Jungwoo Joh

2.7k citations

40 papers · 2.2k indexed · 1 hit paper · h-index 20

Condensed Matter Physics top 0.5%
Electrical and Electronic Engineering top 2%
Electronic, Optical and Magnetic Materials top 5%
Atomic and Molecular Physics, and Optics top 5%
Materials Chemistry top 10%

Co-authors: Jesús A. del Alamo J. L. Jiménez Carl V. Thompson Tomás Palacios Ling Xia Prashanth Makaram S. Pendharkar Hua-Quen Tserng
Topics: GaN-based semiconductor devices and materials (34 papers)Semiconductor materials and devices (28 papers)Silicon Carbide Semiconductor Technologies (16 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters IEEE Transactions on Electron Devices IEEE Electron Device Letters
Partner nations: United States South Korea

In The Last Decade

Jungwoo Joh

38 papers receiving 2.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

GaN HEMT reliability

2009 412 citations Jesús A. del Alamo, Jungwoo Joh Microelectronics Reliability profile →

Peers

Countries citing papers authored by Jungwoo Joh

Since Specialization

Citations

This map shows the geographic impact of Jungwoo Joh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jungwoo Joh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jungwoo Joh more than expected).

Fields of papers citing papers by Jungwoo Joh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jungwoo Joh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jungwoo Joh. The network helps show where Jungwoo Joh may publish in the future.

Co-authorship network of co-authors of Jungwoo Joh

This figure shows the co-authorship network connecting the top 25 collaborators of Jungwoo Joh. A scholar is included among the top collaborators of Jungwoo Joh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jungwoo Joh. Jungwoo Joh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs 2023 ·ECS Transactions ·(unknown),H. Shichijo,Jungwoo Joh,(unknown),Moon J. Kim	2
2	Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs 2019 ·IEEE Transactions on Electron Devices ·(unknown),Jungwoo Joh,S. Krishnan,S. Pendharkar,Christine M. Jackson,Steven A. Ringel,Aaron R. Arehart	15
3	Current Crowding Impact on Electromigration in Al Interconnects 2019 ·Young-Joon Park,Jungwoo Joh,(unknown),S. Krishnan	2
4	Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature 2017 ·IEEE Transactions on Electron Devices ·(unknown),(unknown),Jungwoo Joh,S. Krishnan,S. Pendharkar,Jesús A. del Alamo	15
5	Application reliability validation of GaN power devices 2016 ·S.R. Bahl,Jungwoo Joh,Lixing Fu,A. Sasikumar,(unknown),S. Pendharkar	38
6	Electromigration in strapped metal layers with large dimensions for lateral power device applications 2014 ·(unknown),Jungwoo Joh,(unknown)	2
7	Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications 2014 ·Jungwoo Joh,N. Tipirneni,S. Pendharkar,S. Krishnan	41
8	A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees 2014 ·(unknown),(unknown),John S. Baras,Jungwoo Joh	1
9	Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale 2012 ·IEEE Transactions on Electron Devices ·(unknown),Tyler A. Merz,(unknown),Jungwoo Joh,Jesús A. del Alamo,Umesh K. Mishra,L. J. Brillson	16
10	RF power degradation of GaN High Electron Mobility Transistors 2010 ·Jungwoo Joh,Jesús A. del Alamo	34
11	High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate 2010 ·Microelectronics Reliability ·(unknown),Jungwoo Joh,Jesús A. del Alamo	30
12	A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors 2010 ·IEEE Transactions on Electron Devices ·Jungwoo Joh,Jesús A. del Alamo	345
13	Role of stress voltage on structural degradation of GaN high-electron-mobility transistors 2010 ·Microelectronics Reliability ·Jungwoo Joh,Jesús A. del Alamo,Kurt Langworthy,(unknown),Tsvetanka Zheleva	44
14	GaN HEMT reliabilitybreakdown → 2009 ·Microelectronics Reliability ·Jesús A. del Alamo,Jungwoo Joh	412
15	Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors 2009 ·Applied Physics Letters ·(unknown),Tyler A. Merz,(unknown),Michael Hetzer,Jungwoo Joh,Jesús A. del Alamo,Umesh K. Mishra,L. J. Brillson	25
16	A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors 2008 ·IEEE Electron Device Letters ·Jungwoo Joh,Jesús A. del Alamo,J. L. Jiménez	91
17	Correlation between RF and DC reliability in GaN high electron mobility transistors 2008 ·Jungwoo Joh,Jesús A. del Alamo,(unknown),J. L. Jiménez	15
18	Progress in GaN devices performances and reliability 2008 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·P. Saunier,(unknown),J. L. Jiménez,(unknown),D.C. Dumka,H.Q. Tserng,Ming-Yih Kao,U. Chowdhury,P.C. Chao,K. Chu,(unknown),I. Eliashevich,Shiping Guo,Jesús A. del Alamo,Jungwoo Joh,M. S. Shur	1
19	Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors 2007 ·Jungwoo Joh,(unknown),Tso-Min Chou,Hua-Quen Tserng,J. L. Jiménez	6
20	Progress in GaN Performances and Reliability 2007 ·P. Saunier,(unknown),(unknown),D.C. Dumka,J. L. Jiménez,H.Q. Tserng,(unknown),P.C. Chao,K. Chu,(unknown),I. Eliashevich,Shiping Guo,Jesús A. del Alamo,Jungwoo Joh,M. S. Shur	30

About Jungwoo Joh

Jungwoo Joh is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 40 papers that have together received 2.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (28 papers) and Silicon Carbide Semiconductor Technologies (16 papers). The work is most often cited by research in Condensed Matter Physics (2.1k citations), Electronic, Optical and Magnetic Materials (663 citations) and Electrical and Electronic Engineering (1.8k citations). Jungwoo Joh has collaborated with scholars based in United States and South Korea. Frequent co-authors include Jesús A. del Alamo, J. L. Jiménez, Carl V. Thompson, Tomás Palacios, Ling Xia, Prashanth Makaram, S. Pendharkar, Hua-Quen Tserng, Tso-Min Chou and S. Krishnan. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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