D. Moy

699 total citations
31 papers, 395 citations indexed

About

D. Moy is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, D. Moy has authored 31 papers receiving a total of 395 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 4 papers in Biomedical Engineering. Recurrent topics in D. Moy's work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). D. Moy is often cited by papers focused on Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). D. Moy collaborates with scholars based in United States, Sweden and India. D. Moy's co-authors include Yuan Taur, B. Davari, J.Y.-C. Sun, M.R. Wordeman, T. Kirihata, M.R. Polcari, Subramanian S. Iyer, Karen Petrillo, Ching-Fang Hsu and Wei‐Hsu Chang and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

D. Moy

29 papers receiving 376 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Moy United States	11	372	88	47	38	27	31	395
H. Oyamatsu Japan	9	278 0.7×	115 1.3×	45 1.0×	13 0.3×	24 0.9×	26	316
Jeffrey B. Johnson United States	12	415 1.1×	41 0.5×	32 0.7×	41 1.1×	21 0.8×	49	431
C. Kothandaraman United States	12	416 1.1×	97 1.1×	90 1.9×	47 1.2×	80 3.0×	28	460
D. Gogl Germany	9	268 0.7×	152 1.7×	16 0.3×	31 0.8×	48 1.8×	13	328
L. Ciampolini France	9	321 0.9×	115 1.3×	24 0.5×	56 1.5×	55 2.0×	35	361
N. Planes France	17	781 2.1×	49 0.6×	51 1.1×	56 1.5×	39 1.4×	56	804
S. Ramey United States	15	684 1.8×	115 1.3×	44 0.9×	60 1.6×	45 1.7×	50	732
Jenn-Gang Chern United States	7	420 1.1×	45 0.5×	23 0.5×	66 1.7×	30 1.1×	13	436
M. Inuishi Japan	13	539 1.4×	75 0.9×	64 1.4×	32 0.8×	31 1.1×	77	556
S. M. Alam United States	11	271 0.7×	163 1.9×	24 0.5×	13 0.3×	31 1.1×	16	334

Countries citing papers authored by D. Moy

Since Specialization

Citations

This map shows the geographic impact of D. Moy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Moy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Moy more than expected).

Fields of papers citing papers by D. Moy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Moy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Moy. The network helps show where D. Moy may publish in the future.

Co-authorship network of co-authors of D. Moy

This figure shows the co-authorship network connecting the top 25 collaborators of D. Moy. A scholar is included among the top collaborators of D. Moy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Moy. D. Moy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Justison, Patrick, Martin Gall, Yusheng Bian, et al.. (2023). Self-aligned Fiber Attach on Monolithic Silicon Photonic Chips: Moisture Effect and Hermetic Seal. Th1A.5–Th1A.5.

Moy, D., Jiang Liu, Norman Robson, et al.. (2019). Design Optimization and Modeling of Charge Trap Transistors (CTTs) in 14 nm FinFET Technologies. IEEE Electron Device Letters. 40(7). 1100–1103. 12 indexed citations

Moy, D., et al.. (2019). Turning Logic Transistors into Secure, Multi-Time Programmable, Embedded Non-Volatile Memory Elements for 14 nm FINFET Technologies and Beyond. T116–T117. 6 indexed citations

Yin, Ming, et al.. (2016). 80Kb 10ns read cycle logic Embedded High-K charge trap Multi-Time-Programmable Memory scalable to 14nm FIN with no added process complexity. 1–2. 10 indexed citations

Safran, John, C. Kothandaraman, Xiang Chen, et al.. (2007). A Compact eFUSE Programmable Array Memory for SOI CMOS. 72–73. 20 indexed citations

Safran, John, C. Kothandaraman, Xiang Chen, et al.. (2007). Electrically Programmable Fuse (eFUSE): From Memory Redundancy to Autonomic Chips. 53 indexed citations

Moy, D., et al.. (2007). Reliability investigation of NiPtSi electrical fuse with different programming mechanisms. 90–93. 1 indexed citations

Leobandung, E., M. Sherony, R. Schulz, et al.. (2003). High performance 0.18 μm SOI CMOS technology. 679–682. 9 indexed citations

Davari, B., Wei‐Hsu Chang, M.R. Wordeman, et al.. (2003). A high performance 0.25 mu m CMOS technology. 34. 56–59. 5 indexed citations

10.

Taur, Y., Shalom J. Wind, Y. J. Mii, et al.. (2002). High performance 0.1 μm CMOS devices with 1.5 V power supply. 127–130. 24 indexed citations

11.

Kwok, Thomas, et al.. (2002). Electromigration in a two-level Al-Cu interconnection with W studs. 106–112. 5 indexed citations

12.

Ferguson, Richard A., Christopher P. Ausschnitt, I‐Jy Chang, et al.. (2002). Optimization of resolution-enhanced photolithography for a 256 Mb DRAM cell. 27. 89–90. 1 indexed citations

13.

Hashimoto, Kohji, et al.. (1994). The Application of Deep UV Phase Shifted-Single Layer Halftone Reticles to 256 Mbit Dynamic Random Access Memory Cell Patterns. Japanese Journal of Applied Physics. 33(12S). 6823–6823. 5 indexed citations

14.

Davari, B., Wei‐Hsu Chang, Karen Petrillo, et al.. (1992). A high-performance 0.25- mu m CMOS technology. II. Technology. IEEE Transactions on Electron Devices. 39(4). 967–975. 85 indexed citations

15.

Moy, D., David E. Seeger, J. P. Silverman, et al.. (1990). A 0.5 &mu;m fully scaled two-level metal fully planarized interconnect structure fabricated with X-ray lithography. 9–10. 2 indexed citations

16.

Moy, D., et al.. (1989). Novel self-aligned W/TiN/TiSi2 contact structure for very shallow junctions and interconnections. Applied Physics Letters. 54(17). 1672–1674. 13 indexed citations

17.

Hörnström, Sven Erik, D. Moy, A. Charaı̈, et al.. (1989). TiN formed by ion beam nitriding of TiSi2. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 7(3). 565–569. 3 indexed citations

18.

Sai-Halasz, G.A., M.R. Wordeman, D. P. Kern, et al.. (1988). Inverter performance of deep-submicrometer MOSFETs. IEEE Electron Device Letters. 9(12). 633–635. 11 indexed citations

19.

Taur, Yuan, B. Davari, D. Moy, J.Y.-C. Sun, & C. Y. Ting. (1987). Study of contact and shallow junction characteristics in submicron CMOS with self-aligned titanium silicide. IBM Journal of Research and Development. 31(6). 627–633. 7 indexed citations

20.

Sai-Halasz, G.A., M.R. Wordeman, D. P. Kern, et al.. (1987). Experimental technology and characterization of self-aligned 0.1&#181;m-gate-length low-temperature operation NMOS devices. 397–400. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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