R.H. Dennard

11.3k total citations · 3 hit papers
103 papers, 7.7k citations indexed

About

R.H. Dennard is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Hardware and Architecture. According to data from OpenAlex, R.H. Dennard has authored 103 papers receiving a total of 7.7k indexed citations (citations by other indexed papers that have themselves been cited), including 99 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 8 papers in Hardware and Architecture. Recurrent topics in R.H. Dennard's work include Advancements in Semiconductor Devices and Circuit Design (80 papers), Semiconductor materials and devices (79 papers) and Integrated Circuits and Semiconductor Failure Analysis (24 papers). R.H. Dennard is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (80 papers), Semiconductor materials and devices (79 papers) and Integrated Circuits and Semiconductor Failure Analysis (24 papers). R.H. Dennard collaborates with scholars based in United States, Japan and Slovakia. R.H. Dennard's co-authors include F.H. Gaensslen, E. Bassous, A. LeBlanc, V.L. Rideout, Yuan Taur, P. M. Solomon, E. Nowak, D.J. Frank, H.‐S. Philip Wong and M.R. Wordeman and has published in prestigious journals such as Proceedings of the IEEE, IEEE Journal of Solid-State Circuits and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

R.H. Dennard

99 papers receiving 7.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Design of ion-implanted MOSFET's with very small physical dimensions

1974 2.2k citations R.H. Dennard, F.H. Gaensslen et al. IEEE Journal of Solid-State Circuits profile →
Device scaling limits of Si MOSFETs and their application dependencies

2001 1.1k citations D.J. Frank, R.H. Dennard et al. profile →
Stable SRAM cell design for the 32 nm node and beyond

2005 449 citations R.H. Dennard, Robert K. Montoye et al. profile →

Peers

Countries citing papers authored by R.H. Dennard

Since Specialization

Citations

This map shows the geographic impact of R.H. Dennard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.H. Dennard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.H. Dennard more than expected).

Fields of papers citing papers by R.H. Dennard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.H. Dennard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.H. Dennard. The network helps show where R.H. Dennard may publish in the future.

Co-authorship network of co-authors of R.H. Dennard

This figure shows the co-authorship network connecting the top 25 collaborators of R.H. Dennard. A scholar is included among the top collaborators of R.H. Dennard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.H. Dennard. R.H. Dennard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Advanced FDSOI Device Design: The U-Channel Device for 7 nm Node and Beyond 2018 ·IEEE Journal of the Electron Devices Society ·R. Muralidhar, R.H. Dennard, Takashi Ando, Isaac Lauer, Terence B. Hook	7
2	A fully-integrated switched-capacitor 2∶1 voltage converter with regulation capability and 90% efficiency at 2.3A/mm<sup>2</sup> 2010 ·Leland Chang, Robert K. Montoye, (unknown), Alan J. Weger, Kevin Stawiasz, R.H. Dennard	116
3	FDSOI CMOS with dual backgate control for performance and power modulation 2009 ·Jeng-Bang Yau, Jin Cai, (unknown), R.H. Dennard, Arvind Kumar, (unknown), A. Reznicek, P. M. Solomon, (unknown), Steven J. Koester, Wilfried Haensch	2
4	Soft error rate scaling for emerging SOI technology options 2003 ·P. Oldiges, K. Bernstein, David F. Heidel, (unknown), Ethan H. Cannon, R.H. Dennard, Haotian Tang, M. Ieong, H.‐S. Philip Wong	22
5	Supply voltage strategies for minimizing the power of CMOS processors 2003 ·Jin Cai, Yuan Taur, (unknown), D.J. Frank, Stephen Kosonocky, R.H. Dennard	11
6	Channel profile optimization and device design for low-power high-performance dynamic-threshold MOSFET 2002 ·C. Wann, F. Assaderaghi, R.H. Dennard, Chenming Hu, G. Shahidi, Yuan Taur	25
7	CMOS with active well bias for low-power and RF/analog applications 2002 ·C. Wann, James A. Harrington, (unknown), S. Biesemans, Ki Jin Han, R.H. Dennard, (unknown), (unknown), R. Mahnkopf, (unknown)	33
8	Iddq test: sensitivity analysis of scaling 2002 ·T.W. Williams, R.H. Dennard, R. Kapur, M.R. Mercer, Monica R. Maly	104
9	CMOS technology for low voltage/low power applications 2002 ·B. Davari, R.H. Dennard, G. Shahidi	1
10	A CMOS Off-Chip Driver/Receiver with Reduced Signal Swing and Reduced Power-Supply Disturbance 1991 ·European Solid-State Circuits Conference ·H.I. Hanafi, R.H. Dennard, (unknown), (unknown), D.S. Zicherman	1
11	Experimental technology and performance of 0.1-µm-gate-length FETs operated at liquid-nitrogen temperature 1990 ·IBM Journal of Research and Development ·G.A. Sai-Halasz, M.R. Wordeman, D. P. Kern, S. A. Rishton, E. Ganin, T. H. P. Chang, R.H. Dennard	31
12	0.5 μm CMOS Device Design and Characterization 1987 ·European Solid-State Device Research Conference ·H.I. Hanafi, M.R. Wordeman, (unknown), Yuan Taur, J.Y.-C. Sun, R.H. Dennard, D.S. Zicherman, (unknown), N. Haddad, (unknown), (unknown)	1
13	MOSFET miniaturization — From one micron to the limits 1985 ·Physica B+C ·R.H. Dennard, M.R. Wordeman	4
14	A Fully Scaled Half-Micrometer NMOS Technology Using Direct-Write E-Beam Lithography 1984 ·Symposium on VLSI Technology ·M.R. Wordeman, (unknown), R.H. Dennard, G.A. Sai-Halasz, W. W. Molzen	1
15	Modeling and Control of Alpha-Particle Effects in Scaled-Down VLSI Circuits 1981 ·Symposium on VLSI Technology ·R.H. Dennard, G.A. Sai-Halasz, M.R. Wordeman	2
16	A 34 /spl mu/m/SUP 2/ DRAM cell fabricated with a 1 /spl mu/m single-level polycide FET technology 1981 ·IEEE Journal of Solid-State Circuits ·H.H. Chao, R.H. Dennard, M. Y. Tsai, M.R. Wordeman, A. Cramer	4
17	Hot-electron design constraints for one-micron IGFET's 1978 ·T.H. Ning, Peter W. Cook, R.H. Dennard, C. M. Osburn, S.E. Schuster, H.N. Yu	8
18	Fabrication of a miniature 8K-bit memory chip using electron-beam exposure 1975 ·Journal of Vacuum Science and Technology ·H.N. Yu, R.H. Dennard, T. H. P. Chang, C. M. Osburn, (unknown), (unknown)	38
19	Design of ion-implanted MOSFET's with very small physical dimensions breakdown → 1974 ·IEEE Journal of Solid-State Circuits ·R.H. Dennard, F.H. Gaensslen, (unknown), V.L. Rideout, E. Bassous, A. LeBlanc	2196
20	IGFET circuit performance-n-channel versus p-channel 1969 ·IEEE Journal of Solid-State Circuits ·(unknown), D.L. Critchlow, R.H. Dennard, Lewis M. Terman	8

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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