Karen Geens

1.7k citations

61 papers · 1.4k indexed · h-index 18

Condensed Matter Physics top 1%
Electrical and Electronic Engineering top 5%
Electronic, Optical and Magnetic Materials top 5%
Atomic and Molecular Physics, and Optics top 10%
Materials Chemistry

Co-authors: Stefaan Decoutere M. Van Hove Steve Stoffels D. Wellekens Ming Zhao Xuanwu Kang Shuzhen You Xiangdong Li
Topics: GaN-based semiconductor devices and materials (59 papers)Semiconductor materials and devices (42 papers)Silicon Carbide Semiconductor Technologies (32 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: SHILAP Revista de lepidopterologíaApplied Physics Letters Journal of Applied Physics
Partner nations: Belgium Italy Germany

In The Last Decade

Karen Geens

58 papers receiving 1.4k citations

Peers

Countries citing papers authored by Karen Geens

Since Specialization

Citations

This map shows the geographic impact of Karen Geens's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Karen Geens with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Karen Geens more than expected).

Fields of papers citing papers by Karen Geens

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Karen Geens. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Karen Geens. The network helps show where Karen Geens may publish in the future.

Co-authorship network of co-authors of Karen Geens

This figure shows the co-authorship network connecting the top 25 collaborators of Karen Geens. A scholar is included among the top collaborators of Karen Geens based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Karen Geens. Karen Geens is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS 2025 ·SHILAP Revista de lepidopterología ·(unknown),(unknown),(unknown),Karen Geens,Matteo Borga,Frank Altmann	1
2	Low-stress MOCVD-grown 15 μm GaN layers on 200 mm engineered substrates with minimal wafer bow 2025 ·Applied Physics Letters ·Kwang Jae Lee,(unknown),Sourish Banerjee,Thomas Nuytten,(unknown),H. Hahn,(unknown),(unknown),Karen Geens,Stefaan Decoutere,R. Langer,Anurag Vohra	0
3	An Introduction to Wire-Bondless Discrete GaN Power Packages With Top-Side Cu Sinterconnects® 2024 ·(unknown),Guoqi Zhang,(unknown),(unknown),(unknown),Karen Geens,(unknown),Ali Roshanghias	2
4	Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing 2023 ·Scientific Reports ·(unknown),Matteo Borga,Karen Geens,(unknown),(unknown),Sourish Banerjee,Anurag Vohra,(unknown),Albert Minj,H. Hahn,(unknown),Dirk Fahle,Benoit Bakeroot,Stefaan Decoutere	7
5	Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques 2023 ·Physical Review Applied ·Albert Minj,Karen Geens,Hu Liang,(unknown),(unknown),Benoit Bakeroot,Kristof Paredis,Ming Zhao,Thomas Hantschel,Stefaan Decoutere	0
6	Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application 2022 ·Applied Physics Letters ·Anurag Vohra,Karen Geens,Ming Zhao,(unknown),H. Hahn,Dirk Fahle,Benoit Bakeroot,D. Wellekens,(unknown),R. Langer,Stefaan Decoutere	13
7	Study and characterization of GaN MOS capacitors: Planar vs trench topographies 2022 ·Applied Physics Letters ·(unknown),Carlo De Santi,Shuzhen You,Karen Geens,Matteo Borga,Stefaan Decoutere,Benoit Bakeroot,(unknown),Frank Altmann,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	8
8	Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs 2021 ·Micromachines ·(unknown),Carlo De Santi,Matteo Buffolo,Matteo Borga,Shuzhen You,Karen Geens,Benoit Bakeroot,Stefaan Decoutere,Andrea Gerosa,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	14
9	Reliability of p-GaN Gate HEMTs in Reverse Conduction 2021 ·IEEE Transactions on Electron Devices ·(unknown),Xiangdong Li,Benoit Bakeroot,Nooshin Amirifar,Karen Geens,(unknown),Ming Zhao,Shuzhen You,G. Groeseneken,Stefaan Decoutere	17
