E. Sangiorgi

3.1k citations

119 papers · 2.3k indexed · h-index 27

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Electrical and Electronic Engineering 112
- Semiconductor materials and devices 94
- Advancements in Semiconductor Devices and Circuit Design 87
- Silicon Carbide Semiconductor Technologies 62
- Integrated Circuits and Semiconductor Failure Analysis 19
- Electrostatic Discharge in Electronics 9
Condensed Matter Physics 12
- GaN-based semiconductor devices and materials 12

Co-authors: C. Fiegna L. Selmi David Esseni B. Riccò Andrea Natale Tallarico F. Venturi Niels Posthuma Stefaan Decoutere
Journals: IEEE Transactions on Electron Devices (27 papers)IEEE Electron Device Letters (12 papers)Solid-State Electronics (9 papers)IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (4 papers)Microelectronics Reliability (3 papers)
Partner nations: Italy United States Belgium

In The Last Decade

E. Sangiorgi

112 papers receiving 2.2k citations

Peers

Countries citing papers authored by E. Sangiorgi

Since Specialization

Citations

This map shows the geographic impact of E. Sangiorgi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Sangiorgi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Sangiorgi more than expected).

Fields of papers citing papers by E. Sangiorgi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Sangiorgi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Sangiorgi. The network helps show where E. Sangiorgi may publish in the future.

Co-authorship network

The 25 scholars most cited alongside E. Sangiorgi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Sangiorgi Line = papers co-authored together E. Sangiorgi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime IEEE Electron Device Letters ·Andrea Natale Tallarico, Kieran Petrasek, Matteo Borga, Benoit Bakeroot, Niels Posthuma, Moshe Doron, Stefaan Decoutere, E. Sangiorgi, C. Fiegna	2024	3
2	Characterization of the Dynamic RON of 600 V GaN Switches under Operating Conditions Electronics ·Zeel Patel, Alberto Santarelli, E. Sangiorgi, Corrado Florian	2023	4
3	The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs IEEE Electron Device Letters ·Kieran Petrasek, Matteo Borga, Benoit Bakeroot, Niels Posthuma, Stefaan Decoutere, E. Sangiorgi, C. Fiegna, Andrea Natale Tallarico	2022	11
4	TCAD Modeling of the Dynamic V _TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs IEEE Transactions on Electron Devices ·Andrea Natale Tallarico, Kieran Petrasek, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, E. Sangiorgi, C. Fiegna	2021	24
5	Optimum Design Rules for CMOS Hall Sensors Sensors ·Marco Crescentini, A. Ovtracht, Aldo Romani, Marco Tartagni, E. Sangiorgi	2017	26
6	Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs IEEE Electron Device Letters ·Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone, Niels Posthuma, E. Sangiorgi, Stefaan Decoutere, C. Fiegna	2016	139
7	Physical simulations of response time in Hall sensor devices Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna) ·Marco Crescentini, Aldo Romani, E. Sangiorgi	2014	13
8	Understanding negative bias temperature stress in p-channel trench-gate power MOSFETs by low-frequency noise measurement Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna) ·Paolo Magnone, Медведев Игорь Федорович, Pier Andrea Traverso, Andreu Corpas Amills, E. Sangiorgi, C. Fiegna	2014	5
9	Analytical drain current model reproducing advanced transport models in nanoscale cylindrical surrounding-gate (SRG) MOSFETs Journal of Applied Physics ·Pia Sturm, Giuseppe Iannaccone, E. Sangiorgi, Benjamı́n Iñı́guez	2011	4
10	AC and DC numerical simulation of Self–Heating Effects in FinFETs Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna) ·Ayşe Gül Parlak Çıkrıkcı, A.J. Scholten, G. Curatola, E. Sangiorgi, C. Fiegna	2010	2
11	Reduction of RTS Noise in Small-Area MOSFETs Under Switched Bias Conditions and Forward Substrate Bias IEEE Transactions on Electron Devices ·Nicola Zanolla, Takashi Iwama, Marc Tiebout, Ms. Priyanka Biswas, E. Sangiorgi, C. Fiegna	2010	13
12	Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation IEEE Transactions on Electron Devices ·C. Fiegna, Yang Yang, E. Sangiorgi, A.G. O’Neill	2008	119
13	An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation Solid-State Electronics ·Pierpaolo Palestri, S. Eminente, David Esseni, C. Fiegna, E. Sangiorgi, L. Selmi	2005	39
14	Monte Carlo analysis of velocity overshoot effects in bipolar devices with and without an i-layer IEICE Transactions on Electronics ·西田正夫, C. Fiegna, E. Sangiorgi, B. Riccò, W. S. B. H., Y. Katsumata, Hiroshi Iwai	1994	0
15	Simulation of EPROM writing European Solid-State Device Research Conference ·C. Fiegna, F. Venturi, Caryn G. Jones, E. Sangiorgi, B. Riccò	1990	1
16	Layout dependence of CMOS latchup IEEE Transactions on Electron Devices ·R. Menozzi, L. Selmi, E. Sangiorgi, A. Reis, 金延锋, B. Riccò	1988	27
17	A hot-carrier analysis of submicrometer MOSFET's IEEE Electron Device Letters ·E. Sangiorgi, M.R. Pinto, F. Venturi, Wolf Fïchtner	1988	20
18	Hysteresis cycle in the latch-up characteristic of wide CMOS structures IEEE Electron Device Letters ·L. Selmi, E. Sangiorgi, A. Reis, D. Del Re, B. Riccò	1988	4
19	A Monte Carlo Approach to the Study of the Drift-Diffusion Transport Model European Solid-State Device Research Conference ·刘川云, F. Venturi, B. Riccò, E. Sangiorgi	1987	3
20	Three Dimensional Distribution of Latch-Up Current in Scaled CMOS Structures Institutional Research Information System (University of Udine) ·L. Selmi, F. Venturi, E. Sangiorgi, B. Riccò	1987	1

About E. Sangiorgi

E. Sangiorgi is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Hardware and Architecture, Surfaces, Coatings and Films and Atomic and Molecular Physics, and Optics, having authored 119 papers that have together received 2.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (94 papers), Advancements in Semiconductor Devices and Circuit Design (87 papers), Silicon Carbide Semiconductor Technologies (62 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers), GaN-based semiconductor devices and materials (12 papers), Electrostatic Discharge in Electronics (9 papers), Semiconductor materials and interfaces (5 papers) and Sensor Technology and Measurement Systems (4 papers). The work is most often cited by research in Condensed Matter Physics (433 citations), Electrical and Electronic Engineering (2.1k citations), Electronic, Optical and Magnetic Materials (202 citations), Atomic and Molecular Physics, and Optics (305 citations) and Biomedical Engineering (217 citations). E. Sangiorgi has collaborated with scholars based in Italy, United States and Belgium. Frequent co-authors include C. Fiegna, L. Selmi, David Esseni, B. Riccò, Andrea Natale Tallarico, F. Venturi, Niels Posthuma, Stefaan Decoutere, A. Abramo and G. K. Celler. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Solid-State Electronics, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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