J.H. Comfort

2.6k citations
62 papers · 1.8k · 1 hit paper · h-index 22

Impact in

  • Electrical and Electronic Engineering top 2%
    • Advancements in Semiconductor Devices and Circuit Design
    • Semiconductor materials and devices
    • Radio Frequency Integrated Circuit Design
    • Silicon and Solar Cell Technologies
    • Thin-Film Transistor Technologies
    • Integrated Circuits and Semiconductor Failure Analysis
  • Atomic and Molecular Physics, and Optics top 5%
    • Semiconductor Quantum Structures and Devices
    • Semiconductor materials and interfaces

Papers in

  • Electrical and Electronic Engineering 62
    • Semiconductor materials and devices 44
    • Advancements in Semiconductor Devices and Circuit Design 37
    • Radio Frequency Integrated Circuit Design 17
    • Thin-Film Transistor Technologies 15
    • Silicon and Solar Cell Technologies 10
    • Silicon Carbide Semiconductor Technologies 7
  • Atomic and Molecular Physics, and Optics 17
    • Semiconductor Quantum Structures and Devices 10
Co-authors
E.F. Crabbé (33 shared papers)B.S. Meyerson (26 shared papers)D.L. Harame (17 shared papers)John D. Cressler (23 shared papers)J.M.C. Stork (34 shared papers)J.Y.-C. Sun (25 shared papers)R. Reif (10 shared papers)G.L. Patton (21 shared papers)
Journals
IEEE Electron Device Letters (12 papers)IEEE Transactions on Electron Devices (6 papers)Journal of Applied Physics (5 papers)Microelectronic Engineering (3 papers)Journal of Electronic Materials (2 papers)
Partner nations
United StatesItalyJapan

In The Last Decade

J.H. Comfort

61 papers receiving 1.7k citations

J.H. Comfort's Hit Papers

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors 1990 · 369 citations
3690+12+24Years since publication100200300
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

  • it has ≥500 total citations;
  • it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
  • it reaches the top citation threshold in at least one of its specific research topics.
  1. 1990 IEEE Electron Device Letters

Peers

J.H. Comfort
Comparison fields: 5 of 40
  • Electrical and Electronic Engineering 1.8k
  • Atomic and Molecular Physics, and Optics 537
  • Materials Chemistry 295
  • Biomedical Engineering 218
  • Computational Mechanics 85
Replace J.M.C. Stork with:
J.M.C. Stork United States
J.Y.-C. Sun United States
C. Claeys Belgium
G. Declerck Belgium
K.R. Hofmann Germany
D. Dutartre France
L. Forbes United States
H.L. Hughes United States
M. Y. Tsai United States
Tomoaki Kawamura Japan
J.H. Comfort relative to J.M.C. Stork United States J.M.C. Stork's profile →
Citations per field
00.5×1.5×
J.M.C. Stork · 1×
Citations per year

Countries citing papers authored by J.H. Comfort

Since Specialization
Citations

This map shows the geographic impact of J.H. Comfort's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.H. Comfort with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.H. Comfort more than expected).

Fields of papers citing papers by J.H. Comfort

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.H. Comfort. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.H. Comfort. The network helps show where J.H. Comfort may publish in the future.

Co-authors

The 25 scholars most cited alongside J.H. Comfort, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.H. Comfort Line = papers co-authored together J.H. Comfort links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 62 papers — load more, or switch the sort, to bring in the rest.

