B.S. Meyerson

10.8k total citations · 2 hit papers
179 papers, 7.9k citations indexed

About

B.S. Meyerson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, B.S. Meyerson has authored 179 papers receiving a total of 7.9k indexed citations (citations by other indexed papers that have themselves been cited), including 159 papers in Electrical and Electronic Engineering, 75 papers in Atomic and Molecular Physics, and Optics and 32 papers in Materials Chemistry. Recurrent topics in B.S. Meyerson's work include Semiconductor materials and devices (95 papers), Advancements in Semiconductor Devices and Circuit Design (86 papers) and Semiconductor Quantum Structures and Devices (57 papers). B.S. Meyerson is often cited by papers focused on Semiconductor materials and devices (95 papers), Advancements in Semiconductor Devices and Circuit Design (86 papers) and Semiconductor Quantum Structures and Devices (57 papers). B.S. Meyerson collaborates with scholars based in United States, Egypt and Australia. B.S. Meyerson's co-authors include F. K. LeGoues, K. Ismail, D.L. Harame, J. O. Chu, J.M.C. Stork, E.F. Crabbé, J. F. Morar, J.H. Comfort, G.L. Patton and Kevin J. Uram and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

B.S. Meyerson

174 papers receiving 7.5k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

1990 369 citations G.L. Patton, J.H. Comfort et al. IEEE Electron Device Letters profile →
Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

1986 349 citations B.S. Meyerson Applied Physics Letters profile →

Peers

Countries citing papers authored by B.S. Meyerson

Since Specialization

Citations

This map shows the geographic impact of B.S. Meyerson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B.S. Meyerson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B.S. Meyerson more than expected).

Fields of papers citing papers by B.S. Meyerson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B.S. Meyerson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B.S. Meyerson. The network helps show where B.S. Meyerson may publish in the future.

Co-authorship network of co-authors of B.S. Meyerson

This figure shows the co-authorship network connecting the top 25 collaborators of B.S. Meyerson. A scholar is included among the top collaborators of B.S. Meyerson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B.S. Meyerson. B.S. Meyerson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Embedding Innovation in Corporate DNA 2016 ·Research-Technology Management ·B.S. Meyerson	3
2	Boron-doped emitters for high-performance vertical pnp transistors 2003 ·J. Warnock, P.-F. Lu, (unknown), B.S. Meyerson	1
3	SiGe technology: application to wireless digital communications 2002 ·(unknown), (unknown), T. Tewksbury, B.S. Meyerson, D.L. Harame, (unknown)	5
4	A Si-Ge HBT Technology for the Wireless Marketplace 1996 ·European Solid-State Device Research Conference ·D. Ahlgren, D.A. Sunderland, (unknown), D. Greenberg, S.J. Jeng, J. Malinowski, D. Nguyen-Ngoc, K. Stein, D.L. Harame, B.S. Meyerson	1
5	Ultrahigh-vacuum CVD process makes SiGe devices. 1994 ·Solid State Technology ·B.S. Meyerson	1
6	New application opportunities for SiGe HBTs 1994 ·Microwave journal ·(unknown), T. Tewksbury, (unknown), (unknown), B.S. Meyerson, D.L. Harame, (unknown)	3
7	SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing 1994 ·IEEE Electron Device Letters ·(unknown), E.S. Yang, (unknown), J. O. Chu, B.S. Meyerson	43
8	Si/Si/sub 1-x/Ge/sub x/ valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure 1994 ·IEEE Transactions on Electron Devices ·(unknown), Jesús A. del Alamo, B. R. Bennett, B.S. Meyerson, E.F. Crabbé, C.G. Sodini, (unknown)	13
9	Room-temperature electron mobility in strained Si/SiGe heterostructures 1993 ·Applied Physics Letters ·Shelby F. Nelson, K. Ismail, J. O. Chu, B.S. Meyerson	91
10	Low-temperature operation of SiGe p-n-p HBTs 1992 ·IEEE Transactions on Electron Devices ·E.F. Crabbé, D.L. Harame, B.S. Meyerson, J.M.C. Stork, J.Y.-C. Sun	2
11	Pt Reactions with Ge, SiGe, and Si/SiGe Superlattices 1992 ·MRS Proceedings ·(unknown), Chin‐An Chang, B.S. Meyerson, J. O. Chu, M. J. Tejwani	5
12	SiGe Heterojunction Bipolar Transistors 1991 ·MRS Proceedings ·M. Arienzo, J.H. Comfort, E.F. Crabbé, (unknown), Subramanian S. Iyer, B.S. Meyerson, G.L. Patton, J.M.C. Stork, (unknown)	9
13	Narrow band gap base heterojunction bipolar transistors using SiGe alloys 1990 ·Thin Solid Films ·Subramanian S. Iyer, G.L. Patton, D.L. Harame, J.M.C. Stork, E.F. Crabbé, B.S. Meyerson	6
14	Diamondlike carbon films by rf plasma-assisted chemical vapor deposition from acetylene 1990 ·IBM Journal of Research and Development ·A. Grill, B.S. Meyerson, V. Patel	69
15	Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology 1990 ·IEEE Electron Device Letters ·Joachim N. Burghartz, J.H. Comfort, G.L. Patton, B.S. Meyerson, J.Y.-C. Sun, J.M.C. Stork, Sebastian Mäder, C. Stanis, G. Scilla, (unknown)	25
16	SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process 1990 ·D.L. Harame, J.M.C. Stork, B.S. Meyerson, E.F. Crabbé, G.L. Patton, G. Scilla, E. de Frésart, A. A. Bright, C. Stanis, A.C. Megdanis, (unknown), E. Petrillo, (unknown), (unknown), K. Chan	10
17	Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation 1989 ·Applied Physics Letters ·F. K. LeGoues, R. Rosenberg, B.S. Meyerson	131
18	Oxygen removal from Si via reaction with adsorbed Ge 1987 ·Applied Physics Letters ·J. F. Morar, B.S. Meyerson, U. O. Karlsson, F. J. Himpsel, F. R. McFeely, D. Rieger, A. Taleb-Ibrahimi, J. A. Yarmoff	34
19	The adsorption of PH3 on Si(100) and its effect on the coadsorption of SiH4 1984 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Ming L. Yu, B.S. Meyerson	65
20	Chemical modification of the electrical properties of hydrogenated amorphous carbon films 1980 ·Solid State Communications ·B.S. Meyerson, F. W. Smith	86

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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