J. Newbury

1.4k total citations
13 papers, 540 citations indexed

About

J. Newbury is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Newbury has authored 13 papers receiving a total of 540 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 6 papers in Biomedical Engineering and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Newbury's work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Nanowire Synthesis and Applications (5 papers). J. Newbury is often cited by papers focused on Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Nanowire Synthesis and Applications (5 papers). J. Newbury collaborates with scholars based in United States, Japan and France. J. Newbury's co-authors include J.W. Sleight, A. Majumdar, G. M. Cohen, Sarunya Bangsaruntip, Lynne Gignac, Michael Guillorn, Y. Zhang, Martin M. Frank, Nicholas Fuller and S. Mittal and has published in prestigious journals such as ECS Transactions and Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.

In The Last Decade

J. Newbury

13 papers receiving 523 citations

Peers

J. Newbury

EEE

AMPO

EOMM

Elvedin Memišević Sweden

Cáit Ní Chléirigh United States

J.P. Colinge Belgium

Nicolas Daval France

E. Ungersboeck Austria

T. Kanarsky United States

K. Schruefer United States

F. Andrieu France

C. Comboroure France

Elvedin Memišević Sweden

J. Newbury

598 ×1.1

EEE

284 ×1.7

88 ×1.4

AMPO

50 ×1.1

6 ×1.0

EOMM

Citations per year, relative to J. Newbury J. Newbury (= 1×) peers Elvedin Memišević

Countries citing papers authored by J. Newbury

Since Specialization

Citations

This map shows the geographic impact of J. Newbury's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Newbury with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Newbury more than expected).

Fields of papers citing papers by J. Newbury

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Newbury. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Newbury. The network helps show where J. Newbury may publish in the future.

Co-authorship network of co-authors of J. Newbury

This figure shows the co-authorship network connecting the top 25 collaborators of J. Newbury. A scholar is included among the top collaborators of J. Newbury based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Newbury. J. Newbury is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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13 of 13 papers shown

Hashemi, Pouya, Karthik Balakrishnan, Sebastian Engelmann, et al.. (2014). First demonstration of high-Ge-content strained-Si<inf>1−x</inf>Ge<inf>x</inf> (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications. 16.1.1–16.1.4. 22 indexed citations

Bangsaruntip, Sarunya, Karthik Balakrishnan, Josephine Chang, et al.. (2013). Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond. 20.2.1–20.2.4. 79 indexed citations

Sleight, J.W., Sarunya Bangsaruntip, G. M. Cohen, et al.. (2010). (Invited) High Performance and Highly Uniform Metal Hi-K Gate-All-Around Silicon Nanowire MOSFETs. ECS Transactions. 28(1). 179–189. 1 indexed citations

Sleight, J.W., Sarunya Bangsaruntip, A. Majumdar, et al.. (2010). Gate-all-around silicon nanowire MOSFETs and circuits. 269–272. 7 indexed citations

Patel, J., Maxime Darnon, A. Pyzyna, et al.. (2009). Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(6). 2588–2592. 10 indexed citations

Bangsaruntip, Sarunya, G. M. Cohen, A. Majumdar, et al.. (2009). High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling. 1–4. 239 indexed citations

Bedell, Stephen W., Nicolas Daval, Keith Fogel, et al.. (2009). Opportunities and Challenges for Germanium and Silicon-Germanium Channel p-FETs. ECS Transactions. 19(1). 155–164. 10 indexed citations

Cartier, E., M. Steen, B.P. Linder, et al.. (2006). pFET V t control with HfO 2 /TiN/poly-Si gate stack using a lateral oxygenation process. 42–43. 1 indexed citations

Gusev, E. P., Vijay Narayanan, Sufi Zafar, et al.. (2005). Charge trapping in aggressively scaled metal gate/high-κ stacks. 729–732. 8 indexed citations

10.

Narayanan, Vijay, J. Newbury, P. Jamison, et al.. (2005). Systematic study of work function engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacks. 4 pp.–645. 18 indexed citations

11.

Shang, Huiling, J. Germán Rubino, B. Doris, et al.. (2005). Mobility and CMOS devices/circuits on sub-10nm [110] ultra thin body SOI. 78–79. 5 indexed citations

12.

Kedzierski, J., D. Boyd, P. Ronsheim, et al.. (2004). Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS). 13.3.1–13.3.4. 40 indexed citations

13.

Rim, K., J. O. Chu, H. Chen, et al.. (2003). Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs. 98–99. 100 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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