#Work
1
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
IEEE Electron Device Letters ·G.L. Patton, J.H. Comfort, B.S. Meyerson, E.F. Crabbé, G. Scilla, E. de Frésart, J.M.C. Stork, J.Y.-C. Sun, D.L. Harame, Joachim N. Burghartz
Hit paper breakdown →		1990369
2
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
IEEE Transactions on Electron Devices ·D.L. Harame, J.H. Comfort, John D. Cressler, E.F. Crabbé, J.Y.-C. Sun, B.S. Meyerson, T. Tice
1995274
3
Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
IEEE Transactions on Electron Devices ·D.L. Harame, J.H. Comfort, John D. Cressler, E.F. Crabbé, J.Y.-C. Sun, B.S. Meyerson, T. Tice
1995162
4
On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations
IEEE Transactions on Electron Devices ·John D. Cressler, J.H. Comfort, E.F. Crabbé, G.L. Patton, J.M.C. Stork, J.Y.-C. Sun, B.S. Meyerson
199379
5
Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial silicon deposition. I. Process considerations
Journal of Applied Physics ·J.H. Comfort, L. M. Garverick, R. Reif
198769
6
Chemical Vapor Deposition of Epitaxial Silicon from Silane at Low Temperatures: I . Very Low Pressure Deposition
Journal of The Electrochemical Society ·J.H. Comfort, R. Reif
198967
7
A room temperature 0.1 μm CMOS on SOI
IEEE Transactions on Electron Devices ·G. Shahidi, Clint Anderson, B.A. Chappell, T.I. Chappell, J.H. Comfort, B. Davari, R.H. Dennard, R. Franch, P.A. McFarland, J.S. Neely, T.H. Ning, M.R. Polcari, J.D. Warnock
199464
8
73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters
IEEE Electron Device Letters ·E.F. Crabbé, J.H. Comfort, W. Lee, John D. Cressler, B.S. Meyerson, A.C. Megdanis, J.Y.-C. Sun, J.M.C. Stork
199251
9
On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues
IEEE Transactions on Electron Devices ·John D. Cressler, E.F. Crabbé, J.H. Comfort, J.M.C. Stork, J.Y.-C. Sun
199343
10
Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II. Epitaxial quality
Journal of Applied Physics ·L. M. Garverick, J.H. Comfort, Tri‐Rung Yew, R. Reif, F. A. Baiocchi, H. S. Luftman
198742
11
The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition
Journal of Applied Physics ·S. R. Stiffler, J.H. Comfort, C. Stanis, D.L. Harame, E. de Frésart, B.S. Meyerson
199135
12
CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications
IBM Journal of Research and Development ·G. Shahidi, J.D. Warnock, J.H. Comfort, S.E. Fischer, P.A. McFarland, A. Acovic, T.I. Chappell, B.A. Chappell, T.H. Ning, C.J. Anderson, R.H. Dennard, J.Y.-C. Sun, M.R. Polcari, B. Davari
199531
13
Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors
IEEE Electron Device Letters ·John D. Cressler, J.H. Comfort, E.F. Crabbé, G.L. Patton, W. Lee, J.Y.-C. Sun, J.M.C. Stork, B.S. Meyerson
199130
14
Current gain rolloff in graded-base SiGe heterojunction bipolar transistors
IEEE Electron Device Letters ·E.F. Crabbé, John D. Cressler, G.L. Patton, J.M.C. Stork, J.H. Comfort, J.Y.-C. Sun
199329
15
63-75 GHz fT SiGe-base heterojunction bipolar technology
G.L. Patton, J.H. Comfort, B.S. Meyerson, E.F. Crabbé, G. Scilla, E. de Frésart, J.M.C. Stork, J.Y.-C. Sun, D.L. Harame, Joachim N. Burghartz
199026
16
Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology
IEEE Electron Device Letters ·Joachim N. Burghartz, J.H. Comfort, G.L. Patton, B.S. Meyerson, J.Y.-C. Sun, J.M.C. Stork, Sebastian Mäder, C. Stanis, G. Scilla, B.J. Ginsberg
199025
17
An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation
IEEE Electron Device Letters ·John D. Cressler, E.F. Crabbé, J.H. Comfort, J.Y.-C. Sun, J.M.C. Stork
199425
18
High-performance devices for a 0.15- mu m CMOS technology
IEEE Electron Device Letters ·G. Shahidi, J. Warnock, S.E. Fischer, P.A. McFarland, A. Acovic, S. Subbanna, E. Ganin, E.F. Crabbé, J.H. Comfort, J.Y.-C. Sun, T.H. Ning, B. Davari
199325
19
The implementation of a reduced-field profile design for high-performance bipolar transistors
IEEE Electron Device Letters ·P.-F. Lu, J.H. Comfort, D.D. Tang, B.S. Meyerson, J.Y.-C. Sun
199023
20
113-GHz f/sub T/ graded-base SiGe HBT's
IEEE Transactions on Electron Devices ·E.F. Crabbé, B.S. Meyerson, D.L. Harame, J.M.C. Stork, A.C. Megdanis, J. Cotte, J. O. Chu, M. Gilbert, C. Stanis, J.H. Comfort, G.L. Patton, S. Subbanna
199322

About J.H. Comfort

J.H. Comfort is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Condensed Matter Physics, having authored 62 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers), Radio Frequency Integrated Circuit Design (17 papers), Thin-Film Transistor Technologies (15 papers), Semiconductor Quantum Structures and Devices (10 papers), Silicon and Solar Cell Technologies (10 papers), Silicon Nanostructures and Photoluminescence (8 papers) and Silicon Carbide Semiconductor Technologies (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.8k citations), Atomic and Molecular Physics, and Optics (537 citations), Materials Chemistry (295 citations), Biomedical Engineering (218 citations) and Computational Mechanics (85 citations). J.H. Comfort has collaborated with scholars based in United States, Italy and Japan. Frequent co-authors include E.F. Crabbé, B.S. Meyerson, D.L. Harame, John D. Cressler, J.M.C. Stork, J.Y.-C. Sun, R. Reif, G.L. Patton, J.Y.-C. Sun and Joachim N. Burghartz. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics, Microelectronic Engineering and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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