T.-C. Chen

406 total citations
14 papers, 302 citations indexed

About

T.-C. Chen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Infectious Diseases. According to data from OpenAlex, T.-C. Chen has authored 14 papers receiving a total of 302 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 2 papers in Materials Chemistry and 0 papers in Infectious Diseases. Recurrent topics in T.-C. Chen's work include Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Silicon and Solar Cell Technologies (3 papers). T.-C. Chen is often cited by papers focused on Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Silicon and Solar Cell Technologies (3 papers). T.-C. Chen collaborates with scholars based in United States and China. T.-C. Chen's co-authors include P.-F. Lu, G.P. Li, D.D. Tang, C.T. Chuang, John D. Cressler, T.H. Ning, J. Warnock, K.A. Jenkins, J.Y.-C. Sun and D.L. Harame and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Le Journal de Physique Colloques.

In The Last Decade

T.-C. Chen

12 papers receiving 288 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T.-C. Chen United States	10	299	57	33	25	8	14	302
F. Assad United States	5	284 0.9×	47 0.8×	45 1.4×	28 1.1×	12 1.5×	8	298
R.J.P. Lander Belgium	11	300 1.0×	55 1.0×	43 1.3×	16 0.6×	6 0.8×	24	312
P.-F. Lu United States	10	304 1.0×	48 0.8×	27 0.8×	11 0.4×	7 0.9×	32	307
B. Winstead United States	9	341 1.1×	86 1.5×	42 1.3×	30 1.2×	4 0.5×	24	358
A. Hamada Japan	8	283 0.9×	31 0.5×	43 1.3×	20 0.8×	4 0.5×	18	306
T.J. Krutsick United States	5	455 1.5×	39 0.7×	60 1.8×	21 0.8×	7 0.9×	8	462
Hitoshi Sumida Japan	12	297 1.0×	45 0.8×	19 0.6×	31 1.2×	16 2.0×	46	313
H. van Meer Belgium	10	444 1.5×	61 1.1×	54 1.6×	18 0.7×	10 1.3×	41	452
J.S. Duster United States	11	364 1.2×	33 0.6×	48 1.5×	11 0.4×	10 1.3×	26	374
L. Lanzerotti United States	10	328 1.1×	81 1.4×	21 0.6×	15 0.6×	10 1.3×	23	335

Countries citing papers authored by T.-C. Chen

Since Specialization

Citations

This map shows the geographic impact of T.-C. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.-C. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.-C. Chen more than expected).

Fields of papers citing papers by T.-C. Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.-C. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.-C. Chen. The network helps show where T.-C. Chen may publish in the future.

Co-authorship network of co-authors of T.-C. Chen

This figure shows the co-authorship network connecting the top 25 collaborators of T.-C. Chen. A scholar is included among the top collaborators of T.-C. Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.-C. Chen. T.-C. Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

14 of 14 papers shown

Chuang, C.T., et al.. (2003). A 23 ps/2.1 mW ECL gate. sc 17. 224–225.

Cressler, John D., T.-C. Chen, J.D. Warnock, & D.D. Tang. (2003). Sub-100 ps silicon bipolar ECL circuit operation at liquid nitrogen temperatures. 27. 156–159.

Warnock, J., John D. Cressler, K.A. Jenkins, et al.. (1990). 50-GHz self-aligned silicon bipolar transistors with ion-implanted base profiles. IEEE Electron Device Letters. 11(10). 475–477. 32 indexed citations

Cressler, John D., T.-C. Chen, J.D. Warnock, D.D. Tang, & E.S. Yang. (1990). Scaling the silicon bipolar transistor for sub-100-ps ECL circuit operation at liquid nitrogen temperature. IEEE Transactions on Electron Devices. 37(3). 680–691. 10 indexed citations

Tang, D.D., T.-C. Chen, C.T. Chuang, et al.. (1989). The design and electrical characteristics of high-performance single-poly ion-implanted bipolar transistors. IEEE Transactions on Electron Devices. 36(9). 1703–1710. 11 indexed citations

Chen, T.-C., John D. Cressler, J. Warnock, et al.. (1989). A submicrometer high-performance bipolar technology. IEEE Electron Device Letters. 10(8). 364–366. 37 indexed citations

Lu, P.-F., et al.. (1989). Modeling of currents in a vertical p-n-p transistor with extremely shallow emitter. IEEE Electron Device Letters. 10(5). 232–235. 9 indexed citations

Lu, P.-F. & T.-C. Chen. (1989). Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors. IEEE Transactions on Electron Devices. 36(6). 1182–1188. 81 indexed citations

Chen, T.-C., C.T. Chuang, D. Wendel, et al.. (1989). Sub-300-ps CBL circuits. IEEE Electron Device Letters. 10(11). 484–486. 11 indexed citations

10.

Li, G.P., et al.. (1988). Identification and implication of a perimeter tunneling current component in advanced self-aligned bipolar transistors. IEEE Transactions on Electron Devices. 35(1). 89–95. 52 indexed citations

11.

Li, G.P., C.T. Chuang, T.-C. Chen, & T.H. Ning. (1988). On the narrow-emitter effect of advanced shallow-profile bipolar transistors. IEEE Transactions on Electron Devices. 35(11). 1942–1950. 24 indexed citations

12.

Burghartz, Joachim N., et al.. (1988). Selective epitaxy base transistor (SEBT). IEEE Electron Device Letters. 9(5). 259–261. 20 indexed citations

13.

Burghartz, Joachim N., et al.. (1988). SELECTIVE EPITAXY BASE FOR BIPOLAR TRANSISTORS. Le Journal de Physique Colloques. 49(C4). C4–367. 2 indexed citations

14.

Chen, T.-C., et al.. (1988). An advanced bipolar transistor with self-aligned ion-planted base and W/poly emitter. IEEE Transactions on Electron Devices. 35(8). 1322–1327. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact