Karen Geens

1.7k total citations
61 papers, 1.4k citations indexed

About

Karen Geens is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Karen Geens has authored 61 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Condensed Matter Physics, 56 papers in Electrical and Electronic Engineering and 24 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Karen Geens's work include GaN-based semiconductor devices and materials (59 papers), Semiconductor materials and devices (42 papers) and Silicon Carbide Semiconductor Technologies (32 papers). Karen Geens is often cited by papers focused on GaN-based semiconductor devices and materials (59 papers), Semiconductor materials and devices (42 papers) and Silicon Carbide Semiconductor Technologies (32 papers). Karen Geens collaborates with scholars based in Belgium, Italy and Germany. Karen Geens's co-authors include Stefaan Decoutere, M. Van Hove, Steve Stoffels, D. Wellekens, Ming Zhao, Xuanwu Kang, Shuzhen You, Xiangdong Li, G. Groeseneken and Brice De Jaeger and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Karen Geens

58 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Karen Geens Belgium 18 1.3k 1.2k 565 207 180 61 1.4k
Masahiko Kuraguchi Japan 14 1.3k 1.0× 1.1k 0.9× 610 1.1× 255 1.2× 268 1.5× 30 1.4k
Yoshiharu Takada Japan 14 1.3k 1.0× 1.1k 0.9× 599 1.1× 265 1.3× 266 1.5× 32 1.4k
Masahito Kanamura Japan 17 1.0k 0.8× 776 0.7× 490 0.9× 180 0.9× 364 2.0× 44 1.1k
Matthew Guidry United States 20 1.1k 0.8× 831 0.7× 474 0.8× 341 1.6× 256 1.4× 57 1.2k
Masakazu Kanechika Japan 16 781 0.6× 766 0.6× 352 0.6× 149 0.7× 175 1.0× 39 948
Brian Romanczyk United States 20 1.1k 0.9× 894 0.8× 482 0.9× 373 1.8× 282 1.6× 58 1.3k
Hiroshi Kambayashi Japan 15 920 0.7× 797 0.7× 500 0.9× 109 0.5× 190 1.1× 34 1.0k
Minhan Mi China 19 936 0.7× 745 0.6× 430 0.8× 225 1.1× 181 1.0× 91 991
Daniel Piedra United States 20 1.5k 1.1× 1.3k 1.1× 784 1.4× 288 1.4× 290 1.6× 35 1.7k
Hisayoshi Matsuo Japan 11 1.2k 0.9× 982 0.8× 581 1.0× 179 0.9× 227 1.3× 12 1.3k

Countries citing papers authored by Karen Geens

Since Specialization
Citations

This map shows the geographic impact of Karen Geens's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Karen Geens with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Karen Geens more than expected).

Fields of papers citing papers by Karen Geens

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Karen Geens. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Karen Geens. The network helps show where Karen Geens may publish in the future.

Co-authorship network of co-authors of Karen Geens

This figure shows the co-authorship network connecting the top 25 collaborators of Karen Geens. A scholar is included among the top collaborators of Karen Geens based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Karen Geens. Karen Geens is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Geens, Karen, et al.. (2025). Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS. SHILAP Revista de lepidopterología. 10. 100082–100082. 1 indexed citations
2.
Lee, Kwang Jae, Sourish Banerjee, Thomas Nuytten, et al.. (2025). Low-stress MOCVD-grown 15 μm GaN layers on 200 mm engineered substrates with minimal wafer bow. Applied Physics Letters. 127(24).
3.
4.
Cavaliere, Anna Franca, Carlo De Santi, Matteo Borga, et al.. (2023). High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. Ghent University Academic Bibliography (Ghent University). 1–6. 6 indexed citations
5.
Vohra, Anurag, Karen Geens, Ming Zhao, et al.. (2022). Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application. Applied Physics Letters. 120(26). 13 indexed citations
6.
Santi, Carlo De, Shuzhen You, Karen Geens, et al.. (2022). Study and characterization of GaN MOS capacitors: Planar vs trench topographies. Applied Physics Letters. 120(14). 8 indexed citations
7.
Santi, Carlo De, Matteo Buffolo, Matteo Borga, et al.. (2021). Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs. Micromachines. 12(4). 445–445. 14 indexed citations
8.
Santi, Carlo De, Matteo Borga, Karen Geens, et al.. (2021). Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization. Materials. 14(9). 2316–2316. 28 indexed citations
9.
You, Shuzhen, Xiangdong Li, Karen Geens, et al.. (2021). GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V T instability effect. Semiconductor Science and Technology. 36(3). 35008–35008. 1 indexed citations
10.
Li, Xiangdong, Benoit Bakeroot, Nooshin Amirifar, et al.. (2021). Reliability of p-GaN Gate HEMTs in Reverse Conduction. IEEE Transactions on Electron Devices. 68(2). 645–652. 17 indexed citations
11.
Jaeger, Brice De, Karen Geens, Matteo Borga, et al.. (2021). 200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs. 2021 IEEE International Electron Devices Meeting (IEDM). 5.1.1–5.1.4. 17 indexed citations
12.
Borga, Matteo, Maria Ruzzarin, Carlo De Santi, et al.. (2020). Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs. Applied Physics Express. 13(2). 24004–24004. 22 indexed citations
13.
Minj, Albert, Laurence Méchin, Hongwei Liang, et al.. (2020). Characterization of defect states in Mg-doped GaN-on-Si p + n diodes using deep-level transient Fourier spectroscopy. Semiconductor Science and Technology. 36(2). 24002–24002.
14.
Borga, Matteo, Carlo De Santi, Steve Stoffels, et al.. (2020). Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices. Applied Physics Express. 13(2). 24006–24006. 8 indexed citations
15.
Li, Xiangdong, Karen Geens, D. Wellekens, et al.. (2020). Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates. IEEE Transactions on Semiconductor Manufacturing. 33(4). 534–538. 17 indexed citations
16.
Santi, Carlo De, Matteo Borga, Shuzhen You, et al.. (2020). Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability. Materials. 13(21). 4740–4740. 17 indexed citations
17.
Ruzzarin, Maria, Karen Geens, Matteo Borga, et al.. (2020). Exploration of gate trench module for vertical GaN devices. Microelectronics Reliability. 114. 113828–113828. 11 indexed citations
18.
Amirifar, Nooshin, Karen Geens, Ming Zhao, et al.. (2019). GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion. Ghent University Academic Bibliography (Ghent University). 4.4.1–4.4.4. 64 indexed citations
19.
Hove, M. Van, Xuanwu Kang, Steve Stoffels, et al.. (2013). Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics. IEEE Transactions on Electron Devices. 60(10). 3071–3078. 59 indexed citations
20.
Derluyn, Joff, M. Van Hove, Domenica Visalli, et al.. (2009). Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si<inf>3</inf>N<inf>4</inf>. 1–4. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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