Michael Current

1.7k total citations
116 papers, 1.2k citations indexed

About

Michael Current is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Michael Current has authored 116 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 98 papers in Electrical and Electronic Engineering, 30 papers in Computational Mechanics and 22 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Michael Current's work include Integrated Circuits and Semiconductor Failure Analysis (68 papers), Semiconductor materials and devices (56 papers) and Silicon and Solar Cell Technologies (48 papers). Michael Current is often cited by papers focused on Integrated Circuits and Semiconductor Failure Analysis (68 papers), Semiconductor materials and devices (56 papers) and Silicon and Solar Cell Technologies (48 papers). Michael Current collaborates with scholars based in United States, Japan and Taiwan. Michael Current's co-authors include David N. Seidman, Ching-Yeu Wei, N.W. Cheung, C. W. Magee, M. A. Lieberman, Xueyu Qian, John Borland, T. Dı́az de la Rubia, Mark E. Law and J. Melngailis and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Michael Current

101 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Michael Current United States 19 915 382 381 261 189 116 1.2k
John J. Adams United States 16 395 0.4× 328 0.9× 323 0.8× 196 0.8× 182 1.0× 41 923
N. Tomozeiu Netherlands 17 477 0.5× 199 0.5× 440 1.2× 130 0.5× 107 0.6× 49 750
J. Perrière France 19 528 0.6× 233 0.6× 671 1.8× 150 0.6× 160 0.8× 52 1.0k
Shigeki Sakaguchi Japan 19 648 0.7× 141 0.4× 300 0.8× 287 1.1× 170 0.9× 76 1.1k
Supakit Charnvanichborikarn United States 17 509 0.6× 252 0.7× 472 1.2× 182 0.7× 149 0.8× 42 932
Narumi Inoue Japan 17 402 0.4× 354 0.9× 358 0.9× 127 0.5× 258 1.4× 88 874
I. Golecki United States 15 506 0.6× 172 0.5× 371 1.0× 166 0.6× 63 0.3× 42 948
Yu. N. Drozdov Russia 13 431 0.5× 124 0.3× 428 1.1× 413 1.6× 128 0.7× 190 917
Marie‐Laure David France 17 571 0.6× 154 0.4× 358 0.9× 134 0.5× 66 0.3× 61 830
R. B. Gregory United States 15 670 0.7× 84 0.2× 419 1.1× 252 1.0× 164 0.9× 48 919

Countries citing papers authored by Michael Current

Since Specialization
Citations

This map shows the geographic impact of Michael Current's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michael Current with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michael Current more than expected).

Fields of papers citing papers by Michael Current

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michael Current. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michael Current. The network helps show where Michael Current may publish in the future.

Co-authorship network of co-authors of Michael Current

This figure shows the co-authorship network connecting the top 25 collaborators of Michael Current. A scholar is included among the top collaborators of Michael Current based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Michael Current. Michael Current is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Seidel, Thomas E. & Michael Current. (2020). Limited dose and angle-directed beam atomic layer etching and atomic layer deposition processes for localized film coatings on 3D sidewall structures. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(2). 2 indexed citations
2.
Current, Michael, et al.. (2018). Ion Erosion and Particle Release in Graphite Materials. 319–322. 1 indexed citations
3.
Sung, Po-Jung, Fu-Ju Hou, Fu-Kuo Hsueh, et al.. (2017). High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled Applications. IEEE Transactions on Electron Devices. 64(5). 2054–2060. 15 indexed citations
4.
Lee, Wen-Hsi, et al.. (2017). Effect of microwave annealing on electrical characteristics of TiN/Al/TiN/HfO2/Si MOS capacitors. Applied Physics Letters. 111(1). 12 indexed citations
5.
Mane, Anil U., Jeffrey W. Elam, Alexander Goldberg, et al.. (2015). Atomic layer deposition of boron-containing films using B2F4. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 34(1). 8 indexed citations
6.
Lee, Yao‐Jen, Fu-Kuo Hsueh, Po-Jung Sung, et al.. (2014). Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review. IEEE Transactions on Electron Devices. 61(3). 651–665. 56 indexed citations
7.
Lee, Yao‐Jen, et al.. (2013). Low-Temperature Microwave Annealing for MOSFETs With High-k/Metal Gate Stacks. IEEE Electron Device Letters. 34(10). 1286–1288. 15 indexed citations
8.
Current, Michael & John Borland. (2008). New metrologies for annealing of USJs and thin films. 39. 43–55. 2 indexed citations
9.
Clarysse, Trudo, Alain Moussa, Frederik Leys, et al.. (2006). Accurate Sheet Resistance Measurement on Ultra-Shallow Profiles. MRS Proceedings. 912. 26 indexed citations
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Current, Michael. (2002). Nanocleaving: an enabling technology for ultra-thin SOI. 97–101. 1 indexed citations
15.
Hara, Tohru, et al.. (2000). Diffusion of ion-implanted boron impurities into pre-amorphized silicon. Materials Science in Semiconductor Processing. 3(3). 221–225. 8 indexed citations
16.
Foad, M.A., et al.. (1999). Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants. MRS Proceedings. 568. 8 indexed citations
17.
Current, Michael, et al.. (1993). MICROUNIFORMITY MEASUREMENTS OF ION-IMPLANTED SILICON. View. 1 indexed citations
18.
Qian, Xueyu, D. Carl, N.W. Cheung, et al.. (1991). A plasma immersion ion implantation reactor for ULSI fabrication. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 55(1-4). 884–887. 18 indexed citations
19.
Current, Michael, et al.. (1991). Monitoring the micro-uniformity performance of a spinning disk implanter. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 55(1-4). 173–177. 1 indexed citations
20.
Current, Michael, et al.. (1985). Ion implant round robin. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 6(1-2). 418–426. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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