R. K. Pandey

759 total citations
43 papers, 583 citations indexed

About

R. K. Pandey is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. K. Pandey has authored 43 papers receiving a total of 583 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. K. Pandey's work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Ferroelectric and Negative Capacitance Devices (5 papers). R. K. Pandey is often cited by papers focused on Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Ferroelectric and Negative Capacitance Devices (5 papers). R. K. Pandey collaborates with scholars based in India, United States and Germany. R. K. Pandey's co-authors include K. V. R. M. Murali, Mohit Bajaj, Suresh Gundapaneni, Anil Kottantharayil, Swaroop Ganguly, John M. Vail, Sandip De, Manoj K. Harbola, Souvik Mahapatra and Subhadeep Mukhopadhyay and has published in prestigious journals such as The Journal of Chemical Physics, Physical review. B, Condensed matter and Journal of Applied Physics.

In The Last Decade

R. K. Pandey

42 papers receiving 555 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. K. Pandey India 11 463 129 120 79 30 43 583
Thomas F. Harrelson United States 9 307 0.7× 117 0.9× 45 0.4× 38 0.5× 56 1.9× 11 379
V.Ya. Bratus Ukraine 9 227 0.5× 183 1.4× 71 0.6× 65 0.8× 48 1.6× 35 315
B. P. Singh India 12 154 0.3× 177 1.4× 104 0.9× 58 0.7× 106 3.5× 47 336
Chuang Liu China 10 385 0.8× 432 3.3× 79 0.7× 41 0.5× 70 2.3× 24 534
Tillmann Godde United Kingdom 9 366 0.8× 476 3.7× 184 1.5× 112 1.4× 32 1.1× 11 639
Marina V. Tokina United States 9 257 0.6× 320 2.5× 70 0.6× 26 0.3× 43 1.4× 9 405
Kazuro Murayama Japan 10 235 0.5× 324 2.5× 87 0.7× 108 1.4× 18 0.6× 45 374
F. Batalioto Brazil 11 201 0.4× 170 1.3× 100 0.8× 79 1.0× 63 2.1× 27 373
Adar Levi Israel 11 243 0.5× 187 1.4× 98 0.8× 53 0.7× 28 0.9× 30 352
Alexander Bataller United States 10 418 0.9× 154 1.2× 96 0.8× 36 0.5× 24 0.8× 15 534

Countries citing papers authored by R. K. Pandey

Since Specialization
Citations

This map shows the geographic impact of R. K. Pandey's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. K. Pandey with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. K. Pandey more than expected).

Fields of papers citing papers by R. K. Pandey

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. K. Pandey. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. K. Pandey. The network helps show where R. K. Pandey may publish in the future.

Co-authorship network of co-authors of R. K. Pandey

This figure shows the co-authorship network connecting the top 25 collaborators of R. K. Pandey. A scholar is included among the top collaborators of R. K. Pandey based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. K. Pandey. R. K. Pandey is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Pandey, R. K., et al.. (2025). Impact of Process Variation on DC and Analog Characteristics of 2 nm Forksheet FET. Silicon. 17(6). 1323–1333.
3.
Pandey, R. K., et al.. (2024). Role of Oxygen Vacancy in the Performance Variability and Lattice Temperature of the Stacked Nanosheet FET. IEEE Access. 12. 162565–162580. 1 indexed citations
4.
5.
Pandey, R. K., et al.. (2024). Band-gap tuning in Mn-doped Er2Ti2O7: Insight from the experimental and theoretical approach. Journal of Alloys and Compounds. 997. 174767–174767. 4 indexed citations
6.
Pandey, R. K., et al.. (2023). Effect of Mn doping on the electronic and optical properties of Dy2Ti2O7: a combined spectroscopic and theoretical study. Journal of Physics Condensed Matter. 35(33). 335502–335502. 4 indexed citations
7.
Banik, Soma, et al.. (2019). Role of chemical pressure on optical and electronic structure of Ho 2 Ge x Ti 2− x O 7. Journal of Physics Condensed Matter. 32(11). 115501–115501. 8 indexed citations
8.
Lee, Choonghyun, Richard G. Southwick, P. Jamison, et al.. (2017). Interface engineering of Si<inf>1−x</inf>Ge<inf>x</inf> gate stacks for high performance dual channel CMOS. 36. 573–576. 1 indexed citations
9.
Dixit, Hemant, et al.. (2017). How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?. Journal of Physics D Applied Physics. 50(45). 455103–455103. 9 indexed citations
10.
Dixit, Hemant, Mark Raymond, Vimal Kamineni, et al.. (2017). First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance. IEEE Transactions on Electron Devices. 64(9). 3775–3780. 11 indexed citations
11.
Padilla, Alvaro, Geoffrey W. Burr, Rohit S. Shenoy, et al.. (2015). On the Origin of Steep $I$ –$V$ Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices. IEEE Transactions on Electron Devices. 62(3). 963–971. 7 indexed citations
12.
Goel, Nilesh, Subhadeep Mukhopadhyay, Sandip De, et al.. (2014). A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs. 6A.4.1–6A.4.12. 24 indexed citations
13.
Ulman, Kanchan, et al.. (2013). Dielectric properties of Si3− ξ GeξN4 and Si3−ξCξN4: A density functional study. Journal of Applied Physics. 113(23). 7 indexed citations
14.
Bajaj, Mohit, R. K. Pandey, Sandip De, et al.. (2013). Modeling and Characterization of Gate Leakage in High-K Metal Gate Technology-Based Embedded DRAM. IEEE Transactions on Electron Devices. 60(12). 4152–4158. 5 indexed citations
15.
Cartier, E., Takashi Ando, M. Hopstaken, et al.. (2013). Characterization and optimization of charge trapping in high-k dielectrics. 5A.2.1–5A.2.7. 9 indexed citations
16.
Gundapaneni, Suresh, Mohit Bajaj, R. K. Pandey, et al.. (2012). Effect of Band-to-Band Tunneling on Junctionless Transistors. IEEE Transactions on Electron Devices. 59(4). 1023–1029. 189 indexed citations
17.
Pandey, R. K., K. V. R. M. Murali, S. Furkay, P. Oldiges, & Edward J. Nowak. (2010). Crystallographic-Orientation-Dependent Gate-Induced Drain Leakage in Nanoscale MOSFETs. IEEE Transactions on Electron Devices. 57(9). 2098–2105. 25 indexed citations
18.
Pandey, R. K., Manoj K. Harbola, & Vijay A. Singh. (2003). Scaling of Coulomb and exchange-correlation effects with quantum dot size. Physical review. B, Condensed matter. 67(7). 8 indexed citations
19.
Pandey, R. K., Manoj K. Harbola, V. Ranjan, & Vijay A. Singh. (2003). Many electron effects in semiconductor quantum dots. Bulletin of Materials Science. 26(1). 63–67. 1 indexed citations
20.
Pandey, R. K. & Dharmendra Tripathi. (1992). Rescaled mean spherical approximation structure factor for an aqueous suspension of polystyrene spheres. Pramana. 39(6). 589–595. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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