W. Vandervorst

1.8k citations

98 papers · 1.4k indexed · h-index 21

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
Atomic and Molecular Physics, and Optics top 5%
- Force Microscopy Techniques and Applications
- Semiconductor materials and interfaces

Papers in ⓘ

Surfaces, Coatings and Films 13
- Electron and X-Ray Spectroscopy Techniques 13
Electrical and Electronic Engineering 92
- Semiconductor materials and devices 51
- Integrated Circuits and Semiconductor Failure Analysis 48
- Silicon and Solar Cell Technologies 25
- Advancements in Semiconductor Devices and Circuit Design 12
- Thin-Film Transistor Technologies 10

Co-authors: Trudo Clarysse (18 shared papers)Pierre Eyben (11 shared papers)Peter Wolf (4 shared papers)L. Hellemans (6 shared papers)J. Snauwaert (4 shared papers)Tom Janssens (6 shared papers)Marc Meuris (5 shared papers)Bert Brijs (7 shared papers)
Journals: Applied Physics Letters (12 papers)Journal of Applied Physics (8 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (6 papers)Applied Surface Science (5 papers)Thin Solid Films (3 papers)
Partner nations: Belgium United States Japan

In The Last Decade

W. Vandervorst

95 papers receiving 1.4k citations

Peers

Countries citing papers authored by W. Vandervorst

Since Specialization

Citations

This map shows the geographic impact of W. Vandervorst's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Vandervorst with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Vandervorst more than expected).

Fields of papers citing papers by W. Vandervorst

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Vandervorst. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Vandervorst. The network helps show where W. Vandervorst may publish in the future.

