Ming Zhao

2.0k total citations
98 papers, 1.6k citations indexed

About

Ming Zhao is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ming Zhao has authored 98 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 64 papers in Condensed Matter Physics and 23 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ming Zhao's work include GaN-based semiconductor devices and materials (64 papers), Semiconductor materials and devices (47 papers) and Silicon Carbide Semiconductor Technologies (29 papers). Ming Zhao is often cited by papers focused on GaN-based semiconductor devices and materials (64 papers), Semiconductor materials and devices (47 papers) and Silicon Carbide Semiconductor Technologies (29 papers). Ming Zhao collaborates with scholars based in Belgium, China and United Kingdom. Ming Zhao's co-authors include Stefaan Decoutere, G. Groeseneken, Xiangdong Li, Shuzhen You, Karen Geens, Steve Stoffels, M. Van Hove, Benoit Bakeroot, Niels Posthuma and Jaakko Sormunen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Brain Research.

In The Last Decade

Ming Zhao

94 papers receiving 1.5k citations

Peers

Ming Zhao

CMP

EEE

EOMM

AMPO

Yutaka Tokuda Japan

Kwai Hei Li China

Meixin Feng China

Zengcheng Li China

M. Kito Japan

Geok Ing Ng Singapore

Baijun Zhang China

B. Ocker Germany

Virginie Hoel France

Г. Константинидис Greece

Yutaka Tokuda Japan

Ming Zhao

673 ×0.6

CMP

1.2k ×1.0

EEE

384 ×0.8

EOMM

520 ×1.6

AMPO

399 ×1.3

Citations per year, relative to Ming Zhao Ming Zhao (= 1×) peers Yutaka Tokuda

Countries citing papers authored by Ming Zhao

Since Specialization

Citations

This map shows the geographic impact of Ming Zhao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ming Zhao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ming Zhao more than expected).

Fields of papers citing papers by Ming Zhao

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ming Zhao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ming Zhao. The network helps show where Ming Zhao may publish in the future.

Co-authorship network of co-authors of Ming Zhao

This figure shows the co-authorship network connecting the top 25 collaborators of Ming Zhao. A scholar is included among the top collaborators of Ming Zhao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ming Zhao. Ming Zhao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Banerjee, Sourish, Uthayasankaran Peralagu, A. Alian, et al.. (2024). Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n⁺ (In)GaN Source/Drain Layers for Radio Frequency Transistors. physica status solidi (a). 221(21). 1 indexed citations

Yu, Hao, V. Putcha, Uthayasankaran Peralagu, et al.. (2022). Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures. Journal of Applied Physics. 131(3). 6 indexed citations

Yu, Hao, Bertrand Parvais, Ming Zhao, et al.. (2022). Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures. Applied Physics Letters. 120(21). 5 indexed citations

Zhao, Ming, Martin Rack, Dimitri Lederer, et al.. (2022). Time Dependence of RF Losses in GaN-on-Si Substrates. IEEE Microwave and Wireless Components Letters. 32(6). 688–691. 2 indexed citations

Peng, Yan, Bin Li, Xiaohua Chen, et al.. (2022). A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor. IEEE Electron Device Letters. 43(8). 1271–1274. 11 indexed citations

Vohra, Anurag, Karen Geens, Ming Zhao, et al.. (2022). Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application. Applied Physics Letters. 120(26). 13 indexed citations

Minj, Albert, Ming Zhao, Benoit Bakeroot, & Kristof Paredis. (2021). Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells. Applied Physics Letters. 118(3). 2 indexed citations

Yu, Hao, A. Alian, Uthayasankaran Peralagu, et al.. (2021). Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics. IEEE Transactions on Electron Devices. 68(11). 5559–5564. 12 indexed citations

Li, Xiangdong, Benoit Bakeroot, Nooshin Amirifar, et al.. (2021). Reliability of p-GaN Gate HEMTs in Reverse Conduction. IEEE Transactions on Electron Devices. 68(2). 645–652. 17 indexed citations

10.

You, Shuzhen, Xiangdong Li, Karen Geens, et al.. (2021). GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V _T instability effect. Semiconductor Science and Technology. 36(3). 35008–35008. 1 indexed citations

11.

Borga, Matteo, Carlo De Santi, Steve Stoffels, et al.. (2020). Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications. IEEE Transactions on Electron Devices. 67(2). 595–599. 13 indexed citations

12.

Li, Xiangdong, Karen Geens, D. Wellekens, et al.. (2020). Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates. IEEE Transactions on Semiconductor Manufacturing. 33(4). 534–538. 17 indexed citations

13.

Wang, Hongyue, Po-Chun Hsu, Ming Zhao, et al.. (2020). Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration. IEEE Transactions on Electron Devices. 67(11). 4827–4833. 10 indexed citations

14.

Li, Xiangdong, Niels Posthuma, Benoit Bakeroot, et al.. (2020). Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics. IEEE Transactions on Power Electronics. 36(5). 4927–4930. 34 indexed citations

15.

Rodríguez, R., Uthayasankaran Peralagu, A. Alian, et al.. (2020). Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs. IEEE Transactions on Electron Devices. 67(11). 4592–4596. 5 indexed citations

16.

Minj, Albert, Laurence Méchin, Hongwei Liang, et al.. (2020). Characterization of defect states in Mg-doped GaN-on-Si p ⁺ n diodes using deep-level transient Fourier spectroscopy. Semiconductor Science and Technology. 36(2). 24002–24002.

17.

Zhao, Ming, et al.. (2020). The influence of AlN nucleation layer on RF transmission loss of GaN buffer on high resistivity Si (111) substrate. Semiconductor Science and Technology. 35(3). 35029–35029. 23 indexed citations

18.

Uren, Michael J., et al.. (2020). Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors. IEEE Electron Device Letters. 41(12). 1754–1757. 21 indexed citations

19.

Gaubas, E., et al.. (2018). Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si. Semiconductor Science and Technology. 33(7). 75015–75015. 5 indexed citations

20.

Gaubas, E., T. Malinauskas, S. Miasojedovas, et al.. (2017). Study of recombination characteristics in MOCVD grown GaN epi-layers on Si. Semiconductor Science and Technology. 32(12). 125014–125014. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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