Michael J. Uren

12.4k citations

291 papers · 9.1k indexed · 2 hit papers · h-index 48

Impact in

Condensed Matter Physics top 0.1%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 0.2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Condensed Matter Physics 173
- GaN-based semiconductor devices and materials 171
Electrical and Electronic Engineering 256
- Semiconductor materials and devices 173
- Silicon Carbide Semiconductor Technologies 98
- Advancements in Semiconductor Devices and Circuit Design 84
- Radio Frequency Integrated Circuit Design 27

Co-authors: M. J. Kirton Martin Kuball R.S. Balmer K.P. Hilton T. Martin Trevor Martin James W. Pomeroy J. D. Benjamin
Journals: IEEE Transactions on Electron Devices (35 papers)Applied Physics Letters (33 papers)IEEE Electron Device Letters (22 papers)Journal of Applied Physics (13 papers)Semiconductor Science and Technology (13 papers)
Partner nations: United Kingdom United States Belgium

In The Last Decade

Michael J. Uren

282 papers receiving 8.7k citations

Hit Papers

align trajectories log scale

Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise 1989 · 1.0k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1989 Advances In Physics
1985 Journal of Crystal Growth

Peers

Countries citing papers authored by Michael J. Uren

Since Specialization

Citations

This map shows the geographic impact of Michael J. Uren's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michael J. Uren with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michael J. Uren more than expected).

Fields of papers citing papers by Michael J. Uren

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michael J. Uren. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michael J. Uren. The network helps show where Michael J. Uren may publish in the future.