Co-authors

The 25 scholars most cited alongside W. Vandervorst, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W. Vandervorst Line = papers co-authored together W. Vandervorst links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 98 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Characterization of a point-contact on silicon using force microscopy-supported resistance measurements Applied Physics Letters ·Peter Wolf, J. Snauwaert, Trudo Clarysse, W. Vandervorst, L. Hellemans	1995	95
2	Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions Applied Physics Letters ·Bartek Pawlak, R. Surdeanu, B. Colombeau, A. J. Smith, N. E. B. Cowern, Richard Lindsay, W. Vandervorst, Bert Brijs, Olivier Richard, F. Cristiano	2004	86
3	Diffusion, activation, and regrowth behavior of high dose P implants in Ge Applied Physics Letters ·A. Satta, Eddy Simoen, Ray Duffy, Tom Janssens, Trudo Clarysse, A. Benedetti, Marc Meuris, W. Vandervorst	2006	77
4	Phase formation and thermal stability of ultrathin nickel-silicides on Si(100) Applied Physics Letters ·K. De Keyser, C. Van Bockstael, R.L. Van Meirhaeghe, Christophe Detavernier, Eveline Verleysen, H. Bender, W. Vandervorst, Jean Jordan‐Sweet, C. Lavoie	2010	65
5	Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Tom Janssens, Cedric Huyghebaert, Danielle Vanhaeren, Gillis Winderickx, A. Satta, Marc Meuris, W. Vandervorst	2006	50
6	Sub-5-nm-spatial resolution in scanning spreading resistance microscopy using full-diamond tips Applied Physics Letters ·David Álvarez, J. Hartwich, Marc Fouchier, Pierre Eyben, W. Vandervorst	2003	47
7	Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon Applied Physics Letters ·B. J. Pawlak, T. Janssens, Bert Brijs, W. Vandervorst, E. J. H. Collart, Susan B. Felch, N. E. B. Cowern	2006	46
8	Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories Nanoscale ·Umberto Celano, Guido Giammaria, L. Goux, Attilio Belmonte, M. Jurczak, W. Vandervorst	2016	44
9	Progress towards a physical contact model for scanning spreading resistance microscopy Materials Science and Engineering B ·Pierre Eyben, S Denis, Trudo Clarysse, W. Vandervorst	2003	41
10	Lateral and vertical dopant profiling in semiconductors by atomic force microscopy using conducting tips Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Peter Wolf, J. Snauwaert, L. Hellemans, Trudo Clarysse, W. Vandervorst, M. D’Olieslaeger, D. Quaeyhaegens	1995	41
11	Influence of the composition of the altered layer on the ripple formation Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Kathy Elst, W. Vandervorst	1994	39
12	A Comparison of Spike, Flash, SPER and Laser Annealing for 45nm CMOS MRS Proceedings ·Richard Lindsay, B. J. Pawlak, J. A. Kittl, K. Henson, C. Torregiani, Simone Giangrandi, R. Surdeanu, W. Vandervorst, A. J. Mayur, Jason F. Ross, S. McCoy, J. Gelpey, K. Elliott, Xavier Llimona i Pagès, A. Satta, A. Lauwers, P.A. Stolk, Karen Maex	2003	36
13	Observation of diameter dependent carrier distribution in nanowire-based transistors Nanotechnology ·Andreas Schulze, Thomas Hantschel, Pierre Eyben, Anne S. Verhulst, R. Rooyackers, A. Vandooren, Jay Mody, Arif Nazir, Daniele Leonelli, W. Vandervorst	2011	35
14	Errors in near-surface and interfacial profiling of boron and arsenic Applied Surface Science ·W. Vandervorst, Tom Janssens, Bert Brijs, Thierry Conard, Cedric Huyghebaert, Jens Frühauf, A. Bergmaier, G. Dollinger, Temel Büyüklimanli, (unknown), Kenji Kimura	2004	35
15	Sub-10 nm low current resistive switching behavior in hafnium oxide stack Applied Physics Letters ·Yi Hou, Umberto Celano, L. Goux, L Liu, A. Fantini, R. Degraeve, Ali Youssef, Zheng Xu, Yang Cheng, Jian Kang, M. Jurczak, W. Vandervorst	2016	29
16	Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane Journal of Crystal Growth ·Benjamin Vincent, Roger Loo, W. Vandervorst, Guy Brammertz, Matty Caymax	2010	28
17	High-Hole-Mobility Silicon Germanium on Insulator Substrates with High Crystalline Quality Obtained by the Germanium Condensation Technique Journal of The Electrochemical Society ·Laurent Souriau, Thang K. Nguyen, E. Augendre, Roger Loo, V. Terzieva, Matty Caymax, S. Cristoloveanu, Marc Meuris, W. Vandervorst	2009	27
18	Quantification of nanospreading resistance profiling data Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Peter Wolf, Trudo Clarysse, W. Vandervorst	1998	27
19	Conformal Doping of FINFETs: a Fabrication and Metrology Challenge AIP conference proceedings ·W. Vandervorst, J.-L. Everaert, Eveline Rosseel, M. Jurczak, T. Hoffman, Pierre Eyben, Jay Mody, G. Zschätzsch, Sebastian Koelling, M. Gilbert, Ting‐Chung Poon, J. del Agua Borniquel, M.A. Foad, Ray Duffy, B. J. Pawlak, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko	2008	23
20	Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane Applied Physics Letters ·Kris Baert, J. Symons, W. Vandervorst, Jan Vanhellemont, Matty Caymax, J. Poortmans, J. Nijs, R. Mertens	1987	22

About W. Vandervorst

W. Vandervorst is a scholar working on Surfaces, Coatings and Films, Electrical and Electronic Engineering, Computational Mechanics, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 98 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (51 papers), Integrated Circuits and Semiconductor Failure Analysis (48 papers), Ion-surface interactions and analysis (27 papers), Silicon and Solar Cell Technologies (25 papers), Force Microscopy Techniques and Applications (15 papers), Electron and X-Ray Spectroscopy Techniques (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Thin-Film Transistor Technologies (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.2k citations), Atomic and Molecular Physics, and Optics (650 citations), Computational Mechanics (263 citations), Structural Biology (12 citations) and Surfaces, Coatings and Films (54 citations). W. Vandervorst has collaborated with scholars based in Belgium, United States and Japan. Frequent co-authors include Trudo Clarysse, Pierre Eyben, Peter Wolf, L. Hellemans, J. Snauwaert, Tom Janssens, Marc Meuris, Bert Brijs, Thomas Hantschel and Kathy Elst. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Applied Surface Science and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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