Phil Oldiges

2.4k total citations
40 papers, 879 citations indexed

About

Phil Oldiges is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Phil Oldiges has authored 40 papers receiving a total of 879 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 6 papers in Hardware and Architecture and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Phil Oldiges's work include Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers) and Radiation Effects in Electronics (14 papers). Phil Oldiges is often cited by papers focused on Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers) and Radiation Effects in Electronics (14 papers). Phil Oldiges collaborates with scholars based in United States, India and Singapore. Phil Oldiges's co-authors include J. Kedzierski, M. Ieong, Edwin C. Kan, Guangsheng Pei, Kenneth P. Rodbell, Michael S. Gordon, David F. Heidel, Henry H. K. Tang, Conal E. Murray and Isaac Lauer and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and IEEE Access.

In The Last Decade

Phil Oldiges

37 papers receiving 834 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Phil Oldiges United States 14 856 116 103 53 46 40 879
O. Musseau France 18 1.0k 1.2× 179 1.5× 42 0.4× 80 1.5× 20 0.4× 64 1.1k
L. Artola France 17 909 1.1× 234 2.0× 43 0.4× 104 2.0× 32 0.7× 60 1.0k
S. Kuboyama Japan 19 1.1k 1.3× 151 1.3× 24 0.2× 50 0.9× 66 1.4× 72 1.2k
R.L. Pease United States 14 814 1.0× 176 1.5× 41 0.4× 41 0.8× 28 0.6× 28 845
James A. Felix United States 7 806 0.9× 87 0.8× 21 0.2× 85 1.6× 23 0.5× 14 838
J.L. Autran France 12 540 0.6× 54 0.5× 64 0.6× 69 1.3× 81 1.8× 42 558
Scot E. Swanson United States 12 367 0.4× 24 0.2× 33 0.3× 26 0.5× 61 1.3× 29 392
O. Flament France 20 989 1.2× 121 1.0× 19 0.2× 50 0.9× 18 0.4× 61 1.0k
Antoine Touboul France 14 597 0.7× 106 0.9× 17 0.2× 68 1.3× 41 0.9× 66 643
J. Boch France 21 1.0k 1.2× 169 1.5× 19 0.2× 42 0.8× 20 0.4× 92 1.1k

Countries citing papers authored by Phil Oldiges

Since Specialization
Citations

This map shows the geographic impact of Phil Oldiges's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Phil Oldiges with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Phil Oldiges more than expected).

Fields of papers citing papers by Phil Oldiges

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Phil Oldiges. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Phil Oldiges. The network helps show where Phil Oldiges may publish in the future.

Co-authorship network of co-authors of Phil Oldiges

This figure shows the co-authorship network connecting the top 25 collaborators of Phil Oldiges. A scholar is included among the top collaborators of Phil Oldiges based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Phil Oldiges. Phil Oldiges is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dodds, Nathaniel A., Keshab Sapkota, Phil Oldiges, et al.. (2025). TID Response of IBM Gate-All-Around Stacked Nanosheet Transistors. IEEE Transactions on Nuclear Science. 72(8). 2303–2310. 2 indexed citations
2.
Dodds, Nathaniel A., Phil Oldiges, Keshab Sapkota, et al.. (2025). Impact of 12-nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level. IEEE Transactions on Nuclear Science. 72(4). 1268–1275.
3.
Dodds, Nathaniel A., Phil Oldiges, B. Dodd, et al.. (2024). The Effects of Threshold Voltage and Number of Fins Per Transistor on the TID Response of GF 12LP Technology. IEEE Transactions on Nuclear Science. 71(4). 477–484. 5 indexed citations
4.
Oldiges, Phil, et al.. (2020). Chip Power-Frequency Scaling in 10/7nm Node. IEEE Access. 8. 154329–154337. 19 indexed citations
5.
Oldiges, Phil, et al.. (2019). Impact of heater configuration on Reset characteristics of PCM Mushroom cell. 1–6. 2 indexed citations
6.
Rodbell, Kenneth P., Michael S. Gordon, Kevin Stawiasz, et al.. (2017). Low Energy Proton SEUs in 32-nm SOI SRAMs at Low Vdd. IEEE Transactions on Nuclear Science. 64(3). 999–1005. 11 indexed citations
7.
8.
Agarwal, Samarth, Mohit Bajaj, Jeffrey B. Johnson, et al.. (2014). Finite element based three dimensional Schrödinger solver for nano-scale devices. Journal of Computational Electronics. 14(1). 163–166. 1 indexed citations
9.
Muralidhar, R., Jin Cai, Isaac Lauer, et al.. (2012). A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices. IEEE Electron Device Letters. 33(6). 776–778. 5 indexed citations
10.
Lin, Chung-Hsun, Wilfried Haensch, Phil Oldiges, et al.. (2011). Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond. Symposium on VLSI Technology. 16–17. 22 indexed citations
11.
Gribelyuk, M., et al.. (2011). Suppression of boron diffusion in deep submicron devices. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(6). 62201–62201. 5 indexed citations
12.
Oldiges, Phil, et al.. (2010). Characterization of Parasitic Bipolar Transistors in 45 nm Silicon-on-Insulator Technology. IEEE Transactions on Nuclear Science. 3 indexed citations
13.
Oldiges, Phil, R.H. Dennard, David F. Heidel, et al.. (2009). Technologies to further reduce soft error susceptibility in SOI. 93. 1–4. 12 indexed citations
14.
KleinOsowski, A.J., et al.. (2008). Design Implications of Single Event Transients in a Commercial 45 nm SOI Device Technology. IEEE Transactions on Nuclear Science. 55(6). 3461–3466. 7 indexed citations
15.
KleinOsowski, A.J., Ethan H. Cannon, Michael S. Gordon, et al.. (2007). Latch Design Techniques for Mitigating Single Event Upsets in 65 nm SOI Device Technology. IEEE Transactions on Nuclear Science. 54(6). 2021–2027. 7 indexed citations
16.
Rodbell, Kenneth P., David F. Heidel, Henry H. K. Tang, et al.. (2007). Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells. IEEE Transactions on Nuclear Science. 54(6). 2474–2479. 151 indexed citations
17.
Heidel, David F., Kenneth P. Rodbell, Phil Oldiges, et al.. (2006). Single-Event-Upset Critical Charge Measurements and Modeling of 65 nm Silicon-on-Insulator Latches and Memory Cells. IEEE Transactions on Nuclear Science. 53(6). 3512–3517. 37 indexed citations
18.
19.
Cai, J., A. Ajmera, Phil Oldiges, et al.. (2003). Fully-depleted-collector polysilicon-emitter SiGe-base vertical bipolar transistor on SOI. 172–173. 12 indexed citations
20.
Fung, S.K.H., N. Zamdmer, Phil Oldiges, et al.. (2002). Controlling floating-body effects for 0.13 μm and 0.10 μm SOI CMOS. 231–234. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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