Co-authors

The 25 scholars most cited alongside Michael J. Uren, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Michael J. Uren Line = papers co-authored together Michael J. Uren links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications Nature Electronics ·Akhil S. Kumar, Stefano Dalcanale, Michael J. Uren, James W. Pomeroy, Matthew D. Smith, Justin Parke, Robert S. Howell, Martin Kuball	2025	2
2	AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach Semiconductor Science and Technology ·Akhil S. Kumar, Michael J. Uren, Justin Parke, H.G. Henry, Robert S. Howell, Martin Kuball	2023	4
3	Modelling of impedance dispersion in lateral β-Ga₂O₃ MOSFETs due to parallel conductive Si-accumulation layer Applied Physics Express ·Zequan Chen, Abhishek Mishra, Aditya K. Bhat, Matthew D. Smith, Michael J. Uren, Sandeep Kumar, Masataka Higashiwaki, Martin Kuball	2023	2
4	Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs Explore Bristol Research ·Akhil S. Kumar, Michael J. Uren, Matthew D. Smith, Martin Kuball, Justin Parke, H.G. Henry, Robert S. Howell	2023	2
5	Breakdown Mechanisms in β-Ga₂O₃ Trench-MOS Schottky-Barrier Diodes IEEE Transactions on Electron Devices ·Taylor Moule, Stefano Dalcanale, Akhil S. Kumar, Michael J. Uren, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Martin Kuball	2021	16
6	Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs Japanese Journal of Applied Physics ·Michael J. Uren, Martin Kuball	2021	34
7	Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors IEEE Electron Device Letters ·Filip Wach, Michael J. Uren, Benoit Bakeroot, Ming Zhao, Stefaan Decoutere, Martin Kuball	2020	21
8	Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique Semiconductor Science and Technology ·Jiejie Zhu, Yingcong Zhang, Xiaohua Ma, Siyu Liu, Siqi Jing, Qing Zhu, Minhan Mi, Bin Hou, Ling Yang, Michael J. Uren, Martin Kuball, Yue Hao	2020	3
9	Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology IEEE Transactions on Electron Devices ·Hareesh Chandrasekar, Michael J. Uren, Michael A. Casbon, H. Hirshy, Abdalla Eblabla, K. Elgaid, James W. Pomeroy, P.J. Tasker, Martin Kuball	2019	24
10	The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·A. Stockman, Alaleh Tajalli, Matteo Meneghini, Michael J. Uren, S. Mouhoubi, Simone Gerardin, Marta Bagatin, A. Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, P. Moens, Benoit Bakeroot	2018	19
11	On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices Research Padua Archive (University of Padua) ·P. Moens, P. Vanmeerbeek, Abhishek Banerjee, J. Guo, C. Liu, P. Coppens, Amar K. Salih, M. Tack, Markus Caesar, Michael J. Uren, Martin Kuball, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni	2015	93
12	RF waveform investigation of VSWR sweeps on GaN HFETs ORCA Online Research @Cardiff (Cardiff University) ·William McGenn, J. Benedikt, P.J. Tasker, Jeff Powell, Michael J. Uren	2011	1
13	Impact of surface charge on the I-V characteristics of an AlGaN/GaN HEMT ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) ·Daniel Balaz, K. Kálna, Martin Kuball, D.G. Hayes, Michael J. Uren, A. Asinov	2009	1
14	Robust X-band LNAs in AlGaN/GaN technology Data Archiving and Networked Services (DANS) ·J.P.B. Janssen, M. van Heijningen, G.C. Visser, M. Rodenburg, H.K. Johnson, Michael J. Uren, E. Morvan, F.E. van Vliet	2009	16
15	15th Int. Symp. on the Physical and Failure Analysis of Integrated Circuits, Singapore July 2008 Andrei Sarua, James W. Pomeroy, Martin Kuball, Aaron Falk, Grant C. Albright, Michael J. Uren, Tifenn Martin	2008	2
16	A ΣΔ modulator with extended supply voltages in 0.8µm SOI CMOS for direct ground referred instrumentation interfacing European Solid-State Circuits Conference ·W. Redman-White, C.A. Easson, J. D. Benson, Robert L. Rabe, Michael J. Uren	1999	1
17	A multi–bit ΣΔ modulator in floating body silicon–on–sapphire CMOS technology for extreme radiation environments ePrints Soton (University of Southampton) ·C.F. Edwards, W. Redman-White, M. Bracey, B.M. Tenbroek, M.S.L. Lee, Michael J. Uren	1998	1
18	Drain current mismatch in SOI CMOS current mirrors and D/A converters due to localised internal and coupled heating European Solid-State Circuits Conference ·B.M. Tenbroek, Myoung-Goo Lee, W. Redman-White, C.F. Edwards, Michael J. Uren, R.J.T. Bunyan	1997	7
19	Identification of thermal and electrical time constants in SOIMOSFETS from small signal measurements ePrints Soton (University of Southampton) ·B.M. Tenbroek, W. Redman-White, Michael J. Uren, M S L Lee, Michael Ward	1993	10
20	THE EFFECT OF GGBS ON THE DURABILITY OF CONCRETE D. D. Higgins, Michael J. Uren	1991	10

About Michael J. Uren

Michael J. Uren is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 291 papers that have together received 9.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (173 papers), GaN-based semiconductor devices and materials (171 papers), Silicon Carbide Semiconductor Technologies (98 papers), Advancements in Semiconductor Devices and Circuit Design (84 papers), Ga2O3 and related materials (42 papers), Semiconductor Quantum Structures and Devices (32 papers), ZnO doping and properties (30 papers) and Radio Frequency Integrated Circuit Design (27 papers). The work is most often cited by research in Condensed Matter Physics (4.9k citations), Electrical and Electronic Engineering (7.3k citations), Electronic, Optical and Magnetic Materials (1.6k citations), Atomic and Molecular Physics, and Optics (2.2k citations) and Materials Chemistry (2.6k citations). Michael J. Uren has collaborated with scholars based in United Kingdom, United States and Belgium. Frequent co-authors include M. J. Kirton, Martin Kuball, R.S. Balmer, K.P. Hilton, T. Martin, Trevor Martin, James W. Pomeroy, J. D. Benjamin, N. G. Chew and M.I.J. Beale. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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