Isaac Lauer

1.9k citations

35 papers · 923 · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
Atomic and Molecular Physics, and Optics top 10%
- Quantum and electron transport phenomena

Papers in

Electrical and Electronic Engineering 29
- Semiconductor materials and devices 26
- Advancements in Semiconductor Devices and Circuit Design 24
- Integrated Circuits and Semiconductor Failure Analysis 11
- Silicon Carbide Semiconductor Technologies 5
Atomic and Molecular Physics, and Optics 7
- Quantum and electron transport phenomena 5

Co-authors: Michael Guillorn (6 shared papers)Terence B. Hook (3 shared papers)Phil Oldiges (4 shared papers)D.A. Antoniadis (5 shared papers)Seong-Dong Kim (1 shared paper)Steven J. Koester (6 shared papers)Malcolm S. Carroll (2 shared papers)Jin Cai (5 shared papers)
Journals: IEEE Electron Device Letters (4 papers)IEEE Transactions on Electron Devices (2 papers)PRX Quantum (2 papers)IEEE Transactions on Very Large Scale Integration (VLSI) Systems (1 paper)IEEE Transactions on Semiconductor Manufacturing (1 paper)
Partner nations: United States Switzerland

In The Last Decade

Isaac Lauer

32 papers receiving 878 citations

Peers

Countries citing papers authored by Isaac Lauer

Since Specialization

Citations

This map shows the geographic impact of Isaac Lauer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Isaac Lauer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Isaac Lauer more than expected).

Fields of papers citing papers by Isaac Lauer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Isaac Lauer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Isaac Lauer. The network helps show where Isaac Lauer may publish in the future.

