J.D. Hayden

630 citations

34 papers · 326 indexed · h-index 9

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Low-power high-performance VLSI design
- Silicon and Solar Cell Technologies
- Ferroelectric and Negative Capacitance Devices
Hardware and Architecture

Papers in

Electrical and Electronic Engineering 34
- Semiconductor materials and devices 31
- Advancements in Semiconductor Devices and Circuit Design 30
- Integrated Circuits and Semiconductor Failure Analysis 12
- Silicon Carbide Semiconductor Technologies 7
- Low-power high-performance VLSI design 5
- Electrostatic Discharge in Electronics 3
- Advancements in Photolithography Techniques 2
- 3D IC and TSV technologies 2
Biomedical Engineering 2

Co-authors: J.R. Pfiester L.C. Parrillo T.C. Mele F.K. Baker H.‐H. Tseng P.J. Tobin C.D. Gunderson James W. Miller
Journals: IEEE Transactions on Electron Devices (11 papers)IEEE Electron Device Letters (2 papers)IEEE Journal of Solid-State Circuits (1 paper)IEEE Transactions on Semiconductor Manufacturing (1 paper)
Partner nations: United States Japan Canada

In The Last Decade

J.D. Hayden

31 papers receiving 302 citations

Peers

Countries citing papers authored by J.D. Hayden

Since Specialization

Citations

This map shows the geographic impact of J.D. Hayden's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.D. Hayden with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.D. Hayden more than expected).

Fields of papers citing papers by J.D. Hayden

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.D. Hayden. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.D. Hayden. The network helps show where J.D. Hayden may publish in the future.

