C. Stanis

820 total citations
37 papers, 587 citations indexed

About

C. Stanis is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, C. Stanis has authored 37 papers receiving a total of 587 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in C. Stanis's work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Semiconductor Quantum Structures and Devices (9 papers). C. Stanis is often cited by papers focused on Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Semiconductor Quantum Structures and Devices (9 papers). C. Stanis collaborates with scholars based in United States, France and Switzerland. C. Stanis's co-authors include B.S. Meyerson, Joachim N. Burghartz, D.L. Harame, J.M.C. Stork, J.Y.-C. Sun, J.H. Comfort, E.F. Crabbé, A.C. Megdanis, Sebastian Mäder and S. R. Stiffler and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C. Stanis

36 papers receiving 571 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Stanis United States 15 535 200 98 86 72 37 587
M. Heitzmann France 10 323 0.6× 205 1.0× 34 0.3× 66 0.8× 90 1.3× 38 393
Satyavolu S. Papa Rao United States 9 213 0.4× 152 0.8× 37 0.4× 58 0.7× 122 1.7× 30 301
R. A. Donaton Belgium 11 275 0.5× 244 1.2× 47 0.5× 71 0.8× 36 0.5× 35 337
A. Lahav Israel 12 335 0.6× 321 1.6× 35 0.4× 95 1.1× 36 0.5× 16 436
Véronique Soulière France 11 312 0.6× 153 0.8× 68 0.7× 122 1.4× 35 0.5× 74 388
L. B. Glebov United States 10 213 0.4× 211 1.1× 74 0.8× 73 0.8× 42 0.6× 37 392
A. Domenicucci United States 13 506 0.9× 148 0.7× 256 2.6× 58 0.7× 64 0.9× 37 571
Carey M. Tanner United States 5 293 0.5× 145 0.7× 78 0.8× 124 1.4× 113 1.6× 8 366
Yasuhiko Nakayama Japan 12 313 0.6× 329 1.6× 51 0.5× 150 1.7× 42 0.6× 39 433
Aliekber Aktağ Türkiye 12 255 0.5× 170 0.8× 34 0.3× 154 1.8× 27 0.4× 22 344

Countries citing papers authored by C. Stanis

Since Specialization
Citations

This map shows the geographic impact of C. Stanis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Stanis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Stanis more than expected).

Fields of papers citing papers by C. Stanis

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Stanis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Stanis. The network helps show where C. Stanis may publish in the future.

Co-authorship network of co-authors of C. Stanis

This figure shows the co-authorship network connecting the top 25 collaborators of C. Stanis. A scholar is included among the top collaborators of C. Stanis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Stanis. C. Stanis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Harame, D.L., J.M.C. Stork, B.S. Meyerson, et al.. (2002). 30 GHz polysilicon-emitter and single-crystal-emitter graded SiGe-base PNP transistors. 33–36. 1 indexed citations
2.
Schonenberg, K., et al.. (1997). The stability of Si1−xGex strained layers on small-area trench-isolated silicon. Journal of materials research/Pratt's guide to venture capital sources. 12(2). 364–370. 6 indexed citations
3.
Heath, James R., R. Stanley Williams, J. J. Shiang, et al.. (1996). Spatially Confined Chemistry:  Fabrication of Ge Quantum Dot Arrays. The Journal of Physical Chemistry. 100(8). 3144–3149. 32 indexed citations
4.
Feenstra, R. M., M. A. Lutz, Frank Stern, et al.. (1995). Roughness analysis of Si/SiGe heterostructures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(4). 1608–1612. 49 indexed citations
5.
Zaslavsky, A., K. R. Milkove, K. Chan, et al.. (1994). Fabrication of three-terminal resonant tunneling devices in silicon-based material. Applied Physics Letters. 64(13). 1699–1701. 5 indexed citations
6.
Burghartz, Joachim N., et al.. (1994). A low-capacitance bipolar/BiCMOS isolation technology. I. Concept, fabrication process, and characterization. IEEE Transactions on Electron Devices. 41(8). 1379–1387. 6 indexed citations
7.
Burghartz, Joachim N., K.A. Jenkins, Detlev Grützmacher, T. O. Sedgwick, & C. Stanis. (1994). High-performance emitter-up/down SiGe HBT's. IEEE Electron Device Letters. 15(9). 360–362. 14 indexed citations
8.
Hu, Chunhua, et al.. (1993). Electromigration in two-level bamboo grain structure Al(Cu)/W interconnections. Materials Chemistry and Physics. 35(1). 95–98. 7 indexed citations
9.
Smith, D. A., M. B. Small, & C. Stanis. (1993). Electron microscopy of the grain structure of metal films and lines. Ultramicroscopy. 51(1-4). 328–338. 4 indexed citations
10.
Crabbé, E.F., B.S. Meyerson, D.L. Harame, et al.. (1993). 113-GHz f/sub T/ graded-base SiGe HBT's. IEEE Transactions on Electron Devices. 40(11). 2100–2101. 22 indexed citations
11.
Burghartz, Joachim N., J.Y.-C. Sun, C. Stanis, Sebastian Mäder, & J.D. Warnock. (1992). Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors. IEEE Transactions on Electron Devices. 39(6). 1477–1489. 34 indexed citations
12.
Burghartz, Joachim N., J. Warnock, John D. Cressler, et al.. (1992). Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique. Microelectronic Engineering. 19(1-4). 531–534. 1 indexed citations
13.
Stanis, C., Ο. Thomas, J. Cotte, et al.. (1992). Dopant diffusion in silicides: Effect of diffusion paths. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 10(4). 907–911. 5 indexed citations
14.
Burghartz, Joachim N., John D. Cressler, K.A. Jenkins, et al.. (1991). Device design issues for a high-performance technology with Si or SiGe epitaxial base. Microelectronic Engineering. 15(1-4). 11–14. 5 indexed citations
15.
Burghartz, Joachim N., A.C. Megdanis, John D. Cressler, et al.. (1991). Novel in-situ doped polysilicon emitter process with buried diffusion source (BDS). IEEE Electron Device Letters. 12(12). 679–681. 14 indexed citations
16.
Harame, D.L., B.S. Meyerson, E.F. Crabbé, et al.. (1991). 55 Ghz Polysilicon-Emitter Graded Sige-Base Pnp Transistors. 71–72. 17 indexed citations
17.
Warnock, J., John D. Cressler, K.A. Jenkins, et al.. (1991). High-performance bipolar technology for improved ECL power delay. IEEE Electron Device Letters. 12(6). 315–317. 9 indexed citations
18.
Burghartz, Joachim N., J.H. Comfort, G.L. Patton, et al.. (1990). Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology. IEEE Electron Device Letters. 11(7). 288–290. 25 indexed citations
19.
Harame, D.L., J.M.C. Stork, B.S. Meyerson, et al.. (1990). SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process. 47–48. 10 indexed citations
20.
Burghartz, Joachim N., et al.. (1990). Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors. 55–56. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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