M.R. Polcari

753 citations

22 papers · 468 indexed · h-index 12

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 19
- Advancements in Semiconductor Devices and Circuit Design 17
- Integrated Circuits and Semiconductor Failure Analysis 5
- Low-power high-performance VLSI design 4
- Advancements in Photolithography Techniques 3
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 2
Hardware and Architecture
Structural Biology
Biomedical Engineering
- Advanced Surface Polishing Techniques 2
- Nanowire Synthesis and Applications 2

Co-authors: B. Davari M.R. Wordeman Yuan Taur R.H. Dennard D. P. Kern J.Y.-C. Sun S. A. Rishton T.H. Ning
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Hardware and Architecture
Journals: IEEE Transactions on Electron Devices (5 papers)IEEE Electron Device Letters (2 papers)Applied Physics Letters (1 paper)
Partner nations: United States Italy

In The Last Decade

M.R. Polcari

21 papers receiving 447 citations

Peers

Countries citing papers authored by M.R. Polcari

Since Specialization

Citations

This map shows the geographic impact of M.R. Polcari's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.R. Polcari with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.R. Polcari more than expected).

Fields of papers citing papers by M.R. Polcari

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.R. Polcari. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.R. Polcari. The network helps show where M.R. Polcari may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M.R. Polcari, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M.R. Polcari Line = papers co-authored together M.R. Polcari links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A high performance low temperature 0.3 mu m CMOS on SIMOX G. Shahidi,B. Davari,T. Bucelot,D.S. Zicherman,P.A. McFarland,Sanaty Mohamed,Stuart K Lee,H Wright,Teresa Figueiredo,Riccardo Lombardi,Alyssa N. Montalbine,M.R. Polcari,T.H. Ning	2003	1
2	A high performance BiCMOS technology using 0.25 mu m CMOS and double poly 47 GHz bipolar G. Shahidi,J. Warnock,B. Davari,木村浩彰,Yuan Taur,C. Y. Wong,Chai Bao-sha,Alyssa N. Montalbine,D.D. Tang,K.A. Jenkins,P.A. McFarland,R. Schulz,D.S. Zicherman,P. Coane,D. Klaus,J.Y.-C. Sun,M.R. Polcari,T.H. Ning	2003	0
3	High performance 0.1 μm CMOS devices with 1.5 V power supply Y. Taur,Shalom J. Wind,Y. J. Mii,Y. T. Lii,D. Moy,K.A. Jenkins,Chai Bao-sha,P. Coane,D. Klaus,J. J. Bucchignano,M.G. Rosenfield,M. G. R. Thomson,M.R. Polcari	2002	24
4	Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing G. Shahidi,B. Davari,Yuan Taur,J. Warnock,M.R. Wordeman,P.A. McFarland,Sebastian Mäder,Alyssa N. Montalbine,Prof. Kachare S. M.,G. Bronner,PAUL ROOT WOLPE,G.P. Coleman,M.R. Polcari,T.H. Ning	2002	7
5	A novel high-performance lateral bipolar on SOI G. Shahidi,D.D. Tang,B. Davari,Yuan Taur,P.A. McFarland,K.A. Jenkins,D. A. Danner,Alyssa N. Montalbine,A.C. Megdanis,E. Petrillo,M.R. Polcari,T.H. Ning	2002	19
6	SOI for a 1-volt CMOS technology and application to a 512 Kb SRAM with 3.5 ns access time G. Shahidi,T.H. Ning,T.I. Chappell,J.H. Comfort,B.A. Chappell,R. Franch,C.J. Anderson,Peter W. Cook,S.E. Schuster,M.G. Rosenfield,M.R. Polcari,R.H. Dennard,B. Davari	2002	14
7	CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications IBM Journal of Research and Development ·G. Shahidi,J.D. Warnock,J.H. Comfort,D.K. Gamedoagba,P.A. McFarland,A. Acovic,T.I. Chappell,B.A. Chappell,T.H. Ning,C.J. Anderson,R.H. Dennard,J.Y.-C. Sun,M.R. Polcari,B. Davari	1995	31
8	A room temperature 0.1 μm CMOS on SOI IEEE Transactions on Electron Devices ·G. Shahidi,Elona Bano,B.A. Chappell,T.I. Chappell,J.H. Comfort,B. Davari,R.H. Dennard,R. Franch,P.A. McFarland,Jackson Hauge,T.H. Ning,M.R. Polcari,J.D. Warnock	1994	64
