Ashish Baraskar

599 total citations
27 papers, 425 citations indexed

About

Ashish Baraskar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Ashish Baraskar has authored 27 papers receiving a total of 425 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in Ashish Baraskar's work include Semiconductor materials and devices (16 papers), Semiconductor Quantum Structures and Devices (9 papers) and Semiconductor materials and interfaces (9 papers). Ashish Baraskar is often cited by papers focused on Semiconductor materials and devices (16 papers), Semiconductor Quantum Structures and Devices (9 papers) and Semiconductor materials and interfaces (9 papers). Ashish Baraskar collaborates with scholars based in United States, Switzerland and India. Ashish Baraskar's co-authors include M.J.W. Rodwell, A. C. Gossard, B.J. Thibeault, Mark A. Wistey, Uttam Singisetti, Vibhor Jain, Yong Ju Lee, C. Vittoria, C. N. Chinnasamy and S. D. Yoon and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Ashish Baraskar

26 papers receiving 411 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ashish Baraskar United States 13 344 226 92 82 50 27 425
Kanji Yoh Japan 12 327 1.0× 390 1.7× 118 1.3× 86 1.0× 25 0.5× 76 486
Justin C. Hackley United States 9 322 0.9× 68 0.3× 258 2.8× 35 0.4× 33 0.7× 11 395
Yuzan Xiong United States 10 119 0.3× 183 0.8× 86 0.9× 32 0.4× 53 1.1× 26 288
Xuejian Xie China 6 317 0.9× 309 1.4× 221 2.4× 39 0.5× 8 0.2× 9 389
M. Winters Sweden 9 239 0.7× 68 0.3× 224 2.4× 92 1.1× 37 0.7× 16 332
R.L. Myers-Ward United States 11 244 0.7× 106 0.5× 198 2.2× 71 0.9× 55 1.1× 23 360
Satyavolu S. Papa Rao United States 9 213 0.6× 152 0.7× 58 0.6× 122 1.5× 37 0.7× 30 301
Victor P. Kuznetsov Russia 9 202 0.6× 107 0.5× 182 2.0× 81 1.0× 19 0.4× 72 280
D. Manger Germany 11 366 1.1× 61 0.3× 52 0.6× 36 0.4× 67 1.3× 21 401
Hiroyuki Okino Japan 11 195 0.6× 263 1.2× 67 0.7× 75 0.9× 29 0.6× 31 373

Countries citing papers authored by Ashish Baraskar

Since Specialization
Citations

This map shows the geographic impact of Ashish Baraskar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ashish Baraskar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ashish Baraskar more than expected).

Fields of papers citing papers by Ashish Baraskar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ashish Baraskar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ashish Baraskar. The network helps show where Ashish Baraskar may publish in the future.

Co-authorship network of co-authors of Ashish Baraskar

This figure shows the co-authorship network connecting the top 25 collaborators of Ashish Baraskar. A scholar is included among the top collaborators of Ashish Baraskar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ashish Baraskar. Ashish Baraskar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Jain, Vibhor, Ashish Baraskar, William J. Mitchell, et al.. (2013). InGaAs/InP DHBTs with emitter and base defined through electron‐beam lithography for reduced Ccb and increased RF cut‐off frequency. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(5). 769–772. 1 indexed citations
4.
Baraskar, Ashish, A. C. Gossard, & M.J.W. Rodwell. (2013). Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data. Journal of Applied Physics. 114(15). 38 indexed citations
5.
Hashemi, Pouya, Masaharu Kobayashi, A. Majumdar, et al.. (2013). High-performance Si 1−x Ge x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions. 9 indexed citations
6.
Baraskar, Ashish, A. C. Gossard, & M.J.W. Rodwell. (2012). Lower limits to specific contact resistivity. 196–199. 5 indexed citations
7.
Jain, Vibhor, Ashish Baraskar, B.J. Thibeault, et al.. (2011). 1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance. 271–272. 17 indexed citations
8.
Baraskar, Ashish. (2011). Development of Ultra-Low Resistance Ohmic Contacts for indium gallium arsenide/indium phosphide HBTs. 1 indexed citations
9.
Jain, Vibhor, Ashish Baraskar, B.J. Thibeault, et al.. (2011). InGaAs/InP DHBTs demonstrating simultaneous ƒ τ /ƒ max ∼ 460/850 GHz in a refractory emitter process. 1–4.
10.
Jain, Vibhor, Ashish Baraskar, B.J. Thibeault, et al.. (2010). InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous $f_{\tau}/f_{\max} \sim \hbox{430/800}\ \hbox{GHz}$. IEEE Electron Device Letters. 32(1). 24–26. 16 indexed citations
11.
Jain, Vibhor, Ashish Baraskar, B.J. Thibeault, et al.. (2010). High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology. 96. 153–154. 3 indexed citations
12.
Singisetti, Uttam, Mark A. Wistey, Ashish Baraskar, et al.. (2009). $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth. IEEE Electron Device Letters. 30(11). 1128–1130. 71 indexed citations
13.
Singisetti, Uttam, Mark A. Wistey, Ashish Baraskar, et al.. (2009). Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth. 23. 120–123. 4 indexed citations
14.
Baraskar, Ashish, Mark A. Wistey, Vibhor Jain, et al.. (2009). Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(4). 2036–2039. 44 indexed citations
15.
Jain, Vibhor, Ashish Baraskar, Mark A. Wistey, et al.. (2009). Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs. 358–361. 6 indexed citations
16.
Nguyen, Quang K., C. N. Chinnasamy, S. D. Yoon, et al.. (2008). Functionalization of FeCo alloy nanoparticles with highly dielectric amorphous oxide coatings. Journal of Applied Physics. 103(7). 24 indexed citations
17.
Wistey, Mark A., Vibhor Jain, Ashish Baraskar, et al.. (2008). THz Bipolar Transistor Circuits: Technical Feasibility, Technology Development, Integrated Circuit Results. 1–3. 7 indexed citations
18.
Yoon, S. D., Ashish Baraskar, Anton Geiler, et al.. (2008). Microwave, magnetic, and structural properties of nanocrystalline exchange-coupled Ni11Co11Fe66Zr7B4Cu1 films for high frequency applications. Journal of Applied Physics. 103(6). 4 indexed citations
19.
Chinnasamy, C. N., S. D. Yoon, Aria Yang, et al.. (2007). Effect of growth temperature on the magnetic, microwave, and cation inversion properties on NiFe2O4 thin films deposited by pulsed laser ablation deposition. Journal of Applied Physics. 101(9). 30 indexed citations
20.
Gurunathan, K., Ashish Baraskar, Rajendiran Marimuthu, & Dinesh Amalnerkar. (2005). Co-precipitation synthesis in the presence of surfactant and characterization of nanosized CaRuO3 powders and its application in fired thick film resistors in nanoelectronics. Materials Letters. 59(19-20). 2555–2562. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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