Co-authors

The 25 scholars most cited alongside Isaac Lauer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Isaac Lauer Line = papers co-authored together Isaac Lauer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond Seong-Dong Kim, Michael Guillorn, Isaac Lauer, Phil Oldiges, Terence B. Hook, Myung-Hee Na	2015	116
2	Verifying multipartite entangled Greenberger-Horne-Zeilinger states via multiple quantum coherences Physical review. A ·Ken Xuan Wei, Isaac Lauer, Srikanth Srinivasan, Neereja Sundaresan, Douglas McClure, D.M. Toyli, David McKay, Jay Gambetta, Sarah Sheldon	2020	88
3	Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond Sarunya Bangsaruntip, Karthik Balakrishnan, S.-L. Cheng, Josephine Chang, Markus Brink, Isaac Lauer, Robert L. Bruce, Sebastian Engelmann, A. Pyzyna, G. M. Cohen, Lynne Gignac, Chris Breslin, J. Newbury, D. Klaus, A. Majumdar, J.W. Sleight, Michael Guillorn	2013	79
4	Low power circuit design based on heterojunction tunneling transistors (HETTs) Daeyeon Kim, Yoonmyung Lee, Jin Cai, Isaac Lauer, Leland Chang, Steven J. Koester, Dennis Sylvester, David Blaauw	2009	60
5	Dynamics of superconducting qubit relaxation times npj Quantum Information ·Malcolm S. Carroll, Sami Rosenblatt, Petar Jurcevic, Isaac Lauer, Abhinav Kandala	2022	58
6	Low-Power Circuit Analysis and Design Based on Heterojunction Tunneling Transistors (HETTs) IEEE Transactions on Very Large Scale Integration (VLSI) Systems ·Yoonmyung Lee, Daeyeon Kim, Jin Cai, Isaac Lauer, Leland Chang, Steven J. Koester, David Blaauw, Dennis Sylvester	2013	53
7	Channel doping impact on FinFETs for 22nm and beyond C.-H. Lin, R. Kambhampati, Robert J. Miller, Terence B. Hook, A. Bryant, Wilfried Haensch, P. Oldiges, Isaac Lauer, T. Yamashita, V. Basker, T. Standaert, K. Rim, E. Leobandung, H. Bu, Mukesh Khare	2012	52
8	Hamiltonian Engineering with Multicolor Drives for Fast Entangling Gates and Quantum Crosstalk Cancellation Physical Review Letters ·Ken Xuan Wei, Easwar Magesan, Isaac Lauer, Srikanth Srinivasan, Daniela F. Bogorin, Santino D. Carnevale, George Keefe, Young‐Seok Kim, D. Klaus, W. Landers, Neereja Sundaresan, Cindy Wang, Eric Zhang, Matthias Steffen, Oliver Dial, David McKay, Abhinav Kandala	2022	50
9	Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance Isaac Lauer, N. Loubet, S.D. Kim, J. A. Ott, S. Mignot, R. Venigalla, T. Yamashita, T. Standaert, J. Faltermeier, V. Basker, B. Doris, Michael Guillorn	2015	50
10	Strained Si on insulator technology: from materials to devices Solid-State Electronics ·T. A. Langdo, M. T. Currie, Zhiyuan Cheng, J.G. Fiorenza, M. Erdtmann, G. Braithwaite, C. W. Leitz, C.J. Vineis, John A. Carlin, Anthony Lochtefeld, Mayank T. Bulsara, Isaac Lauer, D.A. Antoniadis, Mark Somerville	2004	43
11	Fully Depleted n-MOSFETs on Supercritical Thickness Strained SOI IEEE Electron Device Letters ·Isaac Lauer, T. A. Langdo, Zhiyuan Cheng, J.G. Fiorenza, G. Braithwaite, M. T. Currie, C. W. Leitz, Anthony Lochtefeld, H. Badawi, Mayank T. Bulsara, Mark Somerville, D.A. Antoniadis	2004	36
12	Challenges and Opportunities for High Performance 32 nm CMOS Technology J.W. Sleight, Isaac Lauer, O. Dokumaci, David Fried, Dechao Guo, Bala Haran, Tosihide H. YOSIDA, C. Sheraw, D. Singh, Michael Steigerwalt, X. Wang, P. Oldiges, D. K. Sadana, C.Y. Sung, Wilfried Haensch, Mukesh Khare	2006	36
13	Two-Level-System Dynamics in a Superconducting Qubit Due to Background Ionizing Radiation PRX Quantum ·Ted Thorbeck, Andrew Eddins, Isaac Lauer, Douglas McClure, Malcolm S. Carroll	2023	35
14	Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain IEEE Electron Device Letters ·Isaac Lauer, D.A. Antoniadis	2005	27
15	Electron and hole mobility enhancements in sub-10 nm-thick strained silicon directly on insulator fabricated by a bond and etch-back technique Ingvar Åberg, Oluwamuyiwa Olubuyide, Cáit Ní Chléirigh, Isaac Lauer, D.A. Antoniadis, J. Li, R. Hull, Judy L. Hoyt	2004	18
16	Effect of Uniaxial Strain on the Drain Current of a Heterojunction Tunneling Field-Effect Transistor IEEE Electron Device Letters ·P. M. Solomon, Isaac Lauer, A. Majumdar, James T. Teherani, Mathieu Luisier, J. Cai, Steven J. Koester	2011	15
17	Operational Amplifier Based Test Structure for Quantifying Transistor Threshold Voltage Variation IEEE Transactions on Semiconductor Manufacturing ·Brian L. Ji, D.J. Pearson, Isaac Lauer, Franco Stellari, D.J. Frank, Leland Chang, M. B. Ketchen	2009	14
18	Toward Ultimate Scaling of MOSFET IEEE Transactions on Electron Devices ·R. Muralidhar, Isaac Lauer, Jin Cai, D.J. Frank, Phil Oldiges	2015	12
19	(Invited) Are Si/SiGe Tunneling Field-Effect Transistors a Good Idea? ECS Transactions ·Steven J. Koester, Isaac Lauer, Amlan Majumdar, Jim Cai, J.W. Sleight, Stephen W. Bedell, P. M. Solomon, Steven J. Laux, Leland Chang, Siyu Koswatta, Wilfried Haensch, P. Tomasini, Shawn Thomas	2010	12
20	Native Two-Qubit Gates in Fixed-Coupling, Fixed-Frequency Transmons Beyond Cross-Resonance Interaction PRX Quantum ·Ken Xuan Wei, Isaac Lauer, Emily Pritchett, William Shanks, David McKay, Ali Javadi-Abhari	2024	11

About Isaac Lauer

Isaac Lauer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Artificial Intelligence and Hardware and Architecture, having authored 35 papers that have together received 923 indexed citations. Recurring topics across this work include Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers), Integrated Circuits and Semiconductor Failure Analysis (11 papers), Quantum and electron transport phenomena (5 papers), Quantum Information and Cryptography (5 papers), Silicon Carbide Semiconductor Technologies (5 papers), Nanowire Synthesis and Applications (4 papers) and Quantum Computing Algorithms and Architecture (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (697 citations), Atomic and Molecular Physics, and Optics (229 citations), Artificial Intelligence (213 citations), Biomedical Engineering (164 citations) and Hardware and Architecture (22 citations). Isaac Lauer has collaborated with scholars based in United States and Switzerland. Frequent co-authors include Michael Guillorn, Terence B. Hook, Phil Oldiges, D.A. Antoniadis, Seong-Dong Kim, Steven J. Koester, Malcolm S. Carroll, Jin Cai, Leland Chang and Douglas McClure. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, PRX Quantum, IEEE Transactions on Very Large Scale Integration (VLSI) Systems and IEEE Transactions on Semiconductor Manufacturing.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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