E.F. Crabbé

5.0k citations

72 papers · 3.5k indexed · 2 hit papers · h-index 23

Electrical and Electronic Engineering top 1%
- Advancements in Semiconductor Devices and Circuit Design 52
- Semiconductor materials and devices 49
- Radio Frequency Integrated Circuit Design 16
- Silicon Carbide Semiconductor Technologies 11
- Integrated Circuits and Semiconductor Failure Analysis 10
- Photonic and Optical Devices 7
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices 13
- Semiconductor materials and interfaces 8
Materials Chemistry top 5%
Biomedical Engineering top 5%
Structural Biology

Co-authors: A. Hartstein Sandip Tiwari Farhan Rana B.S. Meyerson J.H. Comfort D.L. Harame J.M.C. Stork John D. Cressler
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Materials Chemistry
Journals: IEEE Electron Device Letters (11 papers)IEEE Transactions on Electron Devices (9 papers)Applied Physics Letters (2 papers)
Partner nations: United States Italy South Korea

In The Last Decade

E.F. Crabbé

71 papers receiving 3.3k citations

Hit Papers

align trajectories log scale

Peers

Countries citing papers authored by E.F. Crabbé

Since Specialization

Citations

This map shows the geographic impact of E.F. Crabbé's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E.F. Crabbé with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E.F. Crabbé more than expected).

Fields of papers citing papers by E.F. Crabbé

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E.F. Crabbé. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E.F. Crabbé. The network helps show where E.F. Crabbé may publish in the future.

Co-authorship network

The 25 scholars most cited alongside E.F. Crabbé, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E.F. Crabbé Line = papers co-authored together E.F. Crabbé links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Design and Analysis of Discrete FET Monitors in 7nm FinFET Product for Robust Technology Validation R. Dulio,N. Zamdmer,Anja Samardžić,K. Onishi,D. Chidambarrao,智洋大石,Trần Vũ,Wei Cui,J.H. Sim,M. Angyal,E.F. Crabbé	2023	0
2	45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications IBM Journal of Research and Development ·Subramanian S. Iyer,G. Freeman,Quentin Suzanne,A. Chou,Dan Corliss,Sedegh Taghiloo,N. Lustig,V. McGahay,Tosihide H. YOSIDA,雄二熊谷,Karen Nummy,P. Parries,S. Sankaran,C. Sheraw,Pushkara R. Varanasi,Taeko Nagareda,M. Weybright,X. Yu,E.F. Crabbé,P. Agnello	2011	13
3	Vertical pass transistor design for sub-100 nm DRAM technologies K. McStay,D. Chidambarrao,J. Mandelman,Heath Harrison,H. Tews,M. Weybright,زيزى حسن عمر,Jiban Nath,S Sarman,R. Divakaruni,W. Bergner,E.F. Crabbé,G. Bronner,Wolfgang Mueller	2003	2
4	Asymmetry in effective-channel length of n- and p-MOSFETs Wang Zhao-yua,Yuan Taur,E.F. Crabbé	2002	1
5	Phase edge lithography for sub 0.1 μm electrical channel length in a 200 mm full CMOS process P. Agnello,Thomas H. Newman,E.F. Crabbé,S. Subbanna,E. Ganin,Lars W. Liebmann,J.H. Comfort,D.A. Sunderland	2002	2
6	30 GHz polysilicon-emitter and single-crystal-emitter graded SiGe-base PNP transistors D.L. Harame,J.M.C. Stork,B.S. Meyerson,E.F. Crabbé,G. Scilla,E. de Frésart,Louise M. Allison,C. Stanis,G.L. Patton,J.H. Comfort,A. A. Bright,Jeffrey B. Johnson,S. Furkay	2002	1
7	NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies Giuseppe La Rosa,F Guarin,Stewart E. Rauch,A. Acovic,Chang Jian-ping,E.F. Crabbé	2002	76
8	On the leverage of high f/sub T/ transistors for advanced high-speed bipolar circuits C.T. Chuang,Ken K. Chin,J.M.C. Stork,G.L. Patton,E.F. Crabbé,J.H. Comfort	2002	2
9	Low temperature operation of Si and SiGe bipolar transistors E.F. Crabbé,G.L. Patton,J.M.C. Stork,J.H. Comfort,B.S. Meyerson,J.Y.-C. Sun	2002	7
10	SiGe-base heterojunction bipolar transistors: physics and design issues G.L. Patton,J.M.C. Stork,J.H. Comfort,E.F. Crabbé,B.S. Meyerson,D.L. Harame,J.Y.-C. Sun	2002	7
11	<title>X-ray exposure in the manufacture of sub-150-nm gate lines</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·János Matuz,P. Agnello,E.F. Crabbé,Chih,James Oberschmidt,Z Weng,Zazueta	1996	2
12	Si/Si/sub 1-x/Ge/sub x/ valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure IEEE Transactions on Electron Devices ·I. Monteaudo,Jesús A. del Alamo,B. R. Bennett,B.S. Meyerson,E.F. Crabbé,C.G. Sodini,Christine Hobelsberger	1994	13
13	<title>Liquid-helium temperature operation of silicon-germanium heterojunction bipolar transistors</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·John D. Cressler,Alvin Joseph,J Roy-Montreuil,J.H. Comfort,D.L. Harame,E.F. Crabbé,J.M.C. Stork	1994	1
14	Low-temperature operation of SiGe p-n-p HBTs IEEE Transactions on Electron Devices ·E.F. Crabbé,D.L. Harame,B.S. Meyerson,J.M.C. Stork,J.Y.-C. Sun	1992	2
15	SiGe Heterojunction Bipolar Transistors MRS Proceedings ·M. Arienzo,J.H. Comfort,E.F. Crabbé,Κ. Αναστασιάδης,Subramanian S. Iyer,B.S. Meyerson,G.L. Patton,J.M.C. Stork,Michael J. Giomi	1991	9
16	Narrow band gap base heterojunction bipolar transistors using SiGe alloys Thin Solid Films ·Subramanian S. Iyer,G.L. Patton,D.L. Harame,J.M.C. Stork,E.F. Crabbé,B.S. Meyerson	1990	6
17	SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process D.L. Harame,J.M.C. Stork,B.S. Meyerson,E.F. Crabbé,G.L. Patton,G. Scilla,E. de Frésart,A. A. Bright,C. Stanis,A.C. Megdanis,Muhammad Huzaifa,Naveed Ahmad Khan,Tooba Gull,Muhammad Abbas Dilawar,Muhammad Abdullah,E. Petrillo,Saad El,Ranja Danielsen,K. Chan	1990	10
18	Reduced Process Sensitivity of Polysilicon Emitter Contacts for VLSI Bipolar Transistors Symposium on VLSI Technology ·E.F. Crabbé,Judy L. Hoyt,Masoud Moslehi,R. F. W. Pease,J. F. Gibbons	1987	2
19	Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films MRS Proceedings ·Judy L. Hoyt,E.F. Crabbé,R. F. W. Pease,J. F. Gibbons	1987	1
20	Epitaxial alignment of arsenic implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing Applied Physics Letters ·Judy L. Hoyt,E.F. Crabbé,J. F. Gibbons,R. F. W. Pease	1987	24

About E.F. Crabbé

E.F. Crabbé is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Media Technology, having authored 72 papers that have together received 3.5k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (52 papers), Semiconductor materials and devices (49 papers), Radio Frequency Integrated Circuit Design (16 papers), Semiconductor Quantum Structures and Devices (13 papers), Silicon Carbide Semiconductor Technologies (11 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Semiconductor materials and interfaces (8 papers) and Photonic and Optical Devices (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.3k citations), Atomic and Molecular Physics, and Optics (1.0k citations) and Materials Chemistry (1.2k citations). E.F. Crabbé has collaborated with scholars based in United States, Italy and South Korea. Frequent co-authors include A. Hartstein, Sandip Tiwari, Farhan Rana, B.S. Meyerson, J.H. Comfort, D.L. Harame, J.M.C. Stork, John D. Cressler, J.Y.-C. Sun and G.L. Patton. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, IBM Journal of Research and Development and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact