W. Vandervorst

1.8k total citations
98 papers, 1.4k citations indexed

About

W. Vandervorst is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, W. Vandervorst has authored 98 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 92 papers in Electrical and Electronic Engineering, 27 papers in Atomic and Molecular Physics, and Optics and 27 papers in Computational Mechanics. Recurrent topics in W. Vandervorst's work include Semiconductor materials and devices (51 papers), Integrated Circuits and Semiconductor Failure Analysis (48 papers) and Ion-surface interactions and analysis (27 papers). W. Vandervorst is often cited by papers focused on Semiconductor materials and devices (51 papers), Integrated Circuits and Semiconductor Failure Analysis (48 papers) and Ion-surface interactions and analysis (27 papers). W. Vandervorst collaborates with scholars based in Belgium, United States and Japan. W. Vandervorst's co-authors include Trudo Clarysse, Pierre Eyben, Peter Wolf, L. Hellemans, J. Snauwaert, Marc Meuris, Tom Janssens, Bert Brijs, Thomas Hantschel and H. Bender and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

W. Vandervorst

95 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Vandervorst Belgium 21 1.2k 650 325 315 263 98 1.4k
A. Mesli France 19 1.1k 0.9× 615 0.9× 340 1.0× 136 0.4× 154 0.6× 83 1.2k
Trudo Clarysse Belgium 27 2.0k 1.7× 1.4k 2.1× 411 1.3× 525 1.7× 292 1.1× 127 2.3k
F. Ajustron France 15 484 0.4× 655 1.0× 274 0.8× 271 0.9× 149 0.6× 42 1.0k
C. Grivas United Kingdom 20 834 0.7× 563 0.9× 303 0.9× 122 0.4× 155 0.6× 47 1.0k
V. V. Kveder Russia 19 1.3k 1.1× 827 1.3× 758 2.3× 167 0.5× 107 0.4× 95 1.6k
M. Voelskow Germany 18 918 0.8× 286 0.4× 621 1.9× 180 0.6× 200 0.8× 124 1.2k
J. C. Pfister France 19 1.4k 1.2× 863 1.3× 761 2.3× 340 1.1× 138 0.5× 72 1.6k
Stephen T. Purcell France 19 472 0.4× 581 0.9× 898 2.8× 387 1.2× 82 0.3× 55 1.3k
H. Presting Germany 22 972 0.8× 1.0k 1.6× 998 3.1× 358 1.1× 68 0.3× 94 1.6k
J. P. Nys France 22 757 0.6× 779 1.2× 547 1.7× 573 1.8× 59 0.2× 57 1.3k

Countries citing papers authored by W. Vandervorst

Since Specialization
Citations

This map shows the geographic impact of W. Vandervorst's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Vandervorst with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Vandervorst more than expected).

Fields of papers citing papers by W. Vandervorst

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Vandervorst. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Vandervorst. The network helps show where W. Vandervorst may publish in the future.

Co-authorship network of co-authors of W. Vandervorst

This figure shows the co-authorship network connecting the top 25 collaborators of W. Vandervorst. A scholar is included among the top collaborators of W. Vandervorst based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Vandervorst. W. Vandervorst is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Celano, Umberto, et al.. (2016). Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories. Nanoscale. 8(29). 13915–13923. 44 indexed citations
2.
Schulze, Andreas, Rui Cao, Pierre Eyben, Thomas Hantschel, & W. Vandervorst. (2015). Outwitting the series resistance in scanning spreading resistance microscopy. Ultramicroscopy. 161. 59–65. 11 indexed citations
3.
Jiang, Shidong, Clément Merckling, Alain Moussa, et al.. (2015). Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width. ECS Journal of Solid State Science and Technology. 4(7). N83–N87. 3 indexed citations
4.
Koelling, Sebastian, et al.. (2013). Optimal laser positioning for laser-assisted atom probe tomography. Ultramicroscopy. 132. 70–74. 2 indexed citations
5.
Schulze, Andreas, Thomas Hantschel, Pierre Eyben, et al.. (2011). Observation of diameter dependent carrier distribution in nanowire-based transistors. Nanotechnology. 22(18). 185701–185701. 35 indexed citations
6.
Keyser, K. De, R.L. Van Meirhaeghe, Christophe Detavernier, et al.. (2010). Phase formation and thermal stability of ultrathin nickel-silicides on Si(100). Applied Physics Letters. 96(17). 65 indexed citations
7.
Vincent, Benjamin, Roger Loo, W. Vandervorst, Guy Brammertz, & Matty Caymax. (2010). Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane. Journal of Crystal Growth. 312(19). 2671–2676. 28 indexed citations
8.
Vandervorst, W., M. Jurczak, T. Hoffman, et al.. (2008). Conformal Doping of FINFETs: a Fabrication and Metrology Challenge. AIP conference proceedings. 449–456. 23 indexed citations
9.
Janssens, Tom, Cedric Huyghebaert, Danielle Vanhaeren, et al.. (2006). Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(1). 510–514. 50 indexed citations
10.
Vandervorst, W.. (2003). Carrier Illumination as a tool to probe implant dose and electrical activation. AIP conference proceedings. 683. 758–763. 6 indexed citations
11.
Eyben, Pierre, et al.. (2003). Progress towards a physical contact model for scanning spreading resistance microscopy. Materials Science and Engineering B. 102(1-3). 132–137. 41 indexed citations
12.
Xu, Man, Thomas Hantschel, & W. Vandervorst. (2002). Three-dimensional carrier profiling of InP-based devices using scanning spreading resistance microscopy. Applied Physics Letters. 81(1). 177–179. 18 indexed citations
13.
Gendt, Stefan De, Marc Heyns, Thierry Conard, et al.. (2002). Gate stack preparation with high-k materials in a cluster tool. 395–398. 1 indexed citations
14.
Eyben, Pierre, Ingrid De Wolf, R. Rooyackers, et al.. (2001). SSRM and SCM observation of modified lateral diffusion of As, BF2 and Sb induced by nitride spacers.. MRS Proceedings. 669. 4 indexed citations
15.
Olmedo, José Javier Serrano, et al.. (2001). Simulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionization. Journal of Applied Physics. 89(9). 5191–5198. 4 indexed citations
16.
Witte, H. De, Thierry Conard, W. Vandervorst, & R. Gijbels. (2000). Study of oxynitrides with dual beam TOF-SIMS. 611–614.
17.
Loo, Roger, Matty Caymax, T. Conard, et al.. (1998). Ultra thin gate oxides for 0.1um heterojunction CMOS applications by the use of a sacrifical Si layer. 608–611. 3 indexed citations
18.
Clarysse, Trudo & W. Vandervorst. (1992). A contact model for Poisson-based spreading resistance correction schemes incorporating Schottky barrier and pressure effects. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(1). 413–420. 5 indexed citations
19.
Baert, Kris, et al.. (1987). Screen printing technology for backside metallization of a-Si:H solar cells. Photovoltaic Specialists Conference. 1081–1085. 1 indexed citations
20.
Baert, Kris, W. Vandervorst, Jan Vanhellemont, et al.. (1987). Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane. Applied Physics Letters. 51(23). 1922–1924. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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