P.A. McFarland

446 total citations
19 papers, 262 citations indexed

About

P.A. McFarland is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, P.A. McFarland has authored 19 papers receiving a total of 262 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 1 paper in Mechanical Engineering. Recurrent topics in P.A. McFarland's work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). P.A. McFarland is often cited by papers focused on Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). P.A. McFarland collaborates with scholars based in United States and Italy. P.A. McFarland's co-authors include C. Y. Wong, C. Y. Ting, G. Shahidi, B. Davari, T.H. Ning, M.R. Polcari, J.H. Comfort, J.D. Warnock, R.H. Dennard and T.I. Chappell and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

P.A. McFarland

17 papers receiving 248 citations

Peers

Countries citing papers authored by P.A. McFarland

Since Specialization

Citations

This map shows the geographic impact of P.A. McFarland's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.A. McFarland with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.A. McFarland more than expected).

Fields of papers citing papers by P.A. McFarland

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.A. McFarland. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.A. McFarland. The network helps show where P.A. McFarland may publish in the future.

Co-authorship network of co-authors of P.A. McFarland

This figure shows the co-authorship network connecting the top 25 collaborators of P.A. McFarland. A scholar is included among the top collaborators of P.A. McFarland based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.A. McFarland. P.A. McFarland is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

19 of 19 papers shown

#	Work	Indexed citations
1	A simple and high-performance 130 nm SOI eDRAM technology using floating-body pass-gate transistor in trench-capacitor cell for system-on-a-chip (SoC) applications 2004 ·M. Kumar, (unknown), (unknown), (unknown), (unknown), (unknown), D. Dobuzinsky, P.A. McFarland, (unknown), (unknown), (unknown), (unknown), P. Parries, Shankar S. Iyer, (unknown), (unknown)	3
2	A high performance low temperature 0.3 mu m CMOS on SIMOX 2003 ·G. Shahidi, B. Davari, T. Bucelot, D.S. Zicherman, P.A. McFarland, (unknown), (unknown), (unknown), (unknown), Riccardo Lombardi, (unknown), M.R. Polcari, T.H. Ning	1
3	A high performance BiCMOS technology using 0.25 mu m CMOS and double poly 47 GHz bipolar 2003 ·G. Shahidi, J. Warnock, B. Davari, (unknown), Yuan Taur, C. Y. Wong, (unknown), (unknown), D.D. Tang, K.A. Jenkins, P.A. McFarland, R. Schulz, D.S. Zicherman, P. Coane, D. Klaus, J.Y.-C. Sun, M.R. Polcari, T.H. Ning	0
4	A 0.13 μm high-performance SOI logic technology with embedded DRAM for system-on-a-chip application 2002 ·(unknown), (unknown), (unknown), (unknown), (unknown), P.A. McFarland, J. Benedict, (unknown), (unknown), (unknown), (unknown), (unknown), D. K. Sadana	7
5	Trench storage capacitors for high density DRAMs 2002 ·(unknown), (unknown), Z. A. Weinberg, G. Bronner, P.A. McFarland, P. Coane, (unknown), A.C. Megdanis, K. Stein, S. Cohen	5
6	Role of charge transport and trapping in the reliability of submicron polysilicon thin film transistors 2002 ·Frank Libsch, C. Y. Wong, P.A. McFarland	1
7	Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing 2002 ·G. Shahidi, B. Davari, Yuan Taur, J. Warnock, M.R. Wordeman, P.A. McFarland, Sebastian Mäder, (unknown), (unknown), G. Bronner, (unknown), (unknown), M.R. Polcari, T.H. Ning	7
8	A novel high-performance lateral bipolar on SOI 2002 ·G. Shahidi, D.D. Tang, B. Davari, Yuan Taur, P.A. McFarland, K.A. Jenkins, D. A. Danner, (unknown), A.C. Megdanis, E. Petrillo, M.R. Polcari, T.H. Ning	19
9	Characteristics of vertical p-channel MOSFETs for high density circuit application 2002 ·(unknown), (unknown), (unknown), G. Bronner, P.A. McFarland, Y. T. Lii, (unknown), F. L. Pesavento, (unknown), Wei Hwang, S.H. Dhong	0
10	Material development of SIMOX with a thin box 2002 ·D. K. Sadana, H.J. Hovel, J. L. Freeouf, (unknown), P.A. McFarland, (unknown)	1
11	Two-dimensional profiling of shallow junctions in Si metal-oxide-semiconductor structures using scanning tunneling spectroscopy and transmission electron microscopy 1996 ·Journal of Applied Physics ·Edward T. Yu, Katayun Barmak, P. Ronsheim, Matthew B. Johnson, P.A. McFarland, J.-M. Halbout	22
12	CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications 1995 ·IBM Journal of Research and Development ·G. Shahidi, J.D. Warnock, J.H. Comfort, (unknown), P.A. McFarland, A. Acovic, T.I. Chappell, B.A. Chappell, T.H. Ning, C.J. Anderson, R.H. Dennard, J.Y.-C. Sun, M.R. Polcari, B. Davari	31
13	A room temperature 0.1 μm CMOS on SOI 1994 ·IEEE Transactions on Electron Devices ·G. Shahidi, (unknown), B.A. Chappell, T.I. Chappell, J.H. Comfort, B. Davari, R.H. Dennard, R. Franch, P.A. McFarland, (unknown), T.H. Ning, M.R. Polcari, J.D. Warnock	64
14	High-performance devices for a 0.15- mu m CMOS technology 1993 ·IEEE Electron Device Letters ·G. Shahidi, J. Warnock, (unknown), P.A. McFarland, A. Acovic, S. Subbanna, E. Ganin, E.F. Crabbé, J.H. Comfort, J.Y.-C. Sun, T.H. Ning, B. Davari	25
15	Metal migration into polysilicon emitter after very high current stress 1992 ·IEEE Electron Device Letters ·D.D. Tang, C. Y. Wong, P.A. McFarland	9
16	A Fully Planarized 0.25 /spl mu/m CMOS Technology 1991 ·(unknown), (unknown), Y. T. Lii, A.C. Megdanis, P.A. McFarland, G. Bronner	1
17	Characteristics of Arsenic Doped Polycrystalline Silicon-Gate Capacitors After Rapid Thermal Processing 1987 ·MRS Proceedings ·R. Angelucci, C. Y. Wong, J.Y.-C. Sun, G. Scilla, P.A. McFarland, A.C. Megdanis, Elena Landi	2
18	Cross-sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus-doped polycrystalline silicon gate 1986 ·Journal of Applied Physics ·C. Y. Wong, (unknown), P.A. McFarland, F. M. d’Heurle, C. Y. Ting	13
19	Thermal stability of TiSi2 on mono- and polycrystalline silicon 1986 ·Journal of Applied Physics ·C. Y. Wong, (unknown), P.A. McFarland, C. Y. Ting	51

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact