S. Bychikhin

917 citations

60 papers · 760 indexed · h-index 16

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Electrostatic Discharge in Electronics
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Electrical and Electronic Engineering 55
- Electrostatic Discharge in Electronics 39
- Semiconductor materials and devices 31
- Integrated Circuits and Semiconductor Failure Analysis 29
- Advancements in Semiconductor Devices and Circuit Design 21
- Silicon Carbide Semiconductor Technologies 11
- Thin-Film Transistor Technologies 7
Condensed Matter Physics 10
- GaN-based semiconductor devices and materials 10

Co-authors: D. Pogány E. Gornik J. Kuzmı́k M. Stecher G. Groos Martin Litzenberger Kai Esmark Gaudenzio Meneghesso
Journals: Microelectronics Reliability (6 papers)Journal of Applied Physics (5 papers)IEEE Transactions on Electron Devices (5 papers)IEEE Transactions on Device and Materials Reliability (5 papers)IEEE Electron Device Letters (2 papers)
Partner nations: Austria Germany France

In The Last Decade

S. Bychikhin

58 papers receiving 729 citations

Peers

Countries citing papers authored by S. Bychikhin

Since Specialization

Citations

This map shows the geographic impact of S. Bychikhin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Bychikhin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Bychikhin more than expected).

Fields of papers citing papers by S. Bychikhin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Bychikhin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Bychikhin. The network helps show where S. Bychikhin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Bychikhin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Bychikhin Line = papers co-authored together S. Bychikhin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Thermal analysis of submicron nanocrystalline diamond films Diamond and Related Materials ·Stefano Rossi, M. Alomari, Carlos Gilmer Castillo Correa, S. Bychikhin, D. Pogány, Jonathan Weaver, E. Kohn	2013	16
2	HBM ESD Robustness of GaN-on-Si Schottky Diodes IEEE Transactions on Device and Materials Reliability ·Jae Hack Lee, Alessio Griffoni, Михаил Ганджунцев, D. Linten, S. Thijs, Mirko Scholz, Denis Marcon, Yao Zhang, アルフレード V ラグマイ, A. Concannon, В.А. Ващенко, P. Hopper, S. Bychikhin, D. Pogány, M. Van Hove, Stefaan Decoutere, G. Groeseneken	2012	4
3	Effect of Elevated Ambient Temperature on Thermal Breakdown Behavior in BCD ESD Protection Devices Subjected to Long Electrical Overstress Pulses IEEE Transactions on Device and Materials Reliability ·Estela Argentina Perez León, S. Bychikhin, Isabelle Bell, N. Jensen, M. Stecher, E. Gornik, D. Pogány	2012	1
4	Accurate Temperature Measurements of DMOS Power Transistors up to Thermal Runaway by Small Embedded Sensors IEEE Transactions on Semiconductor Manufacturing ·Martin Pfost, A. Shurna, Hong JH, M. Stecher, S. Bychikhin, D. Pogány, E. Gornik	2012	23
5	ESD robust DeMOS devices in advanced CMOS technologies Electrical Overstress/Electrostatic Discharge Symposium ·Mayank Shrivastava, Christian Russ, Harald Goßner, S. Bychikhin, D. Pogány, E. Gornik	2011	18
6	Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond Journal of Applied Physics ·J. Kuzmı́k, S. Bychikhin, D. Pogány, Misara El Kady, O. Lancry, Christophe Gaquière, Sabato Luciano, G. Deligeorgis, A. Georgakilas	2011	34
7	Electro-thermal characterization and simulation of integrated multi trenched XtreMOS power devices R. H. Orton, Madhava, Nicholas Milano, S. Bychikhin, Georg Haberfehlner, D. Pogány, B. Desoete, Renaud Gillon, 乐钟, M. Tack	2010	5
8	Small embedded sensors for accurate temperature measurements in DMOS power transistors Martin Pfost, A. Shurna, Ferdian Muhammad, Matthias Stecher, S. Bychikhin, D. Pogány, E. Gornik	2010	20
9	New methodology on electro-thermal characterization and modeling of large power drivers using lateral PNP BJTs R. H. Orton, O.V. Kolychev, Nicholas Milano, Thomas Erthle, S. Bychikhin, D. Pogány, 乐钟, Adrijan Barić, M. Tack	2010	6
10	Filament study of STI type drain extended NMOS device using transient interferometric mapping Mayank Shrivastava, S. Bychikhin, D. Pogány, Jens Schneider, Maryam Shojaei Baghini, Harald Goßner, E. Gornik, V. Ramgopal Rao	2009	7
11	Transient behavior of SCRS during ESD pulses Kai Esmark, Harald Goßner, S. Bychikhin, D. Pogány, Christian Russ, Higor Jonathan de Oliveira Silva, E. Gornik	2008	32
12	Analysis of the triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices Research Padua Archive (University of Padua) ·Muhammad Munib Ur Rehman, S. Bychikhin, D. H. Miller, D. Pogány, E. Gornik, 高岡秀子, T. A. Kolodkin, Takehiko Inada, A. Andreini, Augusto Tazzoli, Gaudenzio Meneghesso	2006	8
13	Current conduction and saturation mechanism in AlGaN∕GaN ungated structures Journal of Applied Physics ·J. Kuzmı́k, S. Bychikhin, D. Pogány, Christophe Gaquière, E. Morvan	2006	22
14	Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on Silicon IEEE Transactions on Electron Devices ·J. Kuzmı́k, S. Bychikhin, Martin Neuburger, A. Dadgar, A. Krost, E. Kohn, D. Pogány	2005	73
15	Effects of hot spot hopping and drain ballasting in integrated vertical DMOS devices under TLP stress P. Moens, S. Bychikhin, Orit Rotem, D. Pogány, F. Maiz	2004	7
16	Single-shot nanosecond thermal imaging of semiconductor devices using absorption measurements IEEE Transactions on Device and Materials Reliability ·D. Pogány, D. H. Miller, S. Bychikhin, Sivagowry shathesh, Martin Litzenberger, С. В. Наумов, G. Groos, M. Stecher, E. Gornik	2003	3
17	Extraction of spatio-temporal distribution of power dissipation in semiconductor devices using nanosecond interferometric mapping technique Applied Physics Letters ·D. Pogány, S. Bychikhin, Martin Litzenberger, E. Gornik, G. Groos, M. Stecher	2002	20
18	A Method for Extraction of Power Dissipating Sources from Interferometric Thermal Mapping Measurements D. Pogány, Martin Litzenberger, S. Bychikhin, E. Gornik, G. Groos, M. Stecher	2002	2
19	Laser interferometric mapping of smart power ESD protection devices with different blocking capabilities S. Bychikhin, Martin Litzenberger, Lorraine Souza de Oliveira, D. Pogány, Sivagowry shathesh, E. Gornik, G. Groos, M. Stecher	2001	3
20	Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures Microelectronics Reliability ·S. Bychikhin, Martin Litzenberger, Reinhard Pichler, D. Pogány, E. Gornik, G. Groos, M. Stecher	2001	2

