Mark C. Benjamin

863 total citations · 1 hit paper
23 papers, 742 citations indexed

About

Mark C. Benjamin is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Mark C. Benjamin has authored 23 papers receiving a total of 742 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 8 papers in Condensed Matter Physics and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Mark C. Benjamin's work include Semiconductor materials and devices (14 papers), GaN-based semiconductor devices and materials (8 papers) and Ga2O3 and related materials (6 papers). Mark C. Benjamin is often cited by papers focused on Semiconductor materials and devices (14 papers), GaN-based semiconductor devices and materials (8 papers) and Ga2O3 and related materials (6 papers). Mark C. Benjamin collaborates with scholars based in United States, France and Japan. Mark C. Benjamin's co-authors include R. J. Nemanich, R. F. Davis, Sean W. King, Cheng Wang, Carsten Ronning, Matthew Powers, Lisa M. Porter, J. J. Cuomo, Stephen J. Harris and Gary L. Doll and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Mark C. Benjamin

21 papers receiving 716 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)

1994 188 citations Mark C. Benjamin, Cheng Wang et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Mark C. Benjamin United States	12	401	373	338	165	155	23	742
Y.P. Hsu Taiwan	17	307 0.8×	379 1.0×	577 1.7×	215 1.3×	71 0.5×	24	700
M. Kuball United Kingdom	19	430 1.1×	496 1.3×	695 2.1×	244 1.5×	196 1.3×	45	922
J. L. Farvacque France	15	354 0.9×	274 0.7×	309 0.9×	160 1.0×	78 0.5×	72	683
Hiromu Shiomi Japan	17	825 2.1×	691 1.9×	262 0.8×	200 1.2×	363 2.3×	57	1.3k
Satoru Nagao Japan	10	340 0.8×	348 0.9×	623 1.8×	364 2.2×	101 0.7×	21	786
Yuri Makarov Russia	11	325 0.8×	205 0.5×	304 0.9×	174 1.1×	59 0.4×	55	616
S. B. Thapa Germany	14	203 0.5×	273 0.7×	368 1.1×	201 1.2×	98 0.6×	26	522
Li Chang Taiwan	12	256 0.6×	208 0.6×	349 1.0×	180 1.1×	88 0.6×	33	502
Sg. Fujita Japan	16	397 1.0×	556 1.5×	372 1.1×	305 1.8×	69 0.4×	42	859
M. R. Gokhale India	15	283 0.7×	302 0.8×	301 0.9×	182 1.1×	48 0.3×	59	651

Countries citing papers authored by Mark C. Benjamin

Since Specialization

Citations

This map shows the geographic impact of Mark C. Benjamin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mark C. Benjamin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mark C. Benjamin more than expected).

Fields of papers citing papers by Mark C. Benjamin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mark C. Benjamin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mark C. Benjamin. The network helps show where Mark C. Benjamin may publish in the future.

Co-authorship network of co-authors of Mark C. Benjamin

This figure shows the co-authorship network connecting the top 25 collaborators of Mark C. Benjamin. A scholar is included among the top collaborators of Mark C. Benjamin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mark C. Benjamin. Mark C. Benjamin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nichols, J.H., A.G. McLean, R. Maingi, et al.. (2011). Design and Deployment of a Wide-Angle Two-Color Infrared Camera with Optical Relay on NSTX. APS Division of Plasma Physics Meeting Abstracts. 53.

Clarysse, Trudo, Alain Moussa, Frederik Leys, et al.. (2006). Accurate Sheet Resistance Measurement on Ultra-Shallow Profiles. MRS Proceedings. 912. 26 indexed citations

Borland, John, W. Krull, D. C. Jacobson, et al.. (2006). 45nm Node p+ USJ Formation With High Dopant Activation And Low Damage. 4–9. 7 indexed citations

Borland, John, W. Krull, D. C. Jacobson, et al.. (2006). High Dopant Activation And Low Damage P+ USJ Formation. AIP conference proceedings. 866. 96–100. 2 indexed citations

Benjamin, Mark C., et al.. (2005). Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 237(1-2). 351–355. 9 indexed citations

Benjamin, Mark C.. (2005). Determination of Ultra-shallow Junction (USJ) Quality with an Elastic Material Probe (EM-Probe). AIP conference proceedings. 788. 245–248. 1 indexed citations

Mazur, R. G., et al.. (2004). Measurements of Ultra-Shallow Junction (USJ) Sheet Resistance with a Non-Penetrating Four Point Probe. MRS Proceedings. 810. 3 indexed citations

King, Sean W., R. S. Kern, Mark C. Benjamin, et al.. (1999). Chemical Vapor Cleaning of 6H‐SiC Surfaces. Journal of The Electrochemical Society. 146(9). 3448–3454. 15 indexed citations

King, Sean W., R. F. Davis, Carsten Ronning, Mark C. Benjamin, & R. J. Nemanich. (1999). Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001), and (1100) 2H–AlN/6H–SiC interfaces. Journal of Applied Physics. 86(8). 4483–4490. 30 indexed citations

10.

Nemanich, R. J., et al.. (1998). Characterization of electron emitting surfaces of diamond and III-V nitrides. 8(4). 211–223. 3 indexed citations

11.

Benjamin, Mark C.. (1998). Electronic properties of SiC and AlN surfaces and interfaces. 6630. 1 indexed citations

12.

Nemanich, R. J., P. K. Baumann, Mark C. Benjamin, et al.. (1998). Electron emission properties of crystalline diamond and III-nitride surfaces. Applied Surface Science. 130-132. 694–703. 30 indexed citations

13.

Nemanich, R. J., et al.. (1997). Electron emission from diamond and other wide-bandgap semiconductors. 537–554. 1 indexed citations

14.

King, Sean W., et al.. (1996). Ex Situ and In Situ Methods for Complete Oxygen and Non-Carbidic Carbon Removal from (0001)_SI 6H-SiC Surfaces. MRS Proceedings. 423.

15.

Benjamin, Mark C., M. D. Bremser, T. W. Weeks, et al.. (1996). UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC. Applied Surface Science. 104-105. 455–460. 60 indexed citations

16.

Powers, Matthew, Mark C. Benjamin, Lisa M. Porter, et al.. (1995). Observation of a negative electron affinity for boron nitride. Applied Physics Letters. 67(26). 3912–3914. 152 indexed citations

17.

Nemanich, R. J., Mark C. Benjamin, M. D. Bremser, et al.. (1995). (Negative) Electron Affinity of AlN and AlGaN Alloys. MRS Proceedings. 395. 30 indexed citations

18.

King, Sean W., Laura L. Smith, J. P. Barnak, et al.. (1995). Ex Situ and in Situ Methods for Oxide and Carbon Removal from AlN and GaN Surfaces. MRS Proceedings. 395. 18 indexed citations

19.

King, Sean W., Mark C. Benjamin, R. J. Nemanich, R. F. Davis, & Walter R. L. Lambrecht. (1995). XPS Measurement of the SiC/AlN Band-Offset at the (0001) Interface. MRS Proceedings. 395. 14 indexed citations

20.

Benjamin, Mark C., Cheng Wang, R. F. Davis, & R. J. Nemanich. (1994). Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001). Applied Physics Letters. 64(24). 3288–3290. 188 indexed citations breakdown →

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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