G. Scilla

2.7k citations

81 papers · 2.1k indexed · 1 hit paper · h-index 26

Impact in

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies

Papers in

Atomic and Molecular Physics, and Optics 41
- Semiconductor materials and interfaces 22
- Semiconductor Quantum Structures and Devices 18
Electrical and Electronic Engineering 66
- Semiconductor materials and devices 43
- Silicon and Solar Cell Technologies 24
- Advancements in Semiconductor Devices and Circuit Design 15
- Thin-Film Transistor Technologies 8

Co-authors: F. Cardone T. F. Kuech R. M. Potemski J.M.C. Stork B.S. Meyerson D.L. Harame F. M. d’Heurle G.L. Patton
Journals: Applied Physics Letters (15 papers)Journal of Crystal Growth (9 papers)Journal of Applied Physics (8 papers)IEEE Electron Device Letters (4 papers)Journal of The Electrochemical Society (4 papers)
Partner nations: United States Netherlands France

In The Last Decade

G. Scilla

81 papers receiving 2.0k citations

Hit Papers

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75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors 1990 · 369 citations

Peers

Countries citing papers authored by G. Scilla

Since Specialization

Citations

This map shows the geographic impact of G. Scilla's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Scilla with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Scilla more than expected).

Fields of papers citing papers by G. Scilla

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Scilla. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Scilla. The network helps show where G. Scilla may publish in the future.

Co-authorship network

The 25 scholars most cited alongside G. Scilla, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Scilla Line = papers co-authored together G. Scilla links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	30 GHz polysilicon-emitter and single-crystal-emitter graded SiGe-base PNP transistors D.L. Harame, J.M.C. Stork, B.S. Meyerson, E.F. Crabbé, G. Scilla, E. de Frésart, Louise M. Allison, C. Stanis, G.L. Patton, J.H. Comfort, A. A. Bright, Jeffrey B. Johnson, S. Furkay	2002	1
2	Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration Applied Physics Letters ·G. M. W. Kroesen, G. S. Oehrlein, E. de Frésart, G. Scilla	1992	12
3	Time-of-flight static secondary ion mass spectrometry study of imidization in pyromellitic dianhydride-4,4'-oxydianiline polyimide films Macromolecules ·Benjamin N. Eldridge, C. Feger, Michael J. Goldberg, W. Reuter, G. Scilla	1991	4
4	Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures Applied Physics Letters ·P. Agnello, T. O. Sedgwick, Mark S. Goorsky, J. A. Ott, T. S. Kuan, G. Scilla	1991	11
5	Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology IEEE Electron Device Letters ·Joachim N. Burghartz, J.H. Comfort, G.L. Patton, B.S. Meyerson, J.Y.-C. Sun, J.M.C. Stork, Sebastian Mäder, C. Stanis, G. Scilla, PAUL ROOT WOLPE	1990	25
6	SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process D.L. Harame, J.M.C. Stork, B.S. Meyerson, E.F. Crabbé, G.L. Patton, G. Scilla, E. de Frésart, A. A. Bright, C. Stanis, A.C. Megdanis, Muhammad Huzaifa,Naveed Ahmad Khan,Tooba Gull,Muhammad Abbas Dilawar,Muhammad Abdullah, E. Petrillo, Saad El, Ranja Danielsen, K. Chan	1990	10
7	Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2 Journal of Electronic Materials ·N.I. Buchan, T. F. Kuech, G. Scilla, F. Cardone, R. M. Potemski	1990	18
8	Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si Applied Physics Letters ·P. Fahey, Swaminathan P. Iyer, G. Scilla	1989	77
9	Evolution and chemical state of oxygen upon acid dissolution of YBa2Cu3O6.98 Materials Research Bulletin ·M. W. Shafer, R. A. de Groot, Tonjih Tazalli, G. Scilla, B. L. Olson, Emanuel I. Cooper	1989	6
10	Channeling of Shallow Si Implants Into GaAs as a Function of Tilt and Rotation Angles MRS Proceedings ·H.J. Hovel, Martin Hayes, Loreleï Margely-Lardeyret, G. Scilla, Johanna Lucía Campoverde Vizhñay, F. Cardone	1988	2
11	Deep levels and minority carrier lifetime in MOVPE p-type GaAs Journal of Crystal Growth ·David Neale, T. F. Kuech, M. A. Tischler, P. M. Mooney, G. Scilla, F. Cardone	1988	1
12	Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy Applied Physics Letters ·T. F. Kuech, M. A. Tischler, Janine Blenke, G. Scilla, R. M. Potemski, F. Cardone	1988	152
13	Outdiffusion of Magnesium from Mg + implanted GaAs. MRS Proceedings ·Hannele Lohikoski, Thomas N. Jackson, D. K. Sadana, A Rothe-Meyer, G. Scilla, F. Cardone	1988	2
14	Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy Applied Physics Letters ·Subramanian S. Iyer, S.L. Delage, G. Scilla	1988	25
15	Formation of Shallow Boron P⁺ Junctions Using Sb Amorphization MRS Proceedings ·E. Ganin, B. Davari, D.L. Harame, G. Scilla, G.A. Sai-Halasz	1988	1
16	Characteristics of Arsenic Doped Polycrystalline Silicon-Gate Capacitors After Rapid Thermal Processing MRS Proceedings ·R. Angelucci, C. Y. Wong, J.Y.-C. Sun, G. Scilla, P.A. McFarland, A.C. Megdanis, Elena Landi	1987	2
17	Dopant Diffusion in TiSi₂ MRS Proceedings ·F. M. d’Heurle, A. E. Michel, F. K. LeGoues, G. Scilla, J. T. Wetzel, P. Gaś	1986	3
18	SIMS study of Al and Cr metallizations on CdSe Journal of Vacuum Science and Technology ·G. Scilla, J. J. Wysòcki	1981	2
19	Sampling error in ion microprobe analysis Analytical Chemistry ·G. Scilla, George H. Morrison	1977	51
20	Evaluation of ’’barrier’’ metals for sintered platinum–GaAs contacts Journal of Vacuum Science and Technology ·Li-Yingyan, G. Scilla, Yeshen Feng, L.F. Eastman, George H. Morrison	1976	12

About G. Scilla

G. Scilla is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Surfaces, Coatings and Films and Computational Mechanics, having authored 81 papers that have together received 2.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (43 papers), Silicon and Solar Cell Technologies (24 papers), Semiconductor materials and interfaces (22 papers), Semiconductor Quantum Structures and Devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers), Ion-surface interactions and analysis (14 papers), Silicon Nanostructures and Photoluminescence (11 papers) and Thin-Film Transistor Technologies (8 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.3k citations), Electrical and Electronic Engineering (1.8k citations), Condensed Matter Physics (271 citations), Materials Chemistry (533 citations) and Computational Mechanics (191 citations). G. Scilla has collaborated with scholars based in United States, Netherlands and France. Frequent co-authors include F. Cardone, T. F. Kuech, R. M. Potemski, J.M.C. Stork, B.S. Meyerson, D.L. Harame, F. M. d’Heurle, G.L. Patton, G. S. Oehrlein and M. A. Tischler. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics, IEEE Electron Device Letters and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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