A.C. Megdanis

501 total citations
20 papers, 320 citations indexed

About

A.C. Megdanis is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Signal Processing. According to data from OpenAlex, A.C. Megdanis has authored 20 papers receiving a total of 320 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 2 papers in Signal Processing. Recurrent topics in A.C. Megdanis's work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Photonic and Optical Devices (5 papers). A.C. Megdanis is often cited by papers focused on Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Photonic and Optical Devices (5 papers). A.C. Megdanis collaborates with scholars based in United States and Italy. A.C. Megdanis's co-authors include E.F. Crabbé, J.M.C. Stork, B.S. Meyerson, C. Stanis, D.L. Harame, J.H. Comfort, A. A. Bright, J.Y.-C. Sun, A.C. Warren and John D. Cressler and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

A.C. Megdanis

19 papers receiving 309 citations

Peers

A.C. Megdanis

EEE

AMPO

Jenn-Gang Chern United States

K. Kanazawa Japan

R. Kaunisto Finland

L.R. Hite United States

K. Matsuzawa Japan

S. Chaudhry United States

S. Inaba Japan

H. Hazama Japan

Yong Zhong Xiong Singapore

Mi-Chang Chang United States

Jenn-Gang Chern United States

A.C. Megdanis

420 ×1.4

EEE

45 ×0.6

AMPO

66 ×1.3

30 ×0.7

2 ×0.1

Citations per year, relative to A.C. Megdanis A.C. Megdanis (= 1×) peers Jenn-Gang Chern

Countries citing papers authored by A.C. Megdanis

Since Specialization

Citations

This map shows the geographic impact of A.C. Megdanis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.C. Megdanis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.C. Megdanis more than expected).

Fields of papers citing papers by A.C. Megdanis

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.C. Megdanis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.C. Megdanis. The network helps show where A.C. Megdanis may publish in the future.

Co-authorship network of co-authors of A.C. Megdanis

This figure shows the co-authorship network connecting the top 25 collaborators of A.C. Megdanis. A scholar is included among the top collaborators of A.C. Megdanis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.C. Megdanis. A.C. Megdanis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Davari, B., Charles W. Koburger, T. Furukawa, et al.. (2003). A variable-stress shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS. 92–95. 10 indexed citations

Weinberg, Z. A., G. Bronner, P.A. McFarland, et al.. (2002). Trench storage capacitors for high density DRAMs. 835–838. 5 indexed citations

Reynolds, Scott, et al.. (2002). 250 MHz digital FIR filters for PRML disk read channels. 80–81,. 2 indexed citations

Shahidi, G., D.D. Tang, B. Davari, et al.. (2002). A novel high-performance lateral bipolar on SOI. 663–666. 19 indexed citations

Warnock, J., John D. Cressler, P. Coane, et al.. (2002). A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay. 11. 956–958.

Pearson, D.J., et al.. (1995). Custom design of CMOS low-power high-performance digital signal-processing macro for hard-disk-drive applications. IBM Journal of Research and Development. 39(1.2). 83–91. 3 indexed citations

Pearson, D.J., Scott Reynolds, A.C. Megdanis, et al.. (1995). Digital FIR filters for high speed PRML disk read channels. IEEE Journal of Solid-State Circuits. 30(12). 1517–1523. 18 indexed citations

Crabbé, E.F., B.S. Meyerson, D.L. Harame, et al.. (1993). 113-GHz f/sub T/ graded-base SiGe HBT's. IEEE Transactions on Electron Devices. 40(11). 2100–2101. 22 indexed citations

Crabbé, E.F., J.H. Comfort, G.L. Patton, et al.. (1993). 113-GHz f_T graded-base SiGe HBTs. 22–23. 20 indexed citations

10.

Crabbé, E.F., J.H. Comfort, John D. Cressler, et al.. (1992). 73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters. IEEE Electron Device Letters. 13(5). 259–261. 51 indexed citations

11.

Cressler, John D., J. Warnock, P. Coane, et al.. (1992). A scaled 0.25- mu m bipolar technology using full e-beam lithography. IEEE Electron Device Letters. 13(5). 262–264. 9 indexed citations

12.

Burghartz, Joachim N., A.C. Megdanis, John D. Cressler, et al.. (1991). Novel in-situ doped polysilicon emitter process with buried diffusion source (BDS). IEEE Electron Device Letters. 12(12). 679–681. 14 indexed citations

13.

Harame, D.L., B.S. Meyerson, E.F. Crabbé, et al.. (1991). 55 Ghz Polysilicon-Emitter Graded Sige-Base Pnp Transistors. 71–72. 17 indexed citations

14.

Verdonckt-Vandebroek, S., E.F. Crabbé, B.S. Meyerson, et al.. (1991). Graded SiGe-Channel Modulation-Doped p-Mosfets. 105–106. 15 indexed citations

15.

Verdonckt-Vandebroek, S., E.F. Crabbé, B.S. Meyerson, et al.. (1991). High-mobility modulation-doped SiGe-channel p-MOSFETs. IEEE Electron Device Letters. 12(8). 447–449. 86 indexed citations

16.

Lii, Y. T., et al.. (1991). A Fully Planarized 0.25 /spl mu/m CMOS Technology. 83–84. 1 indexed citations

17.

Harame, D.L., J.M.C. Stork, B.S. Meyerson, et al.. (1990). SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process. 47–48. 10 indexed citations

18.

Dori, L., et al.. (1990). Sputtered tungsten for deep submicroncomplementary metal-oxide-semiconductor technology. Thin Solid Films. 193-194. 501–510. 7 indexed citations

19.

Angelucci, R., C. Y. Wong, J.Y.-C. Sun, et al.. (1987). Characteristics of Arsenic Doped Polycrystalline Silicon-Gate Capacitors After Rapid Thermal Processing. MRS Proceedings. 106. 2 indexed citations

20.

Arienzo, M., et al.. (1986). In situ arsenic-doped polysilicon for VLSI applications. IEEE Transactions on Electron Devices. 33(10). 1535–1538. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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