Dae-Gyu Park

901 total citations
54 papers, 693 citations indexed

About

Dae-Gyu Park is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials. According to data from OpenAlex, Dae-Gyu Park has authored 54 papers receiving a total of 693 indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 9 papers in Mechanics of Materials. Recurrent topics in Dae-Gyu Park's work include Semiconductor materials and devices (48 papers), Semiconductor materials and interfaces (23 papers) and Advancements in Semiconductor Devices and Circuit Design (22 papers). Dae-Gyu Park is often cited by papers focused on Semiconductor materials and devices (48 papers), Semiconductor materials and interfaces (23 papers) and Advancements in Semiconductor Devices and Circuit Design (22 papers). Dae-Gyu Park collaborates with scholars based in United States, South Korea and Japan. Dae-Gyu Park's co-authors include In‐Seok Yeo, Jae-Sung Roh, Kwan-Yong Lim, Jin Won Park, S. Noor Mohammad, E. Leobandung, Wilfried Haensch, H. Morkoç, H. Morkoç̌ and J. A. Ott and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Dae-Gyu Park

51 papers receiving 653 citations

Peers

Countries citing papers authored by Dae-Gyu Park

Since Specialization

Citations

This map shows the geographic impact of Dae-Gyu Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dae-Gyu Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dae-Gyu Park more than expected).

Fields of papers citing papers by Dae-Gyu Park

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dae-Gyu Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dae-Gyu Park. The network helps show where Dae-Gyu Park may publish in the future.

Co-authorship network of co-authors of Dae-Gyu Park

This figure shows the co-authorship network connecting the top 25 collaborators of Dae-Gyu Park. A scholar is included among the top collaborators of Dae-Gyu Park based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dae-Gyu Park. Dae-Gyu Park is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	First demonstration of high-Ge-content strained-Si<inf>1−x</inf>Ge<inf>x</inf> (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications 2014 ·Pouya Hashemi, Karthik Balakrishnan, Sebastian Engelmann, J. A. Ott, A. Khakifirooz, Ashish Baraskar, Marinus Hopstaken, J. Newbury, K. Chan, E. Leobandung, (unknown), Dae-Gyu Park	22
2	On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors 2014 ·IEEE Journal of the Electron Devices Society ·Jin Cai, T.H. Ning, C. D’Emic, Jeng-Bang Yau, K. Chan, (unknown), R. Muralidhar, Dae-Gyu Park	16
3	Strained Si<inf>1−x</inf>Ge<inf>x</inf>-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond 2014 ·Pouya Hashemi, Karthik Balakrishnan, Amlan Majumdar, A. Khakifirooz, Wanki Kim, Ashish Baraskar, (unknown), (unknown), (unknown), J. A. Ott, D.A. Antoniadis, E. Leobandung, Dae-Gyu Park	16
4	A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices 2012 ·IEEE Electron Device Letters ·R. Muralidhar, Jin Cai, Isaac Lauer, K. Chan, (unknown), Younghee Kim, Zhibin Ren, Dae-Gyu Park, Phil Oldiges, G. Shahidi	5
5	Impact of HK / MG stacks and future device scaling on RTN 2011 ·Naoki Tega, Hiroshi Miki, Zhibin Ren, C. D’Emic, Yu Zhu, D.J. Frank, Michael Guillorn, Dae-Gyu Park, Wilfried Haensch, Kazuyoshi Torii	14
6	Hysteretic drain-current behavior due to random telegraph noise in Scaled-down FETs with high-κ/metal-gate stacks 2010 ·Hiroshi Miki, Naoki Tega, Zhibin Ren, C. D’Emic, Yu Zhu, D.J. Frank, Michael Guillorn, Dae-Gyu Park, Wilfried Haensch, Kazuyoshi Torii	9
7	Will SOI have a life for the low-power market? 2008 ·Jin Cai, Zhibin Ren, Amlan Majumdar, T.H. Ning, (unknown), Dae-Gyu Park, Wilfried Haensch	6
8	Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures 2002 ·Applied Physics Letters ·Dae-Gyu Park, Kwan-Yong Lim, (unknown), (unknown), In‐Seok Yeo, Jae-Sung Roh, (unknown)	43
9	Reliability Characteristics of W/WN/TaO[sub x]N[sub y]/SiO[sub 2]/Si Metal Oxide Semiconductor Capacitors 2002 ·Journal of The Electrochemical Society ·(unknown), (unknown), Kwan-Yong Lim, Dae-Gyu Park, Jae-Young Kim, (unknown), Sung Heo, In‐Seok Yeo, Jin Won Park	6
10	Ultrathin nitrided-nanolaminate (Al2O3/ZrO2/Al2O3) for metal–oxide–semiconductor gate dielectric applications 2002 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Sanghun Jeon, (unknown), Hyo Sik Chang, Dae-Gyu Park, Hyunsang Hwang	2
11	Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability 2001 ·Japanese Journal of Applied Physics ·(unknown), Dae-Gyu Park, In‐Seok Yeo, Jae-Sung Roh, (unknown)	23
12	Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor 2001 ·Journal of Applied Physics ·Dae-Gyu Park, (unknown), Kwan-Yong Lim, (unknown), In‐Seok Yeo, Jae-Sung Roh, Jin Won Park	70
13	Effects of TiN Deposition on the Characteristics of W/TiN/SiO[sub 2]/Si Metal Oxide Semiconductor Capacitors 2001 ·Journal of The Electrochemical Society ·Dae-Gyu Park, (unknown), Kwan-Yong Lim, (unknown), In‐Seok Yeo, Jin Won Park	13
14	Boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor system 2000 ·Applied Physics Letters ·Dae-Gyu Park, (unknown), In‐Seok Yeo, Jae-Sung Roh, (unknown)	35
15	Interface characterization of Si3N4/Si/GaAs heterostructures after high temperature annealing 1998 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Dae-Gyu Park, Zhonghui Wang, H. Morkoç̌, Samuel A. Alterovitz, David J. Smith, S.-C. Y. Tsen	5
16	Characteristics of Si3N4/GaAs metal-lnsulator-semiconductor interfaces with coherent Si/Al0.3Ga0.7As interlayers 1997 ·Journal of Electronic Materials ·Dae-Gyu Park, (unknown), H. Morkoç	2
17	On the inversion in GaAs metal-insulator-semiconductor heterostructures 1997 ·Applied Physics Letters ·Zhi Chen, S. Noor Mohammad, Dae-Gyu Park, H. Morkoç̌, Yia‐Chung Chang	3
18	Interface properties of Si₃N₄Si/n-GaAs metal-msulator-semiconductor structure using a Si interlayer 1996 ·Philosophical Magazine B ·Dae-Gyu Park, Zhi Chen, A. Botchkarev, S. Noor Mohammad, H. Morkoç̌	15
19	Characteristics of Si3N4/Si/n-GaAs metal-insulator-semiconductor interfaces grown on GaAs(111)B substrate 1996 ·Applied Physics Letters ·Dae-Gyu Park, (unknown), Zhi Chen, S. Noor Mohammad, H. Morkoç	10
20	Measurement of Surface Area from Permeametry 1978 ·Korean Journal of Chemical Engineering ·(unknown), Dae-Gyu Park	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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