D. Pogány

3.9k total citations
208 papers, 3.2k citations indexed

About

D. Pogány is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Pogány has authored 208 papers receiving a total of 3.2k indexed citations (citations by other indexed papers that have themselves been cited), including 193 papers in Electrical and Electronic Engineering, 75 papers in Condensed Matter Physics and 26 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Pogány's work include Semiconductor materials and devices (129 papers), Electrostatic Discharge in Electronics (91 papers) and GaN-based semiconductor devices and materials (75 papers). D. Pogány is often cited by papers focused on Semiconductor materials and devices (129 papers), Electrostatic Discharge in Electronics (91 papers) and GaN-based semiconductor devices and materials (75 papers). D. Pogány collaborates with scholars based in Austria, Germany and Slovakia. D. Pogány's co-authors include J. Kuzmı́k, E. Gornik, Clemens Ostermaier, S. Bychikhin, G. Strasser, P. Lagger, Gregor Pobegen, N. Grandjean, M. Stecher and G. Pozzovivo and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D. Pogány

199 papers receiving 3.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Pogány Austria 32 2.7k 1.9k 791 556 515 208 3.2k
Paul L. Voss United States 29 1.4k 0.5× 781 0.4× 396 0.5× 1.1k 2.0× 778 1.5× 130 2.7k
Shun‐Lien Chuang United States 24 1.2k 0.5× 939 0.5× 361 0.5× 1.7k 3.0× 587 1.1× 61 2.4k
Francesco Bertazzi Italy 25 1.3k 0.5× 1.1k 0.6× 437 0.6× 1.0k 1.9× 589 1.1× 133 2.1k
Uwe Strauß Germany 24 1.1k 0.4× 1.2k 0.6× 254 0.3× 1.2k 2.2× 288 0.6× 118 1.9k
A. Strittmatter Germany 29 1.5k 0.6× 1.0k 0.5× 469 0.6× 1.7k 3.1× 760 1.5× 150 2.8k
Sébastien Chenot France 25 911 0.3× 1.3k 0.7× 1.3k 1.7× 855 1.5× 483 0.9× 107 2.4k
P. de Mierry France 26 873 0.3× 1.6k 0.9× 1.1k 1.4× 807 1.5× 843 1.6× 105 2.4k
Yasunori Tokuda Japan 21 1.1k 0.4× 526 0.3× 465 0.6× 657 1.2× 257 0.5× 130 1.6k
Mathias Weiler Germany 28 1.3k 0.5× 915 0.5× 1.2k 1.5× 2.9k 5.2× 618 1.2× 71 3.3k
M. Sabathil Germany 20 1.3k 0.5× 1.4k 0.7× 405 0.5× 1.8k 3.2× 765 1.5× 43 2.5k

Countries citing papers authored by D. Pogány

Since Specialization
Citations

This map shows the geographic impact of D. Pogány's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Pogány with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Pogány more than expected).

Fields of papers citing papers by D. Pogány

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Pogány. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Pogány. The network helps show where D. Pogány may publish in the future.

Co-authorship network of co-authors of D. Pogány

This figure shows the co-authorship network connecting the top 25 collaborators of D. Pogány. A scholar is included among the top collaborators of D. Pogány based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Pogány. D. Pogány is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wieland, Darryl, et al.. (2025). Analyzing the role of hole injection on the short circuit performance of p-GaN gate power HEMTs. Microelectronics Reliability. 169. 115722–115722.
2.
Altmann, Frank, et al.. (2024). On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices. Journal of Applied Physics. 135(2). 1 indexed citations
3.
4.
5.
Altmann, Frank, et al.. (2023). Test concept for a direct correlation between dislocations and the intrinsic degradation of lateral PIN diodes in GaN-on-Si under reverse bias. Microelectronics Reliability. 150. 115071–115071. 3 indexed citations
6.
Sistani, Masiar, et al.. (2023). Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors. Applied Physics Letters. 122(24). 1 indexed citations
7.
Wieland, Darryl, Karen M. Reiser, Oliver D. Häberlen, et al.. (2023). A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests. 1–6. 3 indexed citations
8.
Pogány, D., et al.. (2022). Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants. IEEE Transactions on Electron Devices. 69(6). 3087–3093. 12 indexed citations
9.
Lagger, P., Clemens Ostermaier, & D. Pogány. (2014). Enhancement of V<inf>th</inf> drift for repetitive gate stress pulses due to charge feedback effect in GaN MIS-HEMTs. 6C.3.1–6C.3.6. 10 indexed citations
10.
Hilt, Oliver, Gaudenzio Meneghesso, Enrico Zanoni, et al.. (2012). Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 100(14). 13 indexed citations
11.
Shrivastava, Mayank, Christian Russ, Harald Goßner, et al.. (2011). ESD robust DeMOS devices in advanced CMOS technologies. Electrical Overstress/Electrostatic Discharge Symposium. 1–10. 18 indexed citations
12.
Kuzmı́k, J., S. Bychikhin, D. Pogány, et al.. (2011). Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond. Journal of Applied Physics. 109(8). 34 indexed citations
13.
Bychikhin, S., Georg Haberfehlner, D. Pogány, et al.. (2010). Electro-thermal characterization and simulation of integrated multi trenched XtreMOS power devices. 1–4. 5 indexed citations
14.
Köck, Helmut, et al.. (2009). IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures. Microelectronics Reliability. 49(9-11). 1132–1136. 10 indexed citations
15.
Abermann, S., G. Pozzovivo, J. Kuzmı́k, et al.. (2009). Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO 2 high- k gate dielectrics. Electronics Letters. 45(11). 570–572. 16 indexed citations
16.
Willemen, Joost, et al.. (2009). Avalanche Breakdown Delay in High-Voltage p-n Junctions Caused by Pre-Pulse Voltage From IEC 61000-4-2 ESD Generators. IEEE Transactions on Device and Materials Reliability. 9(3). 412–418. 6 indexed citations
17.
Bychikhin, S., D. Pogány, E. Gornik, et al.. (2006). Analysis of the triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices. Research Padua Archive (University of Padua). 275–284. 8 indexed citations
18.
Jensen, N., G. Groos, M. Denison, et al.. (2003). Coupled bipolar transistors as very robust ESD protection devices for automotive applications. Electrical Overstress/Electrostatic Discharge Symposium. 1–6. 15 indexed citations
19.
Pogány, D., Martin Litzenberger, G. Groos, et al.. (2001). Study of trigger instabilities in smart power technology ESD protection devices using a laser interferometric thermal mapping technique. Electrical Overstress/Electrostatic Discharge Symposium. 214–225. 12 indexed citations
20.
Litzenberger, Martin, et al.. (1999). Study of bipolar transistor action during ESD stress in smart power ESD protection devices using interferometric temperature mapping. European Solid-State Device Research Conference. 1. 596–599.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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