Xiangdong Li

1.2k citations

70 papers · 942 indexed · h-index 18

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 52
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 20
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 29
- Silicon Carbide Semiconductor Technologies 25
- Advancements in Semiconductor Devices and Circuit Design 6
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 8
Nuclear and High Energy Physics
- Quantum Chromodynamics and Particle Interactions 6
Materials Chemistry
- ZnO doping and properties 6

Co-authors: Stefaan Decoutere Ming Zhao G. Groeseneken Shuzhen You Karen Geens M. Van Hove Jincheng Zhang Jaakko Sormunen
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Physical review. B, Condensed matter (1 paper)Applied Physics Letters (3 papers)IEEE Transactions on Power Electronics (2 papers)
Partner nations: China Belgium United States

In The Last Decade

Xiangdong Li

63 papers receiving 909 citations

Peers

Countries citing papers authored by Xiangdong Li

Since Specialization

Citations

This map shows the geographic impact of Xiangdong Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xiangdong Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xiangdong Li more than expected).

Fields of papers citing papers by Xiangdong Li

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xiangdong Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xiangdong Li. The network helps show where Xiangdong Li may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Xiangdong Li, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Xiangdong Li Line = papers co-authored together Xiangdong Li links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion Micromachines ·Lili Zhai,Xiangdong Li,Jian Ji,Yu Lu,Liang Chen,Yaoming Chen,H. R. Xia,Zhanfei Han,Junbo Wang,Xi Jiang,Song Yuan,Tao Zhang,Yue Hao,Jincheng Zhang	2025	0
2	A 614 MW/cm2 AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity Applied Physics Letters ·Heyuan Chen,Tao Zhang,Huake Su,Xiangdong Li,Shengrui Xu,Yachao Zhang,Ruowei Liu,Lei Xie,Yue Hao,Jincheng Zhang	2025	1
3	Balancing Threshold Voltage and On-Resistance of p-GaN Gate HEMTs via Mg Doping Engineering IEEE Transactions on Electron Devices ·Zhanfei Han,Xiangdong Li,Jian Ji,Tao Zhang,Xi Jiang,Song Yuan,Yaoming Chen,H. R. Xia,Cheng Li,Long Chen,Yue Hao,Jincheng Zhang	2025	0
4	MIS p-GaN Tunneling Gate HEMTs on 6-In Si: A Novel Approach to Enhance Gate Reliability IEEE Transactions on Electron Devices ·Zhanfei Han,Xiangdong Li,Jian Ji,Qiushuang Li,Yuanhang Zhang,Lili Zhai,Hongyue Wang,Jingjing Chang,Shuzhen You,Zhihong Liu,Yue Hao,Jincheng Zhang	2025	2
5	Understanding the Role of Dislocation Defects of GaN HEMT under Short-Circuit Stress Through Transient Thermal Characterization IEEE Transactions on Power Electronics ·Xi Jiang,Yue Wu,Song Yuan,Xiangdong Li,Zhaoheng Yan,Jing Chen,Tao Jiang,Shijie Zhang,Xiaowu Gong,Hao Niu,Jun Wang	2025	1
6	Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate Micromachines ·Zhanfei Han,Xiangdong Li,Hongyue Wang,Yuebo Liu,Weitao Yang,Zesheng Lv,Meng Wang,Shuzhen You,Jincheng Zhang,Yue Hao	2024	4
7	Odontogenic and anti-inflammatory effects of magnesium-doped bioactive glass in vital pulp therapy Biomedical Materials ·Yewen Zhong,Cong Liu,Xin Yan,Xiangdong Li,Xiaofeng Chen,Sui Mai	2024	4
8	Achieving ≥ 1200-V High-Performance GaN HEMTs on Sapphire With Carbon-Doped Buffer IEEE Transactions on Electron Devices ·Zhibo Cheng,Xiangdong Li,Long Chen,Lezhi Wang,Zilan Li,Xi Tang,Xiaoyu Liu,Tao Zhang,Xi Jiang,Song Yuan,Shuzhen You,Yue Hao,Jincheng Zhang	2024	1
9	Comprehensive study of Schottky-gated p-channel GaN field-effect transistors Applied Physics Letters ·Jiahao Chen,Tao Zhang,Huake Su,Shengrui Xu,Zeyang Ren,Yu Du,Xiangdong Li,Yue Hao,Jincheng Zhang	2024	1