Co-authors

The 25 scholars most cited alongside J.D. Hayden, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.D. Hayden Line = papers co-authored together J.D. Hayden links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Increasing Microprocessor Speed by Massive Application of On-Die High-K MIM Decoupling Capacitors H. Sanchez, Rhys William Tyers, Yu-Jing Jang, 幸一三上, B. M. Melnick, M. Celik, Michael S. Baker, J.D. Hayden, 靳辉明, Jeremy R. Edgerton, R. E. Hayward	2006	12
2	An ultra-shallow link base for a double polysilicon bipolar transistor J.D. Hayden, E. Betten, J.R. Pfiester, K. Rexroth	2003	0
3	A high-performance sub-half micron CMOS technology for fast SRAMs J.D. Hayden, F.K. Baker, 吴随状, Jan Maluszynski, Kyouko Hirama, Achmad Irawan, T. McNelly, T.C. Mele, Alicia Fábregas, B Lendvay, L.C. Parrillo, W. M. Paulson, J.R. Pfiester, 박철선, Y.C. See, 陈冬卫, C Flegler, P. Kerschl	2003	1
4	The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs F.K. Baker, J.R. Pfiester, T.C. Mele, H.‐H. Tseng, Philip J. Tobin, J.D. Hayden, C.D. Gunderson, L.C. Parrillo	2003	4
5	High performance 0.25 μm SRAM technology with tungsten interpoly plug T. McNelly, J.D. Hayden, Wlodzimierz Wieczlak, J.R. Pfiester, Toshihiro Nakajima, Migongo-Bake, Aye Kibra Erenolu, Sergio A. Ajuria, Carie L Volkar, Benjamin P. Kleinstiver, G.P. Coleman, Hakan Konak, Thomas Roestel, Dhayang Purbono Dewi, Chao Sun, Matthew A. Thompson, Mr.Amit kumar yadav	2002	0
6	A high performance 0.5 mu m BiCMOS triple polysilicon technology for 4 Mb fast SRAMs T.C. Mele, J.D. Hayden, Abul Israt, Achmad Irawan, Y.C. See, Nindy Ayu Pangestu, M. Cobos, Wlodzimierz Wieczlak	2002	4
7	Short-channel vertical NMOSFETs for high density fast SRAMs Wlodzimierz Wieczlak, Craig Lage, J.D. Hayden, Beatrice Orchard Carter, R. Rodríguez, Sergio A. Ajuria	2002	0
8	Characterization and elimination of trench dislocations John Damiano, Toshihiro Nakajima, Myriam C. Postuma, Jhi Kwan Low, Lan Zeng, Andrea De Sosa Tomas, JeffreyV. Winston, Chao Feng, T. McNelly, Migongo-Bake, Wu Fang-Xiang, Huiyun Tian, James M. Scott, Tu Jiali, Josefine Löfblad, Muhammad Kapijan Kapijan, Yuexue Xu, J.D. Hayden	2002	10
9	Sensitivity of field isolation profiles to active pattern Kuang-Chi Lin, J.R. Pfiester, J.D. Hayden, R. Subrahmanyan, R. I. Hegde, V. Kaushik	2002	2
10	Trench isolation for 0.45 μm active pitch and below Wlodzimierz Wieczlak, Beatrice Orchard Carter, Yao-Ching Ku, Ricardo S. Nakaya, B. Taylor, J.D. Hayden, Matthew A. Thompson, Migongo-Bake	2002	9
11	The SCC BJT: a high-performance bipolar transistor compatible with high-density deep-submicrometer BiCMOS SRAM technologies IEEE Transactions on Electron Devices ·Imogen Wall, Craig Lage, J.D. Hayden, H.C. Kirsch, Hakan Konak, Nindy Ayu Pangestu, 卢桢, D.E. Bockelman, N. Camilleri	1995	2
12	An ultra-shallow buried-channel PMOST using boron penetration IEEE Transactions on Electron Devices ·J.R. Pfiester, J.D. Hayden, H.C. Kirsch, H.‐H. Tseng, Umberto Ravaioli	1993	6
13	Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5- mu m BiCMOS technology for fast 4-Mb SRAM's IEEE Transactions on Electron Devices ·J.D. Hayden, E. Betten, A. Perera, T.C. Mele, Abul Israt, V. Kaushik, Craig Lage, Y.C. See	1993	3
14	A high-performance 0.5- mu m BiCMOS technology for fast 4-Mb SRAMs IEEE Transactions on Electron Devices ·J.D. Hayden, T.C. Mele, Wlodzimierz Wieczlak, David C. Burnett, Abul Israt, Craig Lage, F.K. Baker, Mr.Amit kumar yadav, W. M. Paulson, Achmad Irawan, Y.C. See, Nindy Ayu Pangestu, M. Cobos	1992	14
15	A nonrecessed-base, self-aligned bipolar structure with selectively deposited polysilicon emitter IEEE Transactions on Electron Devices ·Shih-Wei Sun, Nindy Ayu Pangestu, J.D. Hayden, Mr.Amit kumar yadav, J. T. Fitch, V. Kaushik	1992	1
16	A comparison of base current reversal and bipolar snapback in advanced n-p-n bipolar transistors IEEE Electron Device Letters ·J.D. Hayden, David C. Burnett, K. M. VENTURA	1991	20
17	Selective-Polysilicon Emitter, Self-Aligned Bipolar Structure for BiCMOS VLSI Applications Shih Wei Sun, Nindy Ayu Pangestu, J.D. Hayden, Mr.Amit kumar yadav, J. T. Fitch	1991	1
18	The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices IEEE Transactions on Electron Devices ·J.R. Pfiester, F.K. Baker, T.C. Mele, H.‐H. Tseng, P.J. Tobin, J.D. Hayden, James W. Miller, C.D. Gunderson, L.C. Parrillo	1990	151
19	Poly-gate sidewall oxidation induced submicrometer MOSFET degradation IEEE Electron Device Letters ·J.R. Pfiester, L.C. Parrillo, J.D. Hayden, Y.C. See, Peter Fejes	1989	15
20	Model for the channel-implanted enhancement-mode IGFET IEEE Transactions on Electron Devices ·Uday Kumar, J.D. Hayden, Carbajal Chirinos C	1986	4

About J.D. Hayden

J.D. Hayden is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Mechanics of Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 34 papers that have together received 326 indexed citations. Recurring topics across this work include Semiconductor materials and devices (31 papers), Advancements in Semiconductor Devices and Circuit Design (30 papers), Integrated Circuits and Semiconductor Failure Analysis (12 papers), Silicon Carbide Semiconductor Technologies (7 papers), Low-power high-performance VLSI design (5 papers), Electrostatic Discharge in Electronics (3 papers), Advancements in Photolithography Techniques (2 papers) and 3D IC and TSV technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (318 citations), Hardware and Architecture (13 citations), Ceramics and Composites (8 citations), Atomic and Molecular Physics, and Optics (29 citations) and Materials Chemistry (35 citations). J.D. Hayden has collaborated with scholars based in United States, Japan and Canada. Frequent co-authors include J.R. Pfiester, L.C. Parrillo, T.C. Mele, F.K. Baker, H.‐H. Tseng, P.J. Tobin, C.D. Gunderson, James W. Miller, David C. Burnett and Y.C. See. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEEE Journal of Solid-State Circuits and IEEE Transactions on Semiconductor Manufacturing.

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