Matteo Borga

2.2k total citations
60 papers, 726 citations indexed

About

Matteo Borga is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Matteo Borga has authored 60 papers receiving a total of 726 indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Condensed Matter Physics, 57 papers in Electrical and Electronic Engineering and 18 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Matteo Borga's work include GaN-based semiconductor devices and materials (59 papers), Semiconductor materials and devices (42 papers) and Silicon Carbide Semiconductor Technologies (34 papers). Matteo Borga is often cited by papers focused on GaN-based semiconductor devices and materials (59 papers), Semiconductor materials and devices (42 papers) and Silicon Carbide Semiconductor Technologies (34 papers). Matteo Borga collaborates with scholars based in Belgium, Italy and Germany. Matteo Borga's co-authors include Stefaan Decoutere, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Benoit Bakeroot, Niels Posthuma, Carlo De Santi, Steve Stoffels, Karen Geens and M. Van Hove and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Matteo Borga

58 papers receiving 705 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Matteo Borga Belgium 17 668 603 251 120 74 60 726
Alaleh Tajalli Italy 11 429 0.6× 378 0.6× 186 0.7× 70 0.6× 79 1.1× 17 469
Giorgia Longobardi United Kingdom 12 449 0.7× 436 0.7× 169 0.7× 99 0.8× 109 1.5× 34 546
Isabella Rossetto Italy 19 1.3k 1.9× 1.2k 1.9× 447 1.8× 236 2.0× 183 2.5× 49 1.4k
Stefano Dalcanale United Kingdom 13 535 0.8× 498 0.8× 309 1.2× 78 0.7× 196 2.6× 20 689
Alfonso Patti Italy 10 376 0.6× 464 0.8× 199 0.8× 88 0.7× 106 1.4× 18 569
Yuki Niiyama Japan 13 736 1.1× 632 1.0× 375 1.5× 96 0.8× 153 2.1× 23 802
Marcello Cioni Italy 8 473 0.7× 423 0.7× 151 0.6× 155 1.3× 90 1.2× 27 553
Tsuyoshi Tanaka Japan 5 946 1.4× 811 1.3× 479 1.9× 145 1.2× 172 2.3× 8 1.0k
Francesca Danesin Italy 8 775 1.2× 697 1.2× 241 1.0× 159 1.3× 150 2.0× 11 828
Zhaoke Bian China 11 319 0.5× 321 0.5× 182 0.7× 96 0.8× 51 0.7× 16 400

Countries citing papers authored by Matteo Borga

Since Specialization
Citations

This map shows the geographic impact of Matteo Borga's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Matteo Borga with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Matteo Borga more than expected).

Fields of papers citing papers by Matteo Borga

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Matteo Borga. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Matteo Borga. The network helps show where Matteo Borga may publish in the future.

Co-authorship network of co-authors of Matteo Borga

This figure shows the co-authorship network connecting the top 25 collaborators of Matteo Borga. A scholar is included among the top collaborators of Matteo Borga based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Matteo Borga. Matteo Borga is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Geens, Karen, et al.. (2025). Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS. SHILAP Revista de lepidopterología. 10. 100082–100082. 1 indexed citations
2.
Fiegna, C., Benoit Bakeroot, Matteo Borga, et al.. (2024). Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. Ghent University Academic Bibliography (Ghent University). 1–6. 2 indexed citations
3.
Tallarico, Andrea Natale, Matteo Borga, Benoit Bakeroot, et al.. (2024). P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime. IEEE Electron Device Letters. 45(9). 1630–1633. 3 indexed citations
4.
Borga, Matteo, Niels Posthuma, Anurag Vohra, Benoit Bakeroot, & Stefaan Decoutere. (2024). Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering. physica status solidi (a). 221(21). 4 indexed citations
5.
Borga, Matteo, et al.. (2024). Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping. IEEE Transactions on Electron Devices. 71(10). 5949–5955. 3 indexed citations
6.
Borga, Matteo, Benoit Bakeroot, Niels Posthuma, et al.. (2023). Role of the GaN-on-Si Epi-Stack on ΔR ON Caused by Back-Gating Stress. IEEE Transactions on Electron Devices. 70(10). 5203–5209. 3 indexed citations
7.
Modolo, Nicola, Carlo De Santi, Matteo Borga, et al.. (2022). Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices. IEEE Transactions on Electron Devices. 69(8). 4432–4437. 4 indexed citations
8.
Borga, Matteo, Benoit Bakeroot, Niels Posthuma, et al.. (2022). The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs. IEEE Electron Device Letters. 43(11). 1846–1849. 11 indexed citations
9.
Santi, Carlo De, Shuzhen You, Karen Geens, et al.. (2022). Study and characterization of GaN MOS capacitors: Planar vs trench topographies. Applied Physics Letters. 120(14). 8 indexed citations
10.
Santi, Carlo De, Matteo Buffolo, Matteo Borga, et al.. (2021). Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs. Micromachines. 12(4). 445–445. 14 indexed citations
11.
Fiegna, C., Niels Posthuma, Matteo Borga, et al.. (2021). High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs. IEEE Transactions on Electron Devices. 68(11). 5701–5706. 26 indexed citations
12.
Borga, Matteo, Maria Ruzzarin, Carlo De Santi, et al.. (2020). Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs. Applied Physics Express. 13(2). 24004–24004. 22 indexed citations
13.
Santi, Carlo De, Matteo Borga, Shuzhen You, et al.. (2020). Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability. Materials. 13(21). 4740–4740. 17 indexed citations
14.
Borga, Matteo, Carlo De Santi, Steve Stoffels, et al.. (2020). Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications. IEEE Transactions on Electron Devices. 67(2). 595–599. 13 indexed citations
15.
Tajalli, Alaleh, Matteo Borga, Matteo Meneghini, et al.. (2020). Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment. Micromachines. 11(1). 101–101. 3 indexed citations
16.
Posthuma, Niels, et al.. (2020). Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs. IEEE Transactions on Device and Materials Reliability. 21(1). 57–63. 7 indexed citations
17.
Borga, Matteo, Carlo De Santi, Steve Stoffels, et al.. (2020). Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices. Applied Physics Express. 13(2). 24006–24006. 8 indexed citations
18.
Meneghini, Matteo, Carlo De Santi, Matteo Borga, et al.. (2018). Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs. IEEE Transactions on Electron Devices. 66(1). 337–342. 23 indexed citations
19.
Borga, Matteo, Matteo Meneghini, Steve Stoffels, et al.. (2018). Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs. IEEE Transactions on Electron Devices. 65(7). 2765–2770. 45 indexed citations
20.
Borga, Matteo, Matteo Meneghini, Isabella Rossetto, et al.. (2017). Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs. IEEE Transactions on Electron Devices. 64(9). 3616–3621. 43 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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