About S. Bychikhin

S. Bychikhin is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, General Materials Science, Hardware and Architecture and Atomic and Molecular Physics, and Optics, having authored 60 papers that have together received 760 indexed citations. Recurring topics across this work include Electrostatic Discharge in Electronics (39 papers), Semiconductor materials and devices (31 papers), Integrated Circuits and Semiconductor Failure Analysis (29 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers), Silicon Carbide Semiconductor Technologies (11 papers), GaN-based semiconductor devices and materials (10 papers), Thin-Film Transistor Technologies (7 papers) and Thermal properties of materials (5 papers). The work is most often cited by research in Condensed Matter Physics (258 citations), Electrical and Electronic Engineering (650 citations), Materials Chemistry (166 citations), Atomic and Molecular Physics, and Optics (89 citations) and Electronic, Optical and Magnetic Materials (36 citations). S. Bychikhin has collaborated with scholars based in Austria, Germany and France. Frequent co-authors include D. Pogány, E. Gornik, J. Kuzmı́k, M. Stecher, G. Groos, Martin Litzenberger, Kai Esmark, Gaudenzio Meneghesso, E. Morvan and L.K.J. Vandamme. Their work appears in journals such as Microelectronics Reliability, Journal of Applied Physics, IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability and IEEE Electron Device Letters.

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