10	Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications IEEE Transactions on Electron Devices ·Xiangdong Li,Jie Zhang,Jian Ji,Zhibo Cheng,Junbo Wang,Long Chen,Lezhi Wang,Shuzhen You,Lili Zhai,Qiushuang Li,Yuanhang Zhang,Tong Liu,Zilan Li,Yue Hao,Jincheng Zhang	2024	11
11	High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 nm Ultra-Thin Buffer and Al₂O₃/SiO₂ Passivation Junbo Wang,Xiangdong Li,Long Chen,Ye Yuan,Tongxin Lu,Shuzhen You,Lezhi Wang,Zilan Li,Jincheng Zhang,Xinqiang Wang,Yue Hao	2024	0
12	1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer IEEE Electron Device Letters ·Xiangdong Li,Junbo Wang,Jincheng Zhang,Zhanfei Han,Shuzhen You,Long Chen,Lezhi Wang,Zilan Li,Weitao Yang,Jingjing Chang,Zhihong Liu,Yue Hao	2023	23
13	Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization Micromachines ·Xiangdong Li,Meng Wang,Jincheng Zhang,Rui Gao,Hongyue Wang,Weitao Yang,Jiahui Yuan,Shuzhen You,Jingjing Chang,Zhihong Liu,Yue Hao	2023	6
14	On the role of hubs in the coherence of unicyclic and bicyclic networks International Journal of Modern Physics C ·Ling Zhou,Xiangdong Li,Weigang Sun	2023	2
15	Reliability of p-GaN Gate HEMTs in Reverse Conduction IEEE Transactions on Electron Devices ·Deepthi Cingu,Xiangdong Li,Benoit Bakeroot,Nooshin Amirifar,Karen Geens,Kristof J. P. Jacobs,Ming Zhao,Shuzhen You,G. Groeseneken,Stefaan Decoutere	2021	17
16	GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V _T instability effect Semiconductor Science and Technology ·Shuzhen You,Xiangdong Li,Karen Geens,Niels Posthuma,Ming Zhao,Hu Liang,G. Groeseneken,Stefaan Decoutere	2021	1
17	Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications IEEE Transactions on Electron Devices ·Matteo Borga,Carlo De Santi,Steve Stoffels,Benoit Bakeroot,Xiangdong Li,Ming Zhao,M. Van Hove,Stefaan Decoutere,Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanoni	2020	13
18	Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates IEEE Transactions on Semiconductor Manufacturing ·Xiangdong Li,Karen Geens,D. Wellekens,Ming Zhao,Alessandro Magnani,Nooshin Amirifar,Benoit Bakeroot,Shuzhen You,Dirk Fahle,H. Hahn,M. Heuken,Vlad Odnoblyudov,Özgür Aktaş,C. Basceri,Denis Marcon,G. Groeseneken,Stefaan Decoutere	2020	17
19	Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics IEEE Transactions on Power Electronics ·Xiangdong Li,Niels Posthuma,Benoit Bakeroot,Hu Liang,Shuzhen You,Zhicheng Wu,Ming Zhao,G. Groeseneken,Stefaan Decoutere	2020	34
20	Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs IEEE Transactions on Electron Devices ·Matteo Borga,Matteo Meneghini,Steve Stoffels,Xiangdong Li,Niels Posthuma,M. Van Hove,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni	2018	45

About Xiangdong Li

Xiangdong Li is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and General Engineering, having authored 70 papers that have together received 942 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (52 papers), Semiconductor materials and devices (29 papers), Silicon Carbide Semiconductor Technologies (25 papers), Ga2O3 and related materials (20 papers), Semiconductor Quantum Structures and Devices (8 papers), ZnO doping and properties (6 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Quantum Chromodynamics and Particle Interactions (6 papers). The work is most often cited by research in Condensed Matter Physics (714 citations), Electronic, Optical and Magnetic Materials (285 citations) and Electrical and Electronic Engineering (672 citations). Xiangdong Li has collaborated with scholars based in China, Belgium and United States. Frequent co-authors include Stefaan Decoutere, Ming Zhao, G. Groeseneken, Shuzhen You, Karen Geens, M. Van Hove, Jincheng Zhang, Jaakko Sormunen, Benoit Bakeroot and Niels Posthuma. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and IEEE Transactions on Power Electronics.

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