Jin Cai

1.0k total citations
47 papers, 709 citations indexed

About

Jin Cai is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Jin Cai has authored 47 papers receiving a total of 709 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Jin Cai's work include Advancements in Semiconductor Devices and Circuit Design (37 papers), Semiconductor materials and devices (36 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). Jin Cai is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (37 papers), Semiconductor materials and devices (36 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). Jin Cai collaborates with scholars based in United States, Taiwan and China. Jin Cai's co-authors include Chih‐Tang Sah, T.H. Ning, Isaac Lauer, R.H. Dennard, Arvind Kumar, Steven J. Koester, Dennis Sylvester, David Blaauw, Leland Chang and Daeyeon Kim and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Jin Cai

45 papers receiving 678 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Jin Cai United States	15	638	133	106	67	22	47	709
R. Ritzenthaler Belgium	17	1.1k 1.7×	83 0.6×	116 1.1×	76 1.1×	14 0.6×	121	1.1k
Chenming Hu United States	9	530 0.8×	180 1.4×	83 0.8×	60 0.9×	18 0.8×	13	548
Vita Pi‐Ho Hu Taiwan	20	1.1k 1.7×	130 1.0×	120 1.1×	36 0.5×	53 2.4×	116	1.1k
Ankit Jain United States	9	571 0.9×	103 0.8×	72 0.7×	79 1.2×	17 0.8×	17	594
A. Bryant United States	6	511 0.8×	77 0.6×	122 1.2×	57 0.9×	46 2.1×	8	562
J. Johnson United States	6	465 0.7×	83 0.6×	80 0.8×	72 1.1×	16 0.7×	17	510
M. Togo Japan	14	599 0.9×	66 0.5×	69 0.7×	62 0.9×	18 0.8×	68	619
Trong Huynh-Bao Belgium	13	636 1.0×	56 0.4×	182 1.7×	70 1.0×	46 2.1×	23	678
Olivier Faynot France	15	821 1.3×	44 0.3×	122 1.2×	27 0.4×	24 1.1×	80	841
C. Tabone France	18	1.1k 1.7×	63 0.5×	292 2.8×	87 1.3×	16 0.7×	58	1.1k

Countries citing papers authored by Jin Cai

Since Specialization

Citations

This map shows the geographic impact of Jin Cai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jin Cai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jin Cai more than expected).

Fields of papers citing papers by Jin Cai

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jin Cai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jin Cai. The network helps show where Jin Cai may publish in the future.

Co-authorship network of co-authors of Jin Cai

This figure shows the co-authorship network connecting the top 25 collaborators of Jin Cai. A scholar is included among the top collaborators of Jin Cai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jin Cai. Jin Cai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Sathaiya, D. Mahaveer, Edward Chen, Chen-Feng Hsu, et al.. (2024). On the Extreme Scaling of Transistors with Monolayer MOS2 Channel. 1–2. 6 indexed citations

Cai, Jin, et al.. (2023). Evaluation of the Air Leakage Flowrate in Sintering Processes. Fluid dynamics & materials processing. 19(11). 2791–2812.

Sathaiya, D. Mahaveer, Goutham Arutchelvan, Chen-Feng Hsu, et al.. (2023). Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS ₂ Channel Transistors. IEEE Transactions on Electron Devices. 70(12). 6680–6686. 6 indexed citations

Cai, Jin, et al.. (2022). Mathematical Modeling of Sintering Air Leakage through Holes. Energies. 15(12). 4224–4224. 2 indexed citations

Su, Sheng‐Kai, Edward Chen, Mengzhan Li, et al.. (2022). Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 403–404. 22 indexed citations

Wu, Jingtao, et al.. (2021). Research on High-Temperature Cooling Flight Test Technology of a Certain Type of Civil Aircraft Generator. Journal of Physics Conference Series. 2136(1). 12018–12018.

Chen, Yi‐Chun, Chengxi Liu, Jin Cai, et al.. (2021). Design Technology Co-Optimization for Cold CMOS Benefits in Advanced Technologies. 2021 IEEE International Electron Devices Meeting (IEDM). 13.2.1–13.2.4. 9 indexed citations

Chuu, Chih‐Piao, Yun-Yan Chung, Ang‐Sheng Chou, et al.. (2020). Pinning-Free Edge Contact Monolayer MoS₂ FET. 3.3.1–3.3.4. 16 indexed citations

Yau, Jeng-Bang, Jin Cai, & T.H. Ning. (2016). Substrate-Voltage Modulation of Currents in Symmetric SOI Lateral Bipolar Transistors. IEEE Transactions on Electron Devices. 63(5). 1835–1839. 7 indexed citations

10.

Cai, Jin, T.H. Ning, C. D’Emic, et al.. (2014). On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors. IEEE Journal of the Electron Devices Society. 2(5). 105–113. 16 indexed citations

11.

Muralidhar, R., Jin Cai, Isaac Lauer, et al.. (2012). A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices. IEEE Electron Device Letters. 33(6). 776–778. 5 indexed citations

12.

Khakifirooz, A., Kangguo Cheng, Jin Cai, et al.. (2011). High-Performance Partially Depleted SOI PFETs With In Situ Doped SiGe Raised Source/Drain and Implant-Free Extension. IEEE Electron Device Letters. 32(3). 267–269. 14 indexed citations

13.

Yau, Jeng-Bang, Jin Cai, R.H. Dennard, et al.. (2009). FDSOI CMOS with dual backgate control for performance and power modulation. 84–85. 2 indexed citations

14.

Cai, Jin, Zhibin Ren, Amlan Majumdar, et al.. (2008). Will SOI have a life for the low-power market?. 70. 15–16. 6 indexed citations

15.

Cai, Jin, et al.. (2007). Ultra-Low Leakage Silicon-on-Insulator Technology for 65 nm Node and Beyond. 907–910. 2 indexed citations

16.

Bellini, Marco, John D. Cressler, & Jin Cai. (2007). Assessing the High-Temperature Capabilities of SiGe HBTs Fabricated on CMOS-compatible Thin-film SOI. 27. 234–237. 2 indexed citations

17.

Bellini, Marco, et al.. (2006). Reliability Issues in SiGe HBTs Fabricated on CMOS-Compatible Thin-Film SOI. 5. 1–4. 1 indexed citations

18.

Sutton, Akil K., Marco Bellini, B.M. Haugerud, et al.. (2005). Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI. IEEE Transactions on Nuclear Science. 52(6). 2353–2357. 16 indexed citations

19.

Ouyang, Q., Jin Cai, T.H. Ning, P. Oldiges, & J. Johnson. (2003). A simulation study on thin SOI bipolar transistors with fully or partially depleted collector. 28–31. 16 indexed citations

20.

Cai, Jin, et al.. (2003). Supply voltage strategies for minimizing the power of CMOS processors. 102–103. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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