Y. J. Mii

2.4k total citations · 1 hit paper
37 papers, 1.6k citations indexed

About

Y. J. Mii is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Y. J. Mii has authored 37 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in Y. J. Mii's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Semiconductor Quantum Structures and Devices (10 papers). Y. J. Mii is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Semiconductor Quantum Structures and Devices (10 papers). Y. J. Mii collaborates with scholars based in United States, Taiwan and Singapore. Y. J. Mii's co-authors include Eugene A. Fitzgerald, B. E. Weir, Y. H. Xie, R. P. G. Karunasiri, D. Brasen, Jürgen Michel, A. R. Kortan, G.A. Sai-Halasz, D. Edelstein and L. C. Feldman and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Y. J. Mii

35 papers receiving 1.5k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

1991 563 citations Eugene A. Fitzgerald, Y. H. Xie et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by Y. J. Mii

Since Specialization

Citations

This map shows the geographic impact of Y. J. Mii's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. J. Mii with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. J. Mii more than expected).

Fields of papers citing papers by Y. J. Mii

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. J. Mii. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. J. Mii. The network helps show where Y. J. Mii may publish in the future.

Co-authorship network of co-authors of Y. J. Mii

This figure shows the co-authorship network connecting the top 25 collaborators of Y. J. Mii. A scholar is included among the top collaborators of Y. J. Mii based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. J. Mii. Y. J. Mii is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Semiconductor Industry Outlook and New Technology Frontiers 2024 ·Y. J. Mii	7
2	Semiconductor Innovations, from Device to System 2022 ·2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Y. J. Mii	24
3	A new enhancement layer to improve copper interconnect performance 2010 ·(unknown), C.H. Hsieh, (unknown), H.J. Tao, Min Cao, Y. J. Mii	20
4	SEM metrology damage in polysilicon line and its impact on LWR evaluation 2009 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown), (unknown), Yu‐Jing Chiu, H.J. Tao, Y. J. Mii	1
5	Electrical and Physical Properties of Er-Doped HfO[sub 2] High-k Dielectrics Prepared by Atomic Layer Deposition 2009 ·Electrochemical and Solid-State Letters ·Lei Wu, H.Y. Yu, K. L. Pey, Jing Pan, M. Tuominen, (unknown), (unknown), (unknown), Kevin Huang, H.J. Tao, Y. J. Mii	8
6	Practical and bias-free LWR measurement by CDSEM 2008 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown), Yu‐Jing Chiu, H.J. Tao, Y. J. Mii	11
7	High performance 0.1 μm CMOS devices with 1.5 V power supply 2002 ·Y. Taur, Shalom J. Wind, Y. J. Mii, Y. T. Lii, D. Moy, K.A. Jenkins, (unknown), P. Coane, D. Klaus, J. J. Bucchignano, M.G. Rosenfield, M. G. R. Thomson, M.R. Polcari	24
8	An ultra-low power 0.1 μm CMOS 2002 ·Y. J. Mii, Shalom J. Wind, Yuan Taur, Y. T. Lii, D. Klaus, J. J. Bucchignano	6
9	CMOS scaling into the 21st century: 0.1 µm and beyond 1995 ·IBM Journal of Research and Development ·Y. Taur, Y. J. Mii, D.J. Frank, H.‐S. Philip Wong, D. A. Buchanan, Shalom J. Wind, S. A. Rishton, G.A. Sai-Halasz, E. Nowak	82
10	High performance sub-0.1 μm silicon n-metal–oxide–semiconductor transistors with composite metal/polysilicon gates 1993 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. A. Rishton, Y. J. Mii, D. P. Kern, Yuan Taur, K. Y. Lee, (unknown), K.A. Jenkins, (unknown), Tom J. Brown, D. A. Danner, (unknown), M.R. Polcari	2
11	Evaluation of erbium-doped silicon for optoelectronic applications 1991 ·Journal of Applied Physics ·Ya Xie, Eugene A. Fitzgerald, Y. J. Mii	82
12	Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature 1991 ·Journal of Electronic Materials ·Cynthia A. Volkert, Eugene A. Fitzgerald, R. Hull, Ya Xie, Y. J. Mii	13
13	Strain-Free Ge_xSi_1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates 1991 ·MRS Proceedings ·Eugene A. Fitzgerald, Ya Xie, M. L. Green, D. Brasen, A. R. Kortan, Y. J. Mii, Jürgen Michel, B. E. Weir, L. C. Feldman, J. M. Kuo	14
14	Hole intersubband absorption in δ-doped multiple Si layers 1991 ·Applied Physics Letters ·(unknown), R. P. G. Karunasiri, Y. J. Mii, (unknown)	36
15	Observation of Intersubband Absorption in Boron δ-Doped Si Layers 1991 ·MRS Proceedings ·J. S. Park, R. P. G. Karunasiri, K. L. Wang, Y. J. Mii, Jeremy D. Murray	1
16	Molecular Beam Epitaxial Growth of Very High Mobility Two-Dimensional Electron Gases in Si/GeSi Heterostructures 1991 ·MRS Proceedings ·Y. H. Xie, Eugene A. Fitzgerald, Y. J. Mii, D. Monroe, (unknown), B. E. Weir, L. C. Feldman	7
17	Large Stark shifts of the local to global state intersubband transitions in step quantum wells 1990 ·Applied Physics Letters ·Y. J. Mii, R. P. G. Karunasiri, (unknown), (unknown), (unknown)	51
18	Growth and characterization of doped GaAs/AlGaAs multiple quantum well structures on Si substrates for infrared detection 1989 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Y. J. Mii, R. P. G. Karunasiri, (unknown), Gang Bai	2
19	Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates 1988 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Y. J. Mii, T. L. Lin, Y. C. Kao, Bin Wu, (unknown), C. W. Nieh, David N. Jamieson, (unknown)	20
20	Electrical and optical properties of GaAs/AlGaAs multiple quantum wells grown on Si substrates 1988 ·Applied Physics Letters ·Y. J. Mii, R. P. G. Karunasiri, (unknown)	1

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