K. Chan

4.4k citations

91 papers · 2.7k indexed · 1 hit paper · h-index 23

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 60
- Advancements in Semiconductor Devices and Circuit Design 42
- Integrated Circuits and Semiconductor Failure Analysis 16
- Thin-Film Transistor Technologies 12
- Silicon and Solar Cell Technologies 11
Materials Chemistry top 5%
- Diamond and Carbon-based Materials Research 7
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces 9
Biomedical Engineering top 5%
- Nanowire Synthesis and Applications 10
Structural Biology

Co-authors: Phaedon Avouris Richard Martel Joerg Appenzeller C. Lavoie J. Tersoff Vincent Derycke Farhan Rana H.‐S. Philip Wong
Cited by: Electrical and Electronic Engineering Materials Chemistry Atomic and Molecular Physics, and Optics
Journals: IEEE Electron Device Letters (5 papers)Journal of Applied Physics (5 papers)Applied Physics Letters (4 papers)
Partner nations: United States United Kingdom Hong Kong

In The Last Decade

K. Chan

84 papers receiving 2.6k citations

Hit Papers

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Peers

Countries citing papers authored by K. Chan

Since Specialization

Citations

This map shows the geographic impact of K. Chan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Chan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Chan more than expected).

Fields of papers citing papers by K. Chan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Chan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Chan. The network helps show where K. Chan may publish in the future.

Co-authorship network

The 25 scholars most cited alongside K. Chan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K. Chan Line = papers co-authored together K. Chan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Microstructure characterization of AlCrFeCoNi high-entropy alloy coating on Inconel 718 by electrospark deposition Materials Characterization ·Yu Xia,J.G. Lopes,K. Chan,Khaled Ali Baniyaseen,J.P. Oliveira,Y. Zhou,Peng Peng	2025	1
2	Interaction-dependent photophysical behavior of two-component ensembles arising from conjugated polyelectrolytes and platinum(II) complexes of different supramolecular architectures Chinese Science Bulletin (Chinese Version) ·K. Chan,Clive Yik‐Sham Chung,Vivian Wing‐Wah Yam	2025	0
3	High Mobility High-Ge-Content SiGe PMOSFETs Using Al₂O₃/HfO₂ Stacks With <italic>In-Situ</italic> O₃ Treatment IEEE Electron Device Letters ·Takashi Ando,Pouya Hashemi,J. Bruley,John Rozen,Lorena Monsalve G.,Siyuranga O. Koswatta,K. Chan,E. Cartier,重樹乾,Vijay Narayanan	2017	34
4	High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications Pouya Hashemi,Takashi Ando,Karthik Balakrishnan,Siyuranga O. Koswatta,Heming Guan,J. A. Ott,K. Chan,J. Bruley,Sebastian Engelmann,Vijay Narayanan,E. Leobandung,重樹乾	2017	6
5	Conjugated Polyelectrolyte‐Induced Self‐Assembly of Alkynylplatinum(II) 2,6‐Bis(benzimidazol‐2′‐yl)pyridine Complexes Chemistry - A European Journal ·K. Chan,Clive Yik‐Sham Chung,Vivian Wing‐Wah Yam	2015	22
6	First demonstration of high-Ge-content strained-Si<inf>1−x</inf>Ge<inf>x</inf> (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications Pouya Hashemi,Karthik Balakrishnan,Sebastian Engelmann,J. A. Ott,A. Khakifirooz,Ashish Baraskar,Marinus Hopstaken,J. Newbury,K. Chan,E. Leobandung,重樹乾,Dae-Gyu Park	2014	22
7	A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices IEEE Electron Device Letters ·R. Muralidhar,Jin Cai,Isaac Lauer,K. Chan,T.G. Pearce,Younghee Kim,Zhibin Ren,Dae-Gyu Park,Phil Oldiges,G. Shahidi	2012	5
8	Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs K. Rim,K. Chan,L. Shi,D. Boyd,J. A. Ott,N. Klymko,F. Cardone,C.A.F.M. Grütters,Steven J. Koester,L. Buckers,D. Canaperi,B. To,Elizabeth A. Duch,I. Babich,R. Carruthers,P. Saunders,George Walker,S-N Nguyen,M. Steen,M. Ieong	2004	103
9	Preparation of 200 mm silicon substrates with metal ground-plane for double-gate SOI devices L. J. Huang,K. Chan,P. M. Solomon,Benyameen Keelson,C. D’Emic,濱屋明美,Ann M. Cannon,H.‐S. Philip Wong	2002	0
10	Defect printability analysis study using virtual stepper system in a production environment Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Khaled Tawfik Elfeel,W. Holleman,Akio Oguri,Gabriel Silva Souza de Oliveira,Yuri Rezende Guimarães Nogueira,Muhammad Adriansyah Hasbad,Sourabh Konkala,Michael Chang,Vidia Ambarwati,K. Chan,R P Leme,Fernando Dupont Crespo,Linyong Pang	2002	2
11	A low power 77 K nano-memory with single electron nano-crystal storage S. Tiwari,Farhan Rana,Wei Chen,K. Chan,H.I. Hanafi	2002	2
12	New polysilicon disposable sidewall process for sub-50 nm CMOS Chen Huang,D. Boyd,Devi Nuraini Santi,J. J. Bucchignano,Jian Cai,K. Chan,H.I. Hanafi,P. Kozlowski,B Kells,R. Roy,Linqi Shi,E. Sikorski,M. Surendra,Shalom J. Wind,WATILA SANTOS BRAGA,Junghyo Yoon,Miguel Pereira de Oliveira,Sandy Johnstone,Yuan Taur	2001	1
13	Enhanced dispositioning of reticle defects using the Virtual Stepper with automated defect severity scoring Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Fernando Dupont Crespo,A.L. Dajani,رشا متولى,Linyong Pang,K. Chan	2001	1
14	Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubesbreakdown → Physical Review Letters ·Richard Martel,Vincent Derycke,C. Lavoie,Joerg Appenzeller,K. Chan,J. Tersoff,Phaedon Avouris	2001	592
15	Plasma enhanced chemical vapor deposition of TiO2 in microwave-radio frequency hybrid plasma reactor Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Young H. Lee,K. Chan,Michael Brady	1995	63
16	Pattern transfer onto carbon films on silicon using radio frequency oxygen plasma etching Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·K. Chan,G. A. J. Amaratunga,T.K.S. Wong	1992	9
17	Effects of surface etching before metal contact formation on carbon/diamond-silicon heterojunction diode characteristics Materials Science and Engineering B ·K. Chan,G. A. J. Amaratunga	1992	2
18	Current-voltage characterization for metal contacts on C/diamond thin films K. Chan,G. A. J. Amaratunga	1991	1
19	SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process D.L. Harame,J.M.C. Stork,B.S. Meyerson,E.F. Crabbé,G.L. Patton,G. Scilla,E. de Frésart,A. A. Bright,C. Stanis,A.C. Megdanis,Muhammad Huzaifa,Naveed Ahmad Khan,Tooba Gull,Muhammad Abbas Dilawar,Muhammad Abdullah,E. Petrillo,Saad El,Ranja Danielsen,K. Chan	1990	10
20	Surface analysis of realistic semiconductor microstructures Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·G. S. Oehrlein,K. Chan,M. Jaso,Gary W. Rubloff	1989	43

About K. Chan

K. Chan is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films, Industrial and Manufacturing Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 91 papers that have together received 2.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (60 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers), Thin-Film Transistor Technologies (12 papers), Silicon and Solar Cell Technologies (11 papers), Nanowire Synthesis and Applications (10 papers), Semiconductor materials and interfaces (9 papers) and Diamond and Carbon-based Materials Research (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.2k citations), Materials Chemistry (1.1k citations), Atomic and Molecular Physics, and Optics (575 citations), Biomedical Engineering (567 citations) and Structural Biology (11 citations). K. Chan has collaborated with scholars based in United States, United Kingdom and Hong Kong. Frequent co-authors include Phaedon Avouris, Richard Martel, Joerg Appenzeller, C. Lavoie, J. Tersoff, Vincent Derycke, Farhan Rana, H.‐S. Philip Wong, Sandip Tiwari and Leathen Shi. Their work appears in journals such as IEEE Electron Device Letters, Journal of Applied Physics, Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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