A. Acovic

581 citations

35 papers · 411 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Radiation Effects in Electronics
- Electrostatic Discharge in Electronics
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in ⓘ

Electrical and Electronic Engineering 35
- Advancements in Semiconductor Devices and Circuit Design 29
- Semiconductor materials and devices 28
- Integrated Circuits and Semiconductor Failure Analysis 19
- Low-power high-performance VLSI design 7
- Electrostatic Discharge in Electronics 3
- Ferroelectric and Negative Capacitance Devices 2
Hardware and Architecture 1

Co-authors: Giuseppe La Rosa (2 shared papers)E.F. Crabbé (3 shared papers)M. Ilegems (2 shared papers)M. Dutoit (2 shared papers)F Guarin (1 shared paper)Stewart E. Rauch (2 shared papers)B. Davari (6 shared papers)Chen-Hsuan Hsu (2 shared papers)
Journals: IEEE Electron Device Letters (5 papers)Solid-State Electronics (3 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (2 papers)Microelectronics Reliability (2 papers)
Partner nations: United States Switzerland Greece

In The Last Decade

A. Acovic

31 papers receiving 385 citations

Peers

Countries citing papers authored by A. Acovic

Since Specialization

Citations

This map shows the geographic impact of A. Acovic's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Acovic with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Acovic more than expected).

