Yuan Taur

15.3k total citations · 4 hit papers
169 papers, 10.0k citations indexed

About

Yuan Taur is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Yuan Taur has authored 169 papers receiving a total of 10.0k indexed citations (citations by other indexed papers that have themselves been cited), including 157 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 10 papers in Biomedical Engineering. Recurrent topics in Yuan Taur's work include Advancements in Semiconductor Devices and Circuit Design (142 papers), Semiconductor materials and devices (140 papers) and Silicon Carbide Semiconductor Technologies (52 papers). Yuan Taur is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (142 papers), Semiconductor materials and devices (140 papers) and Silicon Carbide Semiconductor Technologies (52 papers). Yuan Taur collaborates with scholars based in United States, Taiwan and China. Yuan Taur's co-authors include T.H. Ning, H.‐S. Philip Wong, D.J. Frank, D. A. Buchanan, R.H. Dennard, S.-H. Lo, P. M. Solomon, E. Nowak, Bo Yu and Xiaowen Liang and has published in prestigious journals such as Journal of the American Chemical Society, Nano Letters and Applied Physics Letters.

In The Last Decade

Yuan Taur

159 papers receiving 9.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Fundamentals of Modern VLSI Devices

2009 1.3k citations Yuan Taur, T.H. Ning Cambridge University Press eBooks profile →
Device scaling limits of Si MOSFETs and their application dependencies

2001 1.1k citations D.J. Frank, R.H. Dennard et al. profile →
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

1997 634 citations Yuan Taur et al. IEEE Electron Device Letters profile →
CMOS scaling into the nanometer regime

1997 616 citations Yuan Taur, D.J. Frank et al. profile →

Peers

Countries citing papers authored by Yuan Taur

Since Specialization

Citations

This map shows the geographic impact of Yuan Taur's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuan Taur with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuan Taur more than expected).

Fields of papers citing papers by Yuan Taur

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuan Taur. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuan Taur. The network helps show where Yuan Taur may publish in the future.

Co-authorship network of co-authors of Yuan Taur

This figure shows the co-authorship network connecting the top 25 collaborators of Yuan Taur. A scholar is included among the top collaborators of Yuan Taur based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yuan Taur. Yuan Taur is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Modeling of Electrostatics and Currents in a Forward-Biased p-n Junction 2024 ·IEEE Transactions on Electron Devices ·(unknown), Yuan Taur	0
2	Modeling of Short-Channel Effects in DG MOSFETs: Green’s Function Method Versus Scale Length Model 2018 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), Ashutosh Nandi, Yuan Taur	22
3	Impact of carrier lifetime on Z 2 -FET operation 2017 ·IEEE Conference Proceedings ·(unknown), (unknown), Maryline Bawedin, J. Lacord, (unknown), (unknown), (unknown), Yuan Taur, (unknown)	2
4	A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors 2015 ·IEEE Transactions on Electron Devices ·Yuan Taur, Hanping Chen, Qian Xie, Jaesoo Ahn, Paul C. McIntyre, Dennis Lin, Abhitosh Vais, Dmitry Veksler	7
5	$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth 2009 ·IEEE Electron Device Letters ·Uttam Singisetti, Mark A. Wistey, (unknown), Ashish Baraskar, B.J. Thibeault, A. C. Gossard, M.J.W. Rodwell, Byungha Shin, (unknown), Paul C. McIntyre, Bo Yu, Yuan Yu, D. Wang, Yuan Taur, P.M. Asbeck, Yongju Lee	71
6	A Two-Dimensional Analytical Solution for Short-Channel Effects in Nanowire MOSFETs 2009 ·IEEE Transactions on Electron Devices ·Bo Yu, Yuan Yu, Jooyoung Song, Yuan Taur	45
7	Fundamentals of Modern VLSI Devices breakdown → 2009 ·Cambridge University Press eBooks ·Yuan Taur, T.H. Ning	1340
8	Scaling of Nanowire Transistors 2008 ·IEEE Transactions on Electron Devices ·Bo Yu, Lingquan Wang, Yuan Yu, P.M. Asbeck, Yuan Taur	118
9	Channel profile optimization and device design for low-power high-performance dynamic-threshold MOSFET 2002 ·C. Wann, F. Assaderaghi, R.H. Dennard, Chenming Hu, G. Shahidi, Yuan Taur	25
10	25 nm CMOS design considerations 2002 ·Yuan Taur, C. Wann, D.J. Frank	151
11	Asymmetry in effective-channel length of n- and p-MOSFETs 2002 ·(unknown), Yuan Taur, E.F. Crabbé	1
12	New polysilicon disposable sidewall process for sub-50 nm CMOS 2001 ·(unknown), D. Boyd, (unknown), J. J. Bucchignano, Jian Cai, K. Chan, H.I. Hanafi, P. Kozlowski, (unknown), R. Roy, Linqi Shi, E. Sikorski, M. Surendra, Shalom J. Wind, (unknown), Junghyo Yoon, (unknown), (unknown), Yuan Taur	1
13	Monte Carlo modeling of threshold variation due to dopant fluctuations 1999 ·D.J. Frank, Yuan Taur, M. Ieong, H.‐S. Philip Wong	139
14	Saturation transconductance of deep-submicron-channel MOSFETs 1993 ·Solid-State Electronics ·Yuan Taur, Chen-Hsuan Hsu, (unknown), R.A. Kiehl, B. Davari, G. Shahidi	13
15	A high-performance 0.5-&mu;m BiCMOS technology with 3.3-V CMOS devices 1990 ·E. Diane Johnson, Terence B. Hook, (unknown), Yuan Taur, (unknown), (unknown), S. Ramaswamy, (unknown), (unknown)	11
16	Study of boron penetration through thin oxide with p+-polysilicon gate 1989 ·Symposium on VLSI Technology ·J.Y.-C. Sun, C. Y. Wong, Yuan Taur, Cheng‐Hsiang Hsu	28
17	Doping of n+ and p+ polysilicon in a dual-gate CMOS process 1988 ·C. Y. Wong, J.Y.-C. Sun, Yuan Taur, (unknown), R. Angelucci, B. Davari	45
18	Submicron Tungsten Gate MOSFET with 10 nm Gate Oxide 1987 ·Symposium on VLSI Technology ·B. Davari, C. Y. Ting, K. Y. Ahn, S. Basavaiah, C.‐K. Hu, Yuan Taur, M.R. Wordeman, (unknown), L. Krusin‐Elbaum, (unknown), M.R. Polcari	6
19	0.5 μm CMOS Device Design and Characterization 1987 ·European Solid-State Device Research Conference ·H.I. Hanafi, M.R. Wordeman, (unknown), Yuan Taur, J.Y.-C. Sun, R.H. Dennard, D.S. Zicherman, (unknown), N. Haddad, (unknown), (unknown)	1
20	Conversion gain in a Josephson effect mixer 1974 ·Applied Physics Letters ·Yuan Taur, J. H. Claassen, P. L. Richards	47

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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