T.H. Ning

8.7k total citations · 1 hit paper
142 papers, 5.2k citations indexed

About

T.H. Ning is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T.H. Ning has authored 142 papers receiving a total of 5.2k indexed citations (citations by other indexed papers that have themselves been cited), including 136 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in T.H. Ning's work include Semiconductor materials and devices (118 papers), Advancements in Semiconductor Devices and Circuit Design (109 papers) and Integrated Circuits and Semiconductor Failure Analysis (29 papers). T.H. Ning is often cited by papers focused on Semiconductor materials and devices (118 papers), Advancements in Semiconductor Devices and Circuit Design (109 papers) and Integrated Circuits and Semiconductor Failure Analysis (29 papers). T.H. Ning collaborates with scholars based in United States, Germany and South Korea. T.H. Ning's co-authors include Yuan Taur, H.N. Yu, C. T. Sah, C. M. Osburn, D.D. Tang, R. Isaac, P.E. Cottrell, R.R. Troutman, R.H. Dennard and Jin Cai and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

T.H. Ning

134 papers receiving 4.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Fundamentals of Modern VLSI Devices

2009 1.3k citations Yuan Taur, T.H. Ning Cambridge University Press eBooks profile →

Peers

Countries citing papers authored by T.H. Ning

Since Specialization

Citations

This map shows the geographic impact of T.H. Ning's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.H. Ning with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.H. Ning more than expected).

Fields of papers citing papers by T.H. Ning

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.H. Ning. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.H. Ning. The network helps show where T.H. Ning may publish in the future.

Co-authorship network of co-authors of T.H. Ning

This figure shows the co-authorship network connecting the top 25 collaborators of T.H. Ning. A scholar is included among the top collaborators of T.H. Ning based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.H. Ning. T.H. Ning is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Fundamentals of Modern VLSI Devices breakdown → 2009 ·Cambridge University Press eBooks ·Yuan Taur, T.H. Ning	1340
2	Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI 2005 ·IEEE Transactions on Nuclear Science ·(unknown), Akil K. Sutton, Marco Bellini, B.M. Haugerud, Jonathan P. Comeau, (unknown), John D. Cressler, Jin Cai, T.H. Ning, Paul W. Marshall, Cheryl J. Marshall	16
3	Silicon VLSI trends - what else besides scaling CMOS to its limit? 2004 ·T.H. Ning	2
4	Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors 2003 ·Journal of Applied Physics ·Arvind Kumar, Massimo V. Fischetti, T.H. Ning, Evgeni Gusev	43
5	A 23 ps/2.1 mW ECL gate 2003 ·(unknown), C.T. Chuang, T.-C. Chen, J. Warnock, (unknown), Ken K. Chin, T.H. Ning	0
6	A simulation study on thin SOI bipolar transistors with fully or partially depleted collector 2003 ·Q. Ouyang, Jin Cai, T.H. Ning, P. Oldiges, J. Johnson	16
7	With SiGe, who needs GaAs? 2002 ·T.H. Ning	0
8	Silicon technology directions in the new millennium 2002 ·T.H. Ning	3
9	D&T roundtable : Power delivery and distribution 2000 ·IEEE Design & Test of Computers ·T.H. Ning, (unknown), Naresh R. Shanbhag, Christine J Nicol, R. L. Preston, T. Gabara	1
10	Hot-electron-induced instability in 0.5- mu m p-channel MOSFETs patterned using synchrotron X-ray lithography 1989 ·IEEE Electron Device Letters ·Ching-Fang Hsu, (unknown), M.R. Wordeman, T.H. Ning	21
11	Design considerations of high-performance narrow-emitter bipolar transistors 1987 ·IEEE Electron Device Letters ·D.D. Tang, Tze-Chiang Chen, Ching-Te Chuang, G.P. Li, J.M.C. Stork, M. B. Ketchen, (unknown), T.H. Ning	25
12	Bipolar trends 1986 ·Proceedings of the IEEE ·T.H. Ning, D.D. Tang	22
13	The Potential of Bipolar Devices for VLSI 1981 ·Symposium on VLSI Technology ·T.H. Ning	2
14	Scaling properties of bipolar devices 1980 ·T.H. Ning, D.D. Tang, P. M. Solomon	23
15	Hot-electron design constraints for one-micron IGFET's 1978 ·T.H. Ning, Peter W. Cook, R.H. Dennard, C. M. Osburn, S.E. Schuster, H.N. Yu	8
16	Thermal reemission of trapped electrons in SiO2 1978 ·Journal of Applied Physics ·T.H. Ning	71
17	Effect of electron trapping on IGFET characteristics 1977 ·Journal of Electronic Materials ·T.H. Ning, C. M. Osburn, H.N. Yu	78
18	Emission probability of hot electrons from silicon into silicon dioxide 1977 ·Journal of Applied Physics ·T.H. Ning, C. M. Osburn, H.N. Yu	216
19	High-field capture of electrons by Coulomb-attractive centers in silicon dioxide 1976 ·Journal of Applied Physics ·T.H. Ning	163
20	Multivalley Effective-Mass Approximation for Donor States in Silicon. II. Deep-Level Group-VI Double-Donor Impurities 1971 ·Physical review. B, Solid state ·T.H. Ning, C. T. Sah	40

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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