A. Acovic

581 total citations
35 papers, 411 citations indexed

About

A. Acovic is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Acovic has authored 35 papers receiving a total of 411 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 4 papers in Biomedical Engineering and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Acovic's work include Advancements in Semiconductor Devices and Circuit Design (29 papers), Semiconductor materials and devices (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). A. Acovic is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (29 papers), Semiconductor materials and devices (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). A. Acovic collaborates with scholars based in United States, Switzerland and Greece. A. Acovic's co-authors include Giuseppe La Rosa, E.F. Crabbé, Stewart E. Rauch, F Guarin, M. Ilegems, M. Dutoit, B. Davari, Ching-Fang Hsu, Chen-Hsuan Hsu and D. J. DiMaria and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

A. Acovic

31 papers receiving 385 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Acovic United States 11 402 45 41 31 12 35 411
K. Matsuzawa Japan 10 357 0.9× 86 1.9× 34 0.8× 41 1.3× 9 0.8× 42 388
H. Hazama Japan 10 302 0.8× 59 1.3× 35 0.9× 23 0.7× 26 2.2× 28 334
P. O’Neil United States 6 249 0.6× 59 1.3× 74 1.8× 25 0.8× 16 1.3× 14 268
S. Locorotondo Belgium 10 266 0.7× 51 1.1× 33 0.8× 51 1.6× 11 0.9× 19 269
S. Inaba Japan 14 512 1.3× 56 1.2× 34 0.8× 57 1.8× 10 0.8× 54 533
K. Joardar United States 9 391 1.0× 32 0.7× 18 0.4× 36 1.2× 5 0.4× 20 399
Narain Arora Germany 8 566 1.4× 41 0.9× 39 1.0× 82 2.6× 10 0.8× 15 579
S. Ogura United States 9 565 1.4× 42 0.9× 24 0.6× 58 1.9× 7 0.6× 27 577
C. Kuo United States 5 499 1.2× 29 0.6× 29 0.7× 74 2.4× 15 1.3× 9 516
Gaspard Hiblot Belgium 10 259 0.6× 42 0.9× 25 0.6× 34 1.1× 8 0.7× 51 291

Countries citing papers authored by A. Acovic

Since Specialization
Citations

This map shows the geographic impact of A. Acovic's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Acovic with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Acovic more than expected).

Fields of papers citing papers by A. Acovic

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Acovic. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Acovic. The network helps show where A. Acovic may publish in the future.

Co-authorship network of co-authors of A. Acovic

This figure shows the co-authorship network connecting the top 25 collaborators of A. Acovic. A scholar is included among the top collaborators of A. Acovic based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Acovic. A. Acovic is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bucher, Matthias, et al.. (2017). Statistical analysis of 1/f noise in enclosed-gate N- and PMOS transistors. 16. 1–4. 1 indexed citations
2.
3.
Jazaeri, Farzan, Christian Enz, F. Krummenacher, et al.. (2017). Variability of Low Frequency Noise and mismatch in CORNER DOPED and standard CMOS technology. Infoscience (Ecole Polytechnique Fédérale de Lausanne). us20130092987. 1–4. 1 indexed citations
4.
5.
Acovic, A., et al.. (2012). Physical mechanism of interpoly capacitance reduction in high-voltage stress. Solid-State Electronics. 73. 21–26. 3 indexed citations
6.
7.
Acovic, A., et al.. (2005). Hot-Carrier Reliability of Fully Depleted Accumulation Mode Soi Mosfets. 134–135. 1 indexed citations
8.
Rosa, Giuseppe La, et al.. (2002). NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies. 282–286. 76 indexed citations
9.
Jeandupeux, O., Vittorio Marsico, A. Acovic, et al.. (2002). Use of scanning capacitance microscopy for controlling wafer processing. Microelectronics Reliability. 42(2). 225–231. 14 indexed citations
10.
Ganin, E., J.H. Comfort, J.Y.-C. Sun, et al.. (2002). Low thermal budget antimony/phosphorus NMOS technology for CMOS. 645–648. 1 indexed citations
11.
Subbanna, S., D.L. Harame, B.A. Chappell, et al.. (2002). A novel borderless contact/interconnect technology using aluminum oxide etch stop for high performance SRAM and logic. 441–444. 3 indexed citations
12.
Selmi, L., M. Pavesi, H.‐S. Philip Wong, A. Acovic, & E. Sangiorgi. (2002). A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs. Institutional Research Information System (University of Udine). 49–52.
13.
Acovic, A., et al.. (1996). A review of hot-carrier degradation mechanisms in MOSFETs. Microelectronics Reliability. 36(7-8). 845–869. 81 indexed citations
14.
Mohammad, S. Noor, et al.. (1995). Fowler-Nordheim tunneling of carriers in MOS transistors: Two-dimensional simulation of gate current employing FIELDAY. Solid-State Electronics. 38(4). 807–814. 7 indexed citations
15.
Acovic, A., Ching-Fang Hsu, L. C. Hsia, & J. Aitken. (1993). Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide. Solid-State Electronics. 36(9). 1353–1355. 6 indexed citations
16.
Dana, S. S., M. Anderle, Gary W. Rubloff, & A. Acovic. (1993). Chemical vapor deposition of rough-morphology silicon films over a broad temperature range. Applied Physics Letters. 63(10). 1387–1389. 4 indexed citations
17.
Acovic, A., et al.. (1993). X-Ray Lithography Induced Radiation Effects In Deep Submicron Cmos Devices. MRS Proceedings. 306. 1 indexed citations
18.
Hsu, Ching-Fang, et al.. (1992). Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices. Journal of Electronic Materials. 21(7). 769–773. 1 indexed citations
19.
Sadana, D. K., A. Acovic, B. Davari, et al.. (1992). Boron redistribution in arsenic-implanted silicon and short-channel effects in metal–oxide–semiconductor field effect transistors. Applied Physics Letters. 61(25). 3038–3040. 14 indexed citations
20.
Hsu, Chih-Wei, A. Acovic, L. Dori, et al.. (1992). A High Speed, Low Power P-Channel Flash EEPROM Using Silicon Rich Oxide as Tunneling Dielectric. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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