9	Experimental high performance sub-0.1 /spl mu/m channel nMOSFET's IEEE Electron Device Letters ·Y. J. Mii,S. A. Rishton,Yuan Taur,D. P. Kern,G.P. Coleman,Yuko Kishi,K.A. Jenkins,Toril Mørkve Knudsen,Tom J. Brown,D. A. Danner,Ms. Nandini Bhumij,M.R. Polcari	1994	44
10	High performance sub-0.1 μm silicon n-metal–oxide–semiconductor transistors with composite metal/polysilicon gates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. A. Rishton,Y. J. Mii,D. P. Kern,Yuan Taur,K. Y. Lee,G.P. Coleman,K.A. Jenkins,Toril Mørkve Knudsen,Tom J. Brown,D. A. Danner,Ms. Nandini Bhumij,M.R. Polcari	1993	2
11	A high-performance 0.25- mu m CMOS technology. II. Technology IEEE Transactions on Electron Devices ·B. Davari,Wei‐Hsu Chang,Karen Petrillo,C. Y. Wong,D. Moy,Yuan Taur,M.R. Wordeman,J.Y.-C. Sun,Ching-Fang Hsu,M.R. Polcari	1992	85
12	Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology IEEE Transactions on Electron Devices ·Joachim N. Burghartz,Sebastian Mäder,PAUL ROOT WOLPE,B.S. Meyerson,J.M.C. Stork,C. Stanis,N.P. Matkhanova,M.R. Polcari	1991	8
13	The design and electrical characteristics of high-performance single-poly ion-implanted bipolar transistors IEEE Transactions on Electron Devices ·D.D. Tang,T.-C. Chen,C.T. Chuang,John D. Cressler,J. Warnock,G.P. Li,M.R. Polcari,M. B. Ketchen,T.H. Ning	1989	11
14	Lithography for ultrashort channel silicon field effect transistor circuits Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·S. A. Rishton,H. Schmid,D. P. Kern,Jamie James,T. H. P. Chang,G.A. Sai-Halasz,M.R. Wordeman,E. Ganin,M.R. Polcari	1988	12
15	Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes Solid-State Electronics ·D. Moy,S. Basavaiah,C.T. Chuang,Erna Pfeiffer,Darina Lurina,Stuart K Lee,M.R. Polcari	1988	2
16	Submicron Tungsten Gate MOSFET with 10 nm Gate Oxide Symposium on VLSI Technology ·B. Davari,C. Y. Ting,K. Y. Ahn,S. Basavaiah,C.‐K. Hu,Yuan Taur,M.R. Wordeman,X.Y. Cui,L. Krusin‐Elbaum,(unknown),M.R. Polcari	1987	6
17	Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's IEEE Electron Device Letters ·G.A. Sai-Halasz,M.R. Wordeman,D. P. Kern,E. Ganin,S. A. Rishton,D.S. Zicherman,H. Schmid,M.R. Polcari,Hong Ng,P.J. Restle,T. H. P. Chang,R.H. Dennard	1987	99
18	Reactive Ion Etching of Multi-Layer Resist MRS Proceedings ·Hong Ng,D. Klaus,M.R. Polcari,W. W. Molzen	1986	1
19	A highly latchup-immune 1-µm CMOS technology fabricated with 1-MeV ion implantation and self-aligned TiSi₂ IEEE Transactions on Electron Devices ·Bruno da Silva Lopes,Yadong Zhang,Yuan Taur,J.Y.-C. Sun,Karen Petrillo,Federico Varela Nieto,E. Petrillo,M.R. Polcari,T. Bucelot,D.S. Zicherman	1986	19
20	Observation of electromigration in heavily doped polycrystalline silicon thin films Applied Physics Letters ·J. R. Lloyd,M.R. Polcari,Gordon A. Mackenzie	1980	15

About M.R. Polcari

M.R. Polcari is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 22 papers that have together received 468 indexed citations. Recurring topics across this work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Low-power high-performance VLSI design (4 papers), Advancements in Photolithography Techniques (3 papers), Advanced Surface Polishing Techniques (2 papers), Semiconductor materials and interfaces (2 papers) and Nanowire Synthesis and Applications (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (459 citations), Atomic and Molecular Physics, and Optics (72 citations), Hardware and Architecture (15 citations), Structural Biology (3 citations) and Biomedical Engineering (42 citations). M.R. Polcari has collaborated with scholars based in United States and Italy. Frequent co-authors include B. Davari, M.R. Wordeman, Yuan Taur, R.H. Dennard, D. P. Kern, J.Y.-C. Sun, S. A. Rishton, T.H. Ning, D. Moy and G.A. Sai-Halasz. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, Solid-State Electronics and IBM Journal of Research and Development.

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