Jungwoo Joh

2.7k citations

40 papers · 2.2k indexed · 1 hit paper · h-index 20

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 34
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 12
- Copper Interconnects and Reliability 5
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 28
- Silicon Carbide Semiconductor Technologies 16
- Advancements in Semiconductor Devices and Circuit Design 3
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 5
Materials Chemistry top 10%
- ZnO doping and properties 6

Co-authors: Jesús A. del Alamo J. L. Jiménez Carl V. Thompson Tomás Palacios Ling Xia Prashanth Makaram S. Pendharkar Hua-Quen Tserng
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Transactions on Electron Devices (5 papers)Microelectronics Reliability (5 papers)Applied Physics Letters (4 papers)
Partner nations: United States South Korea

In The Last Decade

Jungwoo Joh

38 papers receiving 2.1k citations

Hit Papers

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Peers

Countries citing papers authored by Jungwoo Joh

Since Specialization

Citations

This map shows the geographic impact of Jungwoo Joh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jungwoo Joh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jungwoo Joh more than expected).

Fields of papers citing papers by Jungwoo Joh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jungwoo Joh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jungwoo Joh. The network helps show where Jungwoo Joh may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Jungwoo Joh, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jungwoo Joh Line = papers co-authored together Jungwoo Joh links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs ECS Transactions ·Nofri Bernando,H. Shichijo,Jungwoo Joh,千城道岡,Moon J. Kim	2023	2
2	Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs IEEE Transactions on Electron Devices ·Siddhartha Sankar Baruah,Jungwoo Joh,S. Krishnan,S. Pendharkar,Christine M. Jackson,Steven A. Ringel,Aaron R. Arehart	2019	15
3	Current Crowding Impact on Electromigration in Al Interconnects Young-Joon Park,Jungwoo Joh,石志民,S. Krishnan	2019	2
4	Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature IEEE Transactions on Electron Devices ·Liliya Hisanova,Katrin Hahn-Laudenberg,Jungwoo Joh,S. Krishnan,S. Pendharkar,Jesús A. del Alamo	2017	15
5	Application reliability validation of GaN power devices S.R. Bahl,Jungwoo Joh,Lixing Fu,A. Sasikumar,恩地勝,S. Pendharkar	2016	38
6	Electromigration in strapped metal layers with large dimensions for lateral power device applications Al Doseri S,Jungwoo Joh,Vladimir V. Bukatin	2014	2
7	Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications Jungwoo Joh,N. Tipirneni,S. Pendharkar,S. Krishnan	2014	41
8	A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees C. Papadimitriou,Kingsley S. Hall,John S. Baras,Jungwoo Joh	2014	1
9	Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale IEEE Transactions on Electron Devices ·И. К. Брудер,Tyler A. Merz,Horace Gunthorf,Jungwoo Joh,Jesús A. del Alamo,Umesh K. Mishra,L. J. Brillson	2012	16
10	RF power degradation of GaN High Electron Mobility Transistors Jungwoo Joh,Jesús A. del Alamo	2010	34
11	High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate Microelectronics Reliability ·Jay Lal,Jungwoo Joh,Jesús A. del Alamo	2010	30
12	A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors IEEE Transactions on Electron Devices ·Jungwoo Joh,Jesús A. del Alamo	2010	345
13	Role of stress voltage on structural degradation of GaN high-electron-mobility transistors Microelectronics Reliability ·Jungwoo Joh,Jesús A. del Alamo,Kurt Langworthy,Haowei Wang,Tsvetanka Zheleva	2010	44
14	GaN HEMT reliabilitybreakdown → Microelectronics Reliability ·Jesús A. del Alamo,Jungwoo Joh	2009	412
15	Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors Applied Physics Letters ·И. К. Брудер,Tyler A. Merz,Horace Gunthorf,Michael Hetzer,Jungwoo Joh,Jesús A. del Alamo,Umesh K. Mishra,L. J. Brillson	2009	25
16	A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors IEEE Electron Device Letters ·Jungwoo Joh,Jesús A. del Alamo,J. L. Jiménez	2008	91
17	Correlation between RF and DC reliability in GaN high electron mobility transistors Jungwoo Joh,Jesús A. del Alamo,Cristina Manzuoli,J. L. Jiménez	2008	15
18	Progress in GaN devices performances and reliability Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·P. Saunier,A. B. Ogunfeibo,J. L. Jiménez,雷发强,D.C. Dumka,H.Q. Tserng,Ming-Yih Kao,U. Chowdhury,P.C. Chao,K. Chu,Tianxin Chen,I. Eliashevich,Shiping Guo,Jesús A. del Alamo,Jungwoo Joh,M. S. Shur	2008	1
19	Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors Jungwoo Joh,Cristina Manzuoli,Tso-Min Chou,Hua-Quen Tserng,J. L. Jiménez	2007	6
20	Progress in GaN Performances and Reliability P. Saunier,اسراء صباح,雷发强,D.C. Dumka,J. L. Jiménez,H.Q. Tserng,Jongpyo Park,P.C. Chao,K. Chu,Tianxin Chen,I. Eliashevich,Shiping Guo,Jesús A. del Alamo,Jungwoo Joh,M. S. Shur	2007	30

About Jungwoo Joh

Jungwoo Joh is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 40 papers that have together received 2.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (28 papers), Silicon Carbide Semiconductor Technologies (16 papers), Ga2O3 and related materials (12 papers), ZnO doping and properties (6 papers), Copper Interconnects and Reliability (5 papers), Semiconductor Quantum Structures and Devices (5 papers) and Advancements in Semiconductor Devices and Circuit Design (3 papers). The work is most often cited by research in Condensed Matter Physics (2.1k citations), Electronic, Optical and Magnetic Materials (663 citations) and Electrical and Electronic Engineering (1.8k citations). Jungwoo Joh has collaborated with scholars based in United States and South Korea. Frequent co-authors include Jesús A. del Alamo, J. L. Jiménez, Carl V. Thompson, Tomás Palacios, Ling Xia, Prashanth Makaram, S. Pendharkar, Hua-Quen Tserng, Tso-Min Chou and S. Krishnan. Their work appears in journals such as IEEE Transactions on Electron Devices, Microelectronics Reliability, Applied Physics Letters, IEEE Electron Device Letters and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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