Philippe Godignon

9.2k total citations · 2 hit papers
344 papers, 7.1k citations indexed

About

Philippe Godignon is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Philippe Godignon has authored 344 papers receiving a total of 7.1k indexed citations (citations by other indexed papers that have themselves been cited), including 312 papers in Electrical and Electronic Engineering, 74 papers in Atomic and Molecular Physics, and Optics and 50 papers in Materials Chemistry. Recurrent topics in Philippe Godignon's work include Silicon Carbide Semiconductor Technologies (268 papers), Semiconductor materials and devices (137 papers) and Semiconductor materials and interfaces (62 papers). Philippe Godignon is often cited by papers focused on Silicon Carbide Semiconductor Technologies (268 papers), Semiconductor materials and devices (137 papers) and Semiconductor materials and interfaces (62 papers). Philippe Godignon collaborates with scholars based in Spain, France and United Kingdom. Philippe Godignon's co-authors include José del R. Millán, Amador Pérez‐Tomás, J. Rebollo, X. Perpiñà, Nicolas Camara, N. Mestres, Rainer Hillenbrand, Jianing Chen, Sukosin Thongrattanasiri and Florian Huth and has published in prestigious journals such as Nature, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

Philippe Godignon

331 papers receiving 6.9k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

A Survey of Wide Bandgap Power Semiconductor Devices

2013 1.9k citations José del R. Millán, Philippe Godignon et al. profile →
Optical nano-imaging of gate-tunable graphene plasmons

2012 1.6k citations Philippe Godignon et al. profile →

Peers

Countries citing papers authored by Philippe Godignon

Since Specialization

Citations

This map shows the geographic impact of Philippe Godignon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Philippe Godignon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Philippe Godignon more than expected).

Fields of papers citing papers by Philippe Godignon

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Philippe Godignon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Philippe Godignon. The network helps show where Philippe Godignon may publish in the future.

Co-authorship network of co-authors of Philippe Godignon

This figure shows the co-authorship network connecting the top 25 collaborators of Philippe Godignon. A scholar is included among the top collaborators of Philippe Godignon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Philippe Godignon. Philippe Godignon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·(unknown), S. Kerdilès, (unknown), Philippe Godignon, (unknown), Romain Laviéville, Nicolas Vaxelaire, Patrice Gergaud, Adeline Grenier, (unknown), (unknown), (unknown), (unknown), Lu Lu, Toshiyuki Tabata	0
2	State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy 2024 ·Physics in Medicine and Biology ·C. Fleta, G. Pellegrini, Philippe Godignon, (unknown), (unknown), Rafael Kranzer, Andreas Schüller	13
3	Characterization of new silicon carbide neutron detectors with thermal and fast neutrons 2024 ·Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·(unknown), (unknown), C. Fleta, B. Fernández, C. Guerrero, Philippe Godignon, G. Pellegrini, (unknown), Consuelo Guardiola	2
4	Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·(unknown), (unknown), Massimo Camarda, Patrick Fiorenza, Antonio Massimiliano Mio, Viviana Scuderi, Philippe Godignon, (unknown), L. Calcagno, Francesco La Via	0
5	Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation 2023 ·Journal of Instrumentation ·(unknown), (unknown), (unknown), (unknown), G. Pellegrini, Philippe Godignon, J.M. Rafı́, T. Bergauer	10
6	Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction 2023 ·Materials science forum ·(unknown), François Cauwet, (unknown), Ulrike Großner, (unknown), Gemma Rius, Philippe Godignon, Gabriel Ferro	1
7	Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors 2023 ·IEEE Transactions on Nuclear Science ·J.M. Rafı́, G. Pellegrini, Philippe Godignon, Gemma Rius, (unknown), Isao Tsunoda, (unknown), Kenichiro Takakura, G. Kramberger, M. Moll	7
8	Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding 2022 ·IEEE Electron Device Letters ·(unknown), (unknown), M. Vellvehı́, X. Jordà, Philippe Godignon, X. Perpiñà	3
9	Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate 2022 ·Materials science forum ·(unknown), A. García-García, Gemma Rius, Philippe Godignon	0
10	Electronic interface and charge carrier density in epitaxial graphene on silicon carbide. A review on metal–graphene contacts and electrical gating 2020 ·APL Materials ·(unknown), A. García-García, Philippe Godignon, Gemma Rius	14
11	Reliability and Robustness Tests for Next-Generation High-Voltage SiC MOSFETs 2020 ·IEEE Journal of Emerging and Selected Topics in Power Electronics ·Victor Soler, (unknown), V. Banu, X. Jordà, J. Montserrat, J. Rebollo, (unknown), Andrei Mihăilă, Philippe Godignon	9
12	Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors 2018 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), (unknown), Nazareno Donato, (unknown), (unknown), Richard B. Jackman, (unknown), Philippe Godignon, David Eon, Julien Pernot, Florin Udrea, E. Gheeraert	13
13	Flexible Graphene Solution‐Gated Field‐Effect Transistors: Efficient Transducers for Micro‐Electrocorticography 2017 ·Advanced Functional Materials ·Clément Hébert, Eduard Masvidal‐Codina, (unknown), Andrea Bonaccini Calia, Gaëlle Piret, Ramon Garcia‐Cortadella, Xavi Illa, Elena del Corro, (unknown), (unknown), Elisabet Prats‐Alfonso, J Bousquet, Philippe Godignon, Blaise Yvert, Rosa Villa, María V. Sánchez-Vives, Anton Guimerà‐Brunet, José A. Garrido	91
14	Planar edge terminations for high voltage 4H-SiC power MOSFETs 2017 ·Semiconductor Science and Technology ·Victor Soler, Maxime Berthou, Andrei Mihăilă, (unknown), Philippe Godignon, J. Rebollo, José del R. Millán	7
15	Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes 2013 ·Materials science forum ·(unknown), (unknown), (unknown), Dominique Planson, Maxime Berthou, Philippe Godignon, (unknown), Pierre Brosselard	6
16	High-temperature stability performance of 4H-SiC Schottky diodes 2009 ·European Conference on Power Electronics and Applications ·(unknown), (unknown), Jordán, (unknown), (unknown), (unknown), (unknown), Philippe Godignon	2
17	High-temperature stability performance of 4H-SiC Schottky diodes 2009 ·European Conference on Power Electronics and Applications ·E. Maset, E. Sanchis-Kilders, J. Jordán, J.B. Ejea, A. Ferreres, V. Esteve, José del R. Millán, Philippe Godignon	2
18	Hybrid Si/SiC and fully integrated all SiC cascode configured power switches for high voltage applications 2003 ·Cambridge University Engineering Department Publications Database ·(unknown), Florin Udrea, Philippe Godignon, Gheorghe Brezeanu, (unknown), (unknown), José del R. Millán, (unknown)	2
19	Simulation and Experimental Results of Al Doping by Ion Beam Mixing Technique for Deep Low Doped Junction Formation 1996 ·European Solid-State Device Research Conference ·Philippe Godignon, E. Morvan, J. Montserrat, X. Jordà, M. Vellvehı́, S. Hidalgo, J. Rebollo	1
20	A New Lateral Insulated Gate Bipolar Transistor Structure with Improved Electrical Characteristics 1995 ·European Solid-State Device Research Conference ·(unknown), Philippe Godignon, D. Flores, J.F. Fernández, S. Hidalgo, J. Rebollo, José del R. Millán	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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