G.L. Patton

2.4k total citations · 1 hit paper
46 papers, 1.7k citations indexed

About

G.L. Patton is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, G.L. Patton has authored 46 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in G.L. Patton's work include Semiconductor materials and devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers) and Radio Frequency Integrated Circuit Design (11 papers). G.L. Patton is often cited by papers focused on Semiconductor materials and devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers) and Radio Frequency Integrated Circuit Design (11 papers). G.L. Patton collaborates with scholars based in United States. G.L. Patton's co-authors include J.M.C. Stork, B.S. Meyerson, Subramanian S. Iyer, D.L. Harame, J.H. Comfort, E.F. Crabbé, J.Y.-C. Sun, J.D. Plummer, J. C. Bravman and G. Scilla and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and IEEE Journal of Solid-State Circuits.

In The Last Decade

G.L. Patton

46 papers receiving 1.6k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

1990 369 citations G.L. Patton, J.H. Comfort et al. IEEE Electron Device Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G.L. Patton United States	18	1.6k	760	393	171	73	46	1.7k
E. D. Marshall United States	17	804 0.5×	772 1.0×	107 0.3×	73 0.4×	67 0.9×	37	960
L. C. Kimerling United States	16	1.1k 0.7×	556 0.7×	345 0.9×	151 0.9×	114 1.6×	47	1.2k
P. Rugheimer United States	10	274 0.2×	317 0.4×	121 0.3×	149 0.9×	27 0.4×	23	515
C. A. King United States	15	901 0.6×	585 0.8×	290 0.7×	109 0.6×	59 0.8×	54	1.0k
V. P. Kesan United States	18	889 0.6×	702 0.9×	315 0.8×	143 0.8×	37 0.5×	69	1.1k
H. Jorke Germany	18	1.3k 0.8×	948 1.2×	533 1.4×	207 1.2×	159 2.2×	55	1.5k
R. A. A. Kubiak United Kingdom	18	806 0.5×	543 0.7×	411 1.0×	221 1.3×	135 1.8×	69	994
Niclas Carlsson Sweden	10	347 0.2×	466 0.6×	205 0.5×	75 0.4×	10 0.1×	26	569
Jacob Fage-Pedersen Denmark	15	1.3k 0.9×	1.1k 1.4×	329 0.8×	309 1.8×	66 0.9×	30	1.5k
M. Quillec France	16	746 0.5×	782 1.0×	264 0.7×	85 0.5×	38 0.5×	61	982

Countries citing papers authored by G.L. Patton

Since Specialization

Citations

This map shows the geographic impact of G.L. Patton's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.L. Patton with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.L. Patton more than expected).

Fields of papers citing papers by G.L. Patton

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.L. Patton. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.L. Patton. The network helps show where G.L. Patton may publish in the future.

Co-authorship network of co-authors of G.L. Patton

This figure shows the co-authorship network connecting the top 25 collaborators of G.L. Patton. A scholar is included among the top collaborators of G.L. Patton based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G.L. Patton. G.L. Patton is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Stork, J.M.C., G.L. Patton, E.F. Crabbé, et al.. (2003). Design issues for SiGe heterojunction bipolar transistors. 57–64. 1 indexed citations

Harame, D.L., J.M.C. Stork, B.S. Meyerson, et al.. (2002). 30 GHz polysilicon-emitter and single-crystal-emitter graded SiGe-base PNP transistors. 33–36. 1 indexed citations

Chuang, C.T., Ken K. Chin, J.M.C. Stork, et al.. (2002). On the leverage of high f/sub T/ transistors for advanced high-speed bipolar circuits. 142–145. 2 indexed citations

Crabbé, E.F., G.L. Patton, J.M.C. Stork, et al.. (2002). Low temperature operation of Si and SiGe bipolar transistors. 17–20. 7 indexed citations

Patton, G.L., J.M.C. Stork, J.H. Comfort, et al.. (2002). SiGe-base heterojunction bipolar transistors: physics and design issues. 13–16. 7 indexed citations

Kobeda, E., J. Gambino, G.L. Patton, et al.. (1993). Fabrication of Tungsten Local Interconnect for VLSI Bipolar Technology. Journal of The Electrochemical Society. 140(10). 3007–3013. 3 indexed citations

Crabbé, E.F., John D. Cressler, G.L. Patton, et al.. (1993). Current gain rolloff in graded-base SiGe heterojunction bipolar transistors. IEEE Electron Device Letters. 14(4). 193–195. 29 indexed citations

Arienzo, M., J.H. Comfort, E.F. Crabbé, et al.. (1992). SiGe Heterojunctions Transistors and Optoelectronic Devices. MRS Proceedings. 281. 2 indexed citations

Chuang, C.T., Ken K. Chin, J.M.C. Stork, et al.. (1992). On the leverage of high-f/sub T/ transistors for advanced high-speed bipolar circuits. IEEE Journal of Solid-State Circuits. 27(2). 225–228. 11 indexed citations

10.

Arienzo, M., J.H. Comfort, E.F. Crabbé, et al.. (1991). SiGe Heterojunction Bipolar Transistors. MRS Proceedings. 220. 9 indexed citations

11.

Ganin, E., B.S. Meyerson, John D. Cressler, et al.. (1991). Submicrometer Si and Si-Ge epitaxial-base double-poly self-aligned bipolar transistors. IEEE Transactions on Electron Devices. 38(4). 941–943. 3 indexed citations

12.

Cressler, John D., J.H. Comfort, E.F. Crabbé, et al.. (1991). Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors. IEEE Electron Device Letters. 12(4). 166–168. 30 indexed citations

13.

Iyer, Subramanian S., G.L. Patton, D.L. Harame, et al.. (1990). Narrow band gap base heterojunction bipolar transistors using SiGe alloys. Thin Solid Films. 184(1-2). 153–162. 6 indexed citations

14.

Burghartz, Joachim N., J.H. Comfort, G.L. Patton, et al.. (1990). Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology. IEEE Electron Device Letters. 11(7). 288–290. 25 indexed citations

15.

Harame, D.L., J.M.C. Stork, B.S. Meyerson, et al.. (1990). SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process. 47–48. 10 indexed citations

16.

Iyer, Subramanian S., G.L. Patton, J.M.C. Stork, B.S. Meyerson, & D.L. Harame. (1989). Heterojunction bipolar transistors using Si-Ge alloys. IEEE Transactions on Electron Devices. 36(10). 2043–2064. 296 indexed citations

17.

Stork, J.M.C., E. Ganin, John D. Cressler, G.L. Patton, & G.A. Sai-Halasz. (1987). Electrical and microstructural investigation of polysilicon emitter contacts for high-performance bipolar VLSI. IBM Journal of Research and Development. 31(6). 617–626. 5 indexed citations

18.

Patton, G.L., J. C. Bravman, & J.D. Plummer. (1986). Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors. IEEE Transactions on Electron Devices. 33(11). 1754–1768. 118 indexed citations

19.

Bravman, J. C., G.L. Patton, & J.D. Plummer. (1985). Structure and morphology of polycrystalline silicon-single crystal silicon interfaces. Journal of Applied Physics. 57(8). 2779–2782. 48 indexed citations

20.

Patton, G.L., J. C. Bravman, & J.D. Plummer. (1984). Characterization of Bipolar Transistors with Polysilicon Emitter Contacts. 54–55. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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