10	GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V _T instability effect 2021 ·Semiconductor Science and Technology ·Shuzhen You,Xiangdong Li,Karen Geens,Niels Posthuma,Ming Zhao,Hu Liang,G. Groeseneken,Stefaan Decoutere	1
11	Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization 2021 ·Materials ·(unknown),Carlo De Santi,Matteo Borga,Karen Geens,Shuzhen You,Benoit Bakeroot,Stefaan Decoutere,(unknown),(unknown),Frank Altmann,Matteo Buffolo,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	28
12	200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs 2021 ·2021 IEEE International Electron Devices Meeting (IEDM) ·(unknown),(unknown),Brice De Jaeger,Karen Geens,(unknown),(unknown),Matteo Borga,Anurag Vohra,Ming Zhao,Benoit Bakeroot,D. Wellekens,Alessandro Magnani,(unknown),(unknown),R. Langer,Stefaan Decoutere	17
13	Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 2020 ·Applied Physics Express ·(unknown),Matteo Borga,Maria Ruzzarin,Carlo De Santi,Steve Stoffels,Shuzhen You,Karen Geens,Hu Liang,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	22
14	Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability 2020 ·Materials ·(unknown),Carlo De Santi,Matteo Borga,Shuzhen You,Karen Geens,Benoit Bakeroot,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	17
15	Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates 2020 ·IEEE Transactions on Semiconductor Manufacturing ·Xiangdong Li,Karen Geens,D. Wellekens,Ming Zhao,Alessandro Magnani,Nooshin Amirifar,Benoit Bakeroot,Shuzhen You,Dirk Fahle,H. Hahn,M. Heuken,(unknown),Özgür Aktaş,C. Basceri,Denis Marcon,G. Groeseneken,Stefaan Decoutere	17
16	Characterization of defect states in Mg-doped GaN-on-Si p ⁺ n diodes using deep-level transient Fourier spectroscopy 2020 ·Semiconductor Science and Technology ·(unknown),Albert Minj,Laurence Méchin,Hongwei Liang,Karen Geens,Ming Zhao,Eddy Simoen,Bruno Guillet	0
17	Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices 2020 ·Applied Physics Express ·Matteo Borga,(unknown),Carlo De Santi,Steve Stoffels,Karen Geens,Shuzhen You,Benoit Bakeroot,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	8
18	Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics 2013 ·IEEE Transactions on Electron Devices ·M. Van Hove,Xuanwu Kang,Steve Stoffels,D. Wellekens,N. Ronchi,R. Venegas,Karen Geens,Stefaan Decoutere	59
19	(Invited) GaN-on-Si For High-Voltage Applications 2011 ·ECS Transactions ·Domenica Visalli,M. Van Hove,Puneet Srivastava,Denis Marcon,Karen Geens,Xuanwu Kang,(unknown),(unknown),Maarten Leys,Kai Cheng,(unknown),Stefaan Decoutere,Gustaaf Borghs	5
20	Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si<inf>3</inf>N<inf>4</inf> 2009 ·Joff Derluyn,M. Van Hove,Domenica Visalli,Anne Lorenz,Denis Marcon,Puneet Srivastava,Karen Geens,(unknown),(unknown),Xuanwu Kang,J. Das,Farid Medjdoub,Kai Cheng,Stefan Degroote,Maarten Leys,G. Borghs,Marianne Germain	29

About Karen Geens

Karen Geens is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 61 papers that have together received 1.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (59 papers), Semiconductor materials and devices (42 papers) and Silicon Carbide Semiconductor Technologies (32 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electronic, Optical and Magnetic Materials (565 citations) and Electrical and Electronic Engineering (1.2k citations). Karen Geens has collaborated with scholars based in Belgium, Italy and Germany. Frequent co-authors include Stefaan Decoutere, M. Van Hove, Steve Stoffels, D. Wellekens, Ming Zhao, Xuanwu Kang, Shuzhen You, Xiangdong Li, G. Groeseneken and Brice De Jaeger. Their work appears in journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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