C. Y. Ting

1.4k total citations
32 papers, 1.1k citations indexed

About

C. Y. Ting is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials. According to data from OpenAlex, C. Y. Ting has authored 32 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 7 papers in Mechanics of Materials. Recurrent topics in C. Y. Ting's work include Semiconductor materials and interfaces (21 papers), Semiconductor materials and devices (14 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). C. Y. Ting is often cited by papers focused on Semiconductor materials and interfaces (21 papers), Semiconductor materials and devices (14 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). C. Y. Ting collaborates with scholars based in United States and Italy. C. Y. Ting's co-authors include M. Wittmer, F. M. d’Heurle, Subramanian S. Iyer, P. M. Fryer, E. A. Irene, L. Krusin‐Elbaum, Charles Y. Chen, K. N. Tu, K. Y. Ahn and J. J. Cuomo and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

C. Y. Ting

31 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Y. Ting United States	17	834	542	346	266	220	32	1.1k
Tohru Hara Japan	17	748 0.9×	338 0.6×	191 0.6×	262 1.0×	299 1.4×	110	992
Karen Holloway United States	9	769 0.9×	528 1.0×	309 0.9×	279 1.0×	507 2.3×	17	1.1k
E. K. Broadbent United States	15	551 0.7×	341 0.6×	256 0.7×	166 0.6×	224 1.0×	30	761
M-A. Nicolet United States	18	506 0.6×	429 0.8×	140 0.4×	255 1.0×	132 0.6×	27	827
J. O. Olowolafe United States	21	1.1k 1.3×	820 1.5×	357 1.0×	547 2.1×	419 1.9×	44	1.7k
P. M. Fryer United States	13	886 1.1×	430 0.8×	297 0.9×	219 0.8×	559 2.5×	20	1.1k
Brad J. Burrow United States	9	490 0.6×	234 0.4×	307 0.9×	134 0.5×	285 1.3×	12	668
T. C. Tisone United States	14	357 0.4×	294 0.5×	182 0.5×	292 1.1×	175 0.8×	33	777
E. Sakuma Poland	18	977 1.2×	255 0.5×	104 0.3×	275 1.0×	239 1.1×	37	1.2k
J. M. Molarius Finland	14	458 0.5×	130 0.2×	526 1.5×	392 1.5×	232 1.1×	46	816

Countries citing papers authored by C. Y. Ting

Since Specialization

Citations

This map shows the geographic impact of C. Y. Ting's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Y. Ting with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Y. Ting more than expected).

Fields of papers citing papers by C. Y. Ting

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Y. Ting. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Y. Ting. The network helps show where C. Y. Ting may publish in the future.

Co-authorship network of co-authors of C. Y. Ting

This figure shows the co-authorship network connecting the top 25 collaborators of C. Y. Ting. A scholar is included among the top collaborators of C. Y. Ting based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Y. Ting. C. Y. Ting is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Davari, B., C. Y. Ting, K. Y. Ahn, et al.. (1987). Submicron Tungsten Gate MOSFET with 10 nm Gate Oxide. Symposium on VLSI Technology. 61–62. 6 indexed citations

Taur, Yuan, B. Davari, D. Moy, J.Y.-C. Sun, & C. Y. Ting. (1987). Study of contact and shallow junction characteristics in submicron CMOS with self-aligned titanium silicide. IBM Journal of Research and Development. 31(6). 627–633. 7 indexed citations

Krusin‐Elbaum, L., J.Y.-C. Sun, & C. Y. Ting. (1987). On the resistivity of TiSi₂: The implication for low-temperature applications. IEEE Transactions on Electron Devices. 34(1). 58–63. 10 indexed citations

Wong, C. Y., et al.. (1986). Cross-sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus-doped polycrystalline silicon gate. Journal of Applied Physics. 59(8). 2773–2776. 13 indexed citations

Taur, Yuan, G. Hu, R.H. Dennard, et al.. (1985). A self-aligned 1-µm-channel CMOS technology with retrograde n-well and thin epitaxy. IEEE Transactions on Electron Devices. 32(2). 203–209. 36 indexed citations

Iyer, Subramanian S. & C. Y. Ting. (1984). Electromigration Study of the Al-Cu/Ti/Al-Cu System. 273–278. 6 indexed citations

Ting, C. Y.. (1984). Silicide for contacts and interconnects. 110–113. 14 indexed citations

Iyer, Shankar S. & C. Y. Ting. (1984). Electromigration lifetime sudies of submicrometer-linewidth Al-Cu conductors. IEEE Transactions on Electron Devices. 31(10). 1468–1471. 24 indexed citations

Ahn, K. Y., M. Wittmer, & C. Y. Ting. (1983). Investigation of Tin films reactively sputtered using a sputter gun. Thin Solid Films. 107(1). 45–54. 49 indexed citations

10.

d’Heurle, F. M., E. A. Irene, & C. Y. Ting. (1983). Oxidation of silicide thin films: TiSi2. Applied Physics Letters. 42(4). 361–363. 68 indexed citations

11.

Wittmer, M., C. Y. Ting, & K. N. Tu. (1983). Redistribution of As during Pd2Si formation: Electrical measurements. Journal of Applied Physics. 54(2). 699–705. 21 indexed citations

12.

Krusin‐Elbaum, L., M. Wittmer, C. Y. Ting, & J. J. Cuomo. (1983). ZrN diffusion barrier in aluminum metallization schemes. Thin Solid Films. 104(1-2). 81–87. 67 indexed citations

13.

Wittmer, M., C. Y. Ting, & K. N. Tu. (1983). Atomic motion of dopant during interfacial silicide formation. Thin Solid Films. 104(1-2). 191–195. 13 indexed citations

14.

Ting, C. Y., et al.. (1982). Controlled Collapse Reflow for Josephson Chip Bonding. Journal of The Electrochemical Society. 129(4). 859–864. 11 indexed citations

15.

Wittmer, M., C. Y. Ting, & K. N. Tu. (1982). Atomic Motion of Dopant During Interfacial Silicide Formation. MRS Proceedings. 18.

16.

Ting, C. Y. & M. Wittmer. (1982). The use of titanium-based contact barrier layers in silicon technology. Thin Solid Films. 96(4). 327–345. 135 indexed citations

17.

Krusin‐Elbaum, L., M. Wittmer, C. Y. Ting, & J. J. Cuomo. (1982). ZrN Diffusion Barrier in Aluminum Metallization Schemes. MRS Proceedings. 18. 1 indexed citations

18.

Ting, C. Y.. (1982). TiN formed by evaporation as a diffusion barrier between Al and Si. Journal of Vacuum Science and Technology. 21(1). 14–18. 145 indexed citations

19.

Wittmer, M., C. Y. Ting, Iwao Ohdomari, & K. N. Tu. (1982). Redistribution of As during Pd2Si formation: Ion channeling measurements. Journal of Applied Physics. 53(10). 6781–6787. 32 indexed citations

20.

Ting, C. Y., et al.. (1970). Current Crowding Effects at Aluminun-Silicon Contacts. Reliability physics. 121–126. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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