Kady,O. Lancry,Christophe Gaquière,Sabato Luciano,G. Deligeorgis,A. Georgakilas	2011	34
13	Electro-thermal characterization and simulation of integrated multi trenched XtreMOS power devices R. H. Orton,Madhava,Nicholas Milano,S. Bychikhin,Georg Haberfehlner,D. Pogány,B. Desoete,Renaud Gillon,乐钟,M. Tack	2010	5
14	IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures Microelectronics Reliability ·Helmut Köck,柳亚杰,Leah Kurtzman,Damien Chevanne,D. Pogány	2009	10
15	Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO ₂ high- k gate dielectrics Electronics Letters ·S. Abermann,G. Pozzovivo,J. Kuzmı́k,Clemens Ostermaier,Christoph Henkel,Ole Bethge,G. Strasser,D. Pogány,J.‐F. Carlin,N. Grandjean,E. Bertagnolli	2009	16
16	Avalanche Breakdown Delay in High-Voltage p-n Junctions Caused by Pre-Pulse Voltage From IEC 61000-4-2 ESD Generators IEEE Transactions on Device and Materials Reliability ·Isabelle Bell,ChristianLallemant,Joost Willemen,Cosima Bauer,D. Pogány,E. Gornik,M. Stecher	2009	6
17	Analysis of the triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices Research Padua Archive (University of Padua) ·Muhammad Munib Ur Rehman,S. Bychikhin,D. H. Miller,D. Pogány,E. Gornik,高岡秀子,T. A. Kolodkin,Takehiko Inada,A. Andreini,Augusto Tazzoli,Gaudenzio Meneghesso	2006	8
18	Coupled bipolar transistors as very robust ESD protection devices for automotive applications Electrical Overstress/Electrostatic Discharge Symposium ·N. Jensen,G. Groos,M. Denison,J. Kuzmı́k,D. Pogány,E. Gornik,M. Stecher	2003	15
19	Study of trigger instabilities in smart power technology ESD protection devices using a laser interferometric thermal mapping technique Electrical Overstress/Electrostatic Discharge Symposium ·D. Pogány,Sivagowry shathesh,Martin Litzenberger,G. Groos,Kai Esmark,Lorraine Souza de Oliveira,Harald Goßner,M. Stecher,E. Gornik	2001	12
20	Study of bipolar transistor action during ESD stress in smart power ESD protection devices using interferometric temperature mapping European Solid-State Device Research Conference ·Sivagowry shathesh,Martin Litzenberger,D. Pogány,E. Gornik,LI Baod,Harald Goßner,M. Stecher,Н.Ю. Кудеярова Сударев	1999	0

About D. Pogány

D. Pogány is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Acoustics and Ultrasonics and Atomic and Molecular Physics, and Optics, having authored 208 papers that have together received 3.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (129 papers), Electrostatic Discharge in Electronics (91 papers), GaN-based semiconductor devices and materials (75 papers), Integrated Circuits and Semiconductor Failure Analysis (70 papers), Advancements in Semiconductor Devices and Circuit Design (70 papers), Silicon Carbide Semiconductor Technologies (37 papers), Ga2O3 and related materials (26 papers) and Thin-Film Transistor Technologies (17 papers). The work is most often cited by research in Condensed Matter Physics (1.9k citations), Acoustics and Ultrasonics (68 citations), Electrical and Electronic Engineering (2.7k citations), Electronic, Optical and Magnetic Materials (791 citations) and Atomic and Molecular Physics, and Optics (556 citations). D. Pogány has collaborated with scholars based in Austria, Germany and Slovakia. Frequent co-authors include J. Kuzmı́k, E. Gornik, Clemens Ostermaier, S. Bychikhin, G. Strasser, P. Lagger, Gregor Pobegen, N. Grandjean, M. Stecher and G. Pozzovivo. Their work appears in journals such as Microelectronics Reliability, IEEE Transactions on Electron Devices, Applied Physics Letters, Journal of Applied Physics and Solid-State Electronics.

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