Fields of papers citing papers by A. Acovic

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Acovic. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Acovic. The network helps show where A. Acovic may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Acovic, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Acovic Line = papers co-authored together A. Acovic links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 35 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A review of hot-carrier degradation mechanisms in MOSFETs Microelectronics Reliability ·A. Acovic, Giuseppe La Rosa, Yuan-Chen Sun	1996	81
2	NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies Giuseppe La Rosa, F Guarin, Stewart E. Rauch, A. Acovic, J. Lukaitis, E.F. Crabbé	2002	76
3	CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications IBM Journal of Research and Development ·G. Shahidi, J.D. Warnock, J.H. Comfort, S.E. Fischer, P.A. McFarland, A. Acovic, T.I. Chappell, B.A. Chappell, T.H. Ning, C.J. Anderson, R.H. Dennard, J.Y.-C. Sun, M.R. Polcari, B. Davari	1995	31
4	Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel current IEEE Transactions on Electron Devices ·A. Acovic, M. Dutoit, M. Ilegems	1990	29
5	High-performance devices for a 0.15- mu m CMOS technology IEEE Electron Device Letters ·G. Shahidi, J. Warnock, S.E. Fischer, P.A. McFarland, A. Acovic, S. Subbanna, E. Ganin, E.F. Crabbé, J.H. Comfort, J.Y.-C. Sun, T.H. Ning, B. Davari	1993	25
6	Effects of X-ray irradiation on GIDL in MOSFETs IEEE Electron Device Letters ·A. Acovic, Ching-Fang Hsu, L. C. Hsia, A. Balasiński, T.P. Ma	1992	19
7	Optimized silicon-rich oxide (SRO) deposition process for 5 V only flash EEPROM applications IEEE Electron Device Letters ·L. Dori, A. Acovic, D. J. DiMaria, Chen-Hsuan Hsu	1993	19
8	A High Speed, Low Power P-Channel Flash EEPROM Using Silicon Rich Oxide as Tunneling Dielectric Chih-Wei Hsu, A. Acovic, L. Dori, Billy Wu, T. Lii, D. Quinlan, D. J. DiMaria, Y. Taur, M.R. Wordeman, Ning Tang	1992	17
9	Use of scanning capacitance microscopy for controlling wafer processing Microelectronics Reliability ·O. Jeandupeux, Vittorio Marsico, A. Acovic, P. Fazan, Harald Brune, Klaus Kern	2002	14
10	Boron redistribution in arsenic-implanted silicon and short-channel effects in metal–oxide–semiconductor field effect transistors Applied Physics Letters ·D. K. Sadana, A. Acovic, B. Davari, Detlev Grützmacher, H.I. Hanafi, F. Cardone	1992	14
11	Experimental 0.1 mu m p-channel MOSFET with p/sup +/-polysilicon gate on 35 AA gate oxide IEEE Electron Device Letters ·Yuan Taur, Sidney Cohen, Shalom J. Wind, T. Lii, Chen-Hsuan Hsu, D. Quinlan, Chun-Yen Chang, D. A. Buchanan, P. Agnello, Y. J. Mii, C. M. Reeves, A. Acovic, V. P. Kesan	1993	13
12	Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection Ernest Y. Wu, S.-H. Lo, W.W. Abadeer, A. Acovic, D. A. Buchanan, Toshiyuki Furukawa, D. Brochu, Roger Dufresne	2002	9
13	A study of the increased effects of hot-carrier stress on NMOSFETs at low temperature IEEE Transactions on Electron Devices ·A. Acovic, M. Dutoit, M. Ilegems	1989	9
14	Fowler-Nordheim tunneling of carriers in MOS transistors: Two-dimensional simulation of gate current employing FIELDAY Solid-State Electronics ·S. Noor Mohammad, Giovanni Fiorenza, A. Acovic, Jeffrey B. Johnson, R.L. Carter	1995	7
15	Monitoring hot-carrier degradation in SOI MOSFETs by hot-carrier luminescence techniques IEEE Transactions on Electron Devices ·L. Selmi, M. Pavesi, H.‐S. Philip Wong, A. Acovic, E. Sangiorgi	1998	7
16	Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide Solid-State Electronics ·A. Acovic, Ching-Fang Hsu, L. C. Hsia, J. Aitken	1993	6
17	Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Matthias Bucher, Aristeidis Nikolaou, Nikolaos Mavredakis, Nikolaos Makris, Mathieu Coustans, J. Lolivier, P. Habaš, A. Acovic, René Meyer	2017	6
18	A high-performance 0.08 μm CMOS L.T. Su, S. Subbanna, E.F. Crabbé, P. Agnello, E. Nowak, R. Schulz, Stewart E. Rauch, H. Ng, Thomas H. Newman, Anupama Ray, M. Hargrove, A. Acovic, J. Snare, S. Crowder, B. Chen, J.Y.-C. Sun, B. Davari	2002	6
19	Chemical vapor deposition of rough-morphology silicon films over a broad temperature range Applied Physics Letters ·S. S. Dana, M. Anderle, Gary W. Rubloff, A. Acovic	1993	4
20	A novel borderless contact/interconnect technology using aluminum oxide etch stop for high performance SRAM and logic S. Subbanna, D.L. Harame, B.A. Chappell, J.H. Comfort, B. Davari, R. Franch, D. A. Danner, A. Acovic, S. Brodsky, J. Gilbreth, Dale N. Robertson, J. Malinowski, T. Lii, G. Shahidi	2002	3

About A. Acovic

A. Acovic is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Electronic, Optical and Magnetic Materials, Biomedical Engineering and Atomic and Molecular Physics, and Optics, having authored 35 papers that have together received 411 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (29 papers), Semiconductor materials and devices (28 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers), Low-power high-performance VLSI design (7 papers), Electrostatic Discharge in Electronics (3 papers), Analog and Mixed-Signal Circuit Design (2 papers), Copper Interconnects and Reliability (2 papers) and Ferroelectric and Negative Capacitance Devices (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (402 citations), Atomic and Molecular Physics, and Optics (45 citations), Hardware and Architecture (8 citations), Materials Chemistry (41 citations) and Biomedical Engineering (31 citations). A. Acovic has collaborated with scholars based in United States, Switzerland and Greece. Frequent co-authors include Giuseppe La Rosa, E.F. Crabbé, M. Ilegems, M. Dutoit, F Guarin, Stewart E. Rauch, B. Davari, Chen-Hsuan Hsu, Ching-Fang Hsu and D. J. DiMaria. Their work appears in journals such as IEEE Electron Device Letters, Solid-State Electronics, IEEE Transactions on Electron Devices, Applied Physics Letters and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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