T.H. Ning

8.7k total citations · 1 hit paper
142 papers, 5.2k citations indexed

About

T.H. Ning is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T.H. Ning has authored 142 papers receiving a total of 5.2k indexed citations (citations by other indexed papers that have themselves been cited), including 136 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in T.H. Ning's work include Semiconductor materials and devices (118 papers), Advancements in Semiconductor Devices and Circuit Design (109 papers) and Integrated Circuits and Semiconductor Failure Analysis (29 papers). T.H. Ning is often cited by papers focused on Semiconductor materials and devices (118 papers), Advancements in Semiconductor Devices and Circuit Design (109 papers) and Integrated Circuits and Semiconductor Failure Analysis (29 papers). T.H. Ning collaborates with scholars based in United States, Germany and Taiwan. T.H. Ning's co-authors include Yuan Taur, H.N. Yu, C. T. Sah, C. M. Osburn, D.D. Tang, R. Isaac, P.E. Cottrell, R.R. Troutman, R.H. Dennard and Jin Cai and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

T.H. Ning

134 papers receiving 4.8k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Fundamentals of Modern VLSI Devices

2009 1.3k citations Yuan Taur, T.H. Ning Cambridge University Press eBooks profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
T.H. Ning	4.9k	870	716	546	118	142	5.2k
J.R. Brews	4.1k 0.8×	1.3k 1.5×	873 1.2×	328 0.6×	47 0.4×	71	4.4k
D.L. Harame	4.7k 1.0×	1.2k 1.4×	475 0.7×	716 1.3×	36 0.3×	225	5.0k
Chi On Chui	3.8k 0.8×	1.1k 1.3×	923 1.3×	915 1.7×	51 0.4×	109	4.2k
E. H. Snow	3.6k 0.7×	1.2k 1.3×	1.1k 1.5×	334 0.6×	122 1.0×	29	3.9k
Chenming Hu	4.8k 1.0×	441 0.5×	624 0.9×	797 1.5×	24 0.2×	103	5.1k
Takashi Matsukawa	2.7k 0.6×	289 0.3×	552 0.8×	519 1.0×	56 0.5×	316	3.1k
K. De Meyer	5.7k 1.2×	1.1k 1.2×	629 0.9×	946 1.7×	26 0.2×	336	5.9k
S. Cristoloveanu	8.0k 1.6×	888 1.0×	679 0.9×	1.3k 2.3×	35 0.3×	559	8.4k
L. Šekarić	3.7k 0.8×	2.5k 2.9×	516 0.7×	847 1.6×	70 0.6×	52	4.3k
Cor Claeys	5.2k 1.1×	807 0.9×	500 0.7×	648 1.2×	39 0.3×	624	5.5k

Countries citing papers authored by T.H. Ning

Since Specialization

Citations

This map shows the geographic impact of T.H. Ning's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.H. Ning with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.H. Ning more than expected).

Fields of papers citing papers by T.H. Ning

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.H. Ning. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.H. Ning. The network helps show where T.H. Ning may publish in the future.

Co-authorship network of co-authors of T.H. Ning

This figure shows the co-authorship network connecting the top 25 collaborators of T.H. Ning. A scholar is included among the top collaborators of T.H. Ning based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.H. Ning. T.H. Ning is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hekmatshoar, Bahman & T.H. Ning. (2012). Heterojunction bipolar transistors with hydrogenated amorphous silicon contacts on crystalline silicon. Electronics Letters. 48(18). 1161–1163. 1 indexed citations

Zafar, Sufi, et al.. (2011). Optimization of pH sensing using silicon nanowire field effect transistors with HfO₂as the sensing surface. Nanotechnology. 22(40). 405501–405501. 51 indexed citations

Taur, Yuan & T.H. Ning. (2009). Fundamentals of Modern VLSI Devices. Cambridge University Press eBooks. 1340 indexed citations breakdown →

Sutton, Akil K., Marco Bellini, B.M. Haugerud, et al.. (2005). Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI. IEEE Transactions on Nuclear Science. 52(6). 2353–2357. 16 indexed citations

Ning, T.H.. (2004). Silicon VLSI trends - what else besides scaling CMOS to its limit?. 1–4. 2 indexed citations

Kumar, Arvind, Massimo V. Fischetti, T.H. Ning, & Evgeni Gusev. (2003). Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors. Journal of Applied Physics. 94(3). 1728–1737. 43 indexed citations

Chuang, C.T., et al.. (2003). A 23 ps/2.1 mW ECL gate. sc 17. 224–225.

Ouyang, Q., Jin Cai, T.H. Ning, P. Oldiges, & J. Johnson. (2003). A simulation study on thin SOI bipolar transistors with fully or partially depleted collector. 28–31. 16 indexed citations

Ning, T.H., et al.. (2000). D&T roundtable : Power delivery and distribution. IEEE Design & Test of Computers. 17(4). 1 indexed citations

10.

Hsu, Ching-Fang, et al.. (1989). Hot-electron-induced instability in 0.5- mu m p-channel MOSFETs patterned using synchrotron X-ray lithography. IEEE Electron Device Letters. 10(7). 327–329. 21 indexed citations

11.

Tang, D.D. & T.H. Ning. (1987). Advances in Bipolar IC Technology. ThD1–ThD1. 5 indexed citations

12.

Ning, T.H. & D.D. Tang. (1986). Bipolar trends. Proceedings of the IEEE. 22 indexed citations

13.

Lu, Nicky, P.E. Cottrell, Winston J. Craig, et al.. (1985). The SPT cell&#8212;A new substrate-plate trench cell for DRAMs. 771–772. 18 indexed citations

14.

Ning, T.H.. (1981). The Potential of Bipolar Devices for VLSI. Symposium on VLSI Technology. 34–35. 2 indexed citations

15.

Ning, T.H., Peter W. Cook, R.H. Dennard, et al.. (1978). Hot-electron design constraints for one-micron IGFET's. 472–475. 8 indexed citations

16.

Ning, T.H.. (1978). Hot-electron emission from silicon into silicon dioxide. Solid-State Electronics. 21(1). 273–282. 102 indexed citations

17.

Ning, T.H., C. M. Osburn, & H.N. Yu. (1977). Effect of electron trapping on IGFET characteristics. Journal of Electronic Materials. 6(2). 65–76. 78 indexed citations

18.

Ning, T.H., C. M. Osburn, & H.N. Yu. (1977). Emission probability of hot electrons from silicon into silicon dioxide. Journal of Applied Physics. 48(1). 286–293. 216 indexed citations

19.

Ning, T.H.. (1976). High-field capture of electrons by Coulomb-attractive centers in silicon dioxide. Journal of Applied Physics. 47(7). 3203–3208. 163 indexed citations

20.

Ning, T.H., C. M. Osburn, & H.N. Yu. (1975). Electron trapping at positively charged centers in SiO2. Applied Physics Letters. 26(5). 248–250. 44 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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