J.M.C. Stork

3.9k total citations · 1 hit paper
80 papers, 2.6k citations indexed

About

J.M.C. Stork is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, J.M.C. Stork has authored 80 papers receiving a total of 2.6k indexed citations (citations by other indexed papers that have themselves been cited), including 80 papers in Electrical and Electronic Engineering, 24 papers in Atomic and Molecular Physics, and Optics and 8 papers in Biomedical Engineering. Recurrent topics in J.M.C. Stork's work include Advancements in Semiconductor Devices and Circuit Design (67 papers), Semiconductor materials and devices (59 papers) and Radio Frequency Integrated Circuit Design (19 papers). J.M.C. Stork is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (67 papers), Semiconductor materials and devices (59 papers) and Radio Frequency Integrated Circuit Design (19 papers). J.M.C. Stork collaborates with scholars based in United States, Italy and Taiwan. J.M.C. Stork's co-authors include B.S. Meyerson, G.L. Patton, D.L. Harame, E.F. Crabbé, Subramanian S. Iyer, J.H. Comfort, J.Y.-C. Sun, G. Scilla, John D. Cressler and S. Tiwari and has published in prestigious journals such as Proceedings of the IEEE, IEEE Journal of Solid-State Circuits and Applied Surface Science.

In The Last Decade

J.M.C. Stork

79 papers receiving 2.5k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

1990 369 citations G.L. Patton, J.H. Comfort et al. IEEE Electron Device Letters profile →

Peers

Countries citing papers authored by J.M.C. Stork

Since Specialization

Citations

This map shows the geographic impact of J.M.C. Stork's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.M.C. Stork with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.M.C. Stork more than expected).

Fields of papers citing papers by J.M.C. Stork

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.M.C. Stork. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.M.C. Stork. The network helps show where J.M.C. Stork may publish in the future.

Co-authorship network of co-authors of J.M.C. Stork

This figure shows the co-authorship network connecting the top 25 collaborators of J.M.C. Stork. A scholar is included among the top collaborators of J.M.C. Stork based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.M.C. Stork. J.M.C. Stork is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	30 GHz polysilicon-emitter and single-crystal-emitter graded SiGe-base PNP transistors 2002 ·D.L. Harame, J.M.C. Stork, B.S. Meyerson, E.F. Crabbé, G. Scilla, E. de Frésart, (unknown), C. Stanis, G.L. Patton, J.H. Comfort, A. A. Bright, Jeffrey B. Johnson, S. Furkay	1
2	On the leverage of high f/sub T/ transistors for advanced high-speed bipolar circuits 2002 ·C.T. Chuang, Ken K. Chin, J.M.C. Stork, G.L. Patton, E.F. Crabbé, J.H. Comfort	2
3	Low temperature operation of Si and SiGe bipolar transistors 2002 ·E.F. Crabbé, G.L. Patton, J.M.C. Stork, J.H. Comfort, B.S. Meyerson, J.Y.-C. Sun	7
4	SiGe-base heterojunction bipolar transistors: physics and design issues 2002 ·G.L. Patton, J.M.C. Stork, J.H. Comfort, E.F. Crabbé, B.S. Meyerson, D.L. Harame, J.Y.-C. Sun	7
5	The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors 2002 ·E.F. Crabbé, J.M.C. Stork, G. Baccarani, Massimo V. Fischetti, S.E. Laux	18
6	Single crystal emitter gap for epitaxial Si- and SiGe-base transistors 2002 ·J.H. Comfort, E.F. Crabbé, John D. Cressler, (unknown), J.Y.-C. Sun, J. Malinowski, (unknown), Joachim N. Burghartz, J.M.C. Stork, B.S. Meyerson	3
7	SiGe Heterojunction Bipolar Transistors: The First Ten Years 1995 ·European Solid-State Device Research Conference ·J.M.C. Stork	1
8	<title>Liquid-helium temperature operation of silicon-germanium heterojunction bipolar transistors</title> 1994 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·John D. Cressler, Alvin Joseph, (unknown), J.H. Comfort, D.L. Harame, E.F. Crabbé, J.M.C. Stork	1
9	Low-temperature operation of SiGe p-n-p HBTs 1992 ·IEEE Transactions on Electron Devices ·E.F. Crabbé, D.L. Harame, B.S. Meyerson, J.M.C. Stork, J.Y.-C. Sun	2
10	73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters 1992 ·IEEE Electron Device Letters ·E.F. Crabbé, J.H. Comfort, (unknown), John D. Cressler, B.S. Meyerson, A.C. Megdanis, J.Y.-C. Sun, J.M.C. Stork	51
11	SiGe Heterojunction Bipolar Transistors 1991 ·MRS Proceedings ·M. Arienzo, J.H. Comfort, E.F. Crabbé, (unknown), Subramanian S. Iyer, B.S. Meyerson, G.L. Patton, J.M.C. Stork, (unknown)	9
12	Device design issues for a high-performance technology with Si or SiGe epitaxial base 1991 ·Microelectronic Engineering ·Joachim N. Burghartz, John D. Cressler, K.A. Jenkins, J.Y.-C. Sun, J.M.C. Stork, J.H. Comfort, Timothy A. Brunner, C. Stanis	5
13	Narrow band gap base heterojunction bipolar transistors using SiGe alloys 1990 ·Thin Solid Films ·Subramanian S. Iyer, G.L. Patton, D.L. Harame, J.M.C. Stork, E.F. Crabbé, B.S. Meyerson	6
14	Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology 1990 ·IEEE Electron Device Letters ·Joachim N. Burghartz, J.H. Comfort, G.L. Patton, B.S. Meyerson, J.Y.-C. Sun, J.M.C. Stork, Sebastian Mäder, C. Stanis, G. Scilla, (unknown)	25
15	SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process 1990 ·D.L. Harame, J.M.C. Stork, B.S. Meyerson, E.F. Crabbé, G.L. Patton, G. Scilla, E. de Frésart, A. A. Bright, C. Stanis, A.C. Megdanis, (unknown), E. Petrillo, (unknown), (unknown), K. Chan	10
16	Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperature 1989 ·IEEE Transactions on Electron Devices ·J.M.C. Stork, D.L. Harame, (unknown), T.N. Nguyen	23
17	Heterojunction bipolar transistors using Si-Ge alloys 1989 ·IEEE Transactions on Electron Devices ·Subramanian S. Iyer, G.L. Patton, J.M.C. Stork, B.S. Meyerson, D.L. Harame	296
18	Design considerations of high-performance narrow-emitter bipolar transistors 1987 ·IEEE Electron Device Letters ·D.D. Tang, Tze-Chiang Chen, Ching-Te Chuang, G.P. Li, J.M.C. Stork, M. B. Ketchen, (unknown), T.H. Ning	25
19	The Impact of Non-Ohmic Polysilicon Emitter Resistance on Bipolar Transistor Performance 1986 ·Symposium on VLSI Technology ·J.M.C. Stork, John D. Cressler	5
20	Bipolar device scaling limits from tunneling in base-emitter junctions 1983 ·J.M.C. Stork, R. Isaac	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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