A. Reznicek

942 total citations
35 papers, 341 citations indexed

About

A. Reznicek is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Reznicek has authored 35 papers receiving a total of 341 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 11 papers in Biomedical Engineering and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Reznicek's work include Semiconductor materials and devices (17 papers), Silicon and Solar Cell Technologies (13 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). A. Reznicek is often cited by papers focused on Semiconductor materials and devices (17 papers), Silicon and Solar Cell Technologies (13 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). A. Reznicek collaborates with scholars based in United States, Germany and Japan. A. Reznicek's co-authors include Thomas Adam, A. I. Epishin, M. Klaus, U. Brückner, T. Link, D. K. Sadana, Keith Fogel, J. A. Ott, Stephen W. Bedell and B. Doris and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. Reznicek

35 papers receiving 333 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Reznicek United States 12 245 87 80 75 58 35 341
Andrew Greene United States 9 161 0.7× 48 0.6× 55 0.7× 53 0.7× 46 0.8× 33 234
Koji Izunome Japan 12 328 1.3× 155 1.8× 102 1.3× 54 0.7× 93 1.6× 69 421
H. Goto Japan 11 222 0.9× 60 0.7× 142 1.8× 26 0.3× 74 1.3× 36 363
Véronique Quintard France 10 206 0.8× 68 0.8× 88 1.1× 34 0.5× 90 1.6× 41 302
M. Laudon United States 7 283 1.2× 44 0.5× 175 2.2× 46 0.6× 123 2.1× 15 365
Yohannes M. Desta United States 10 203 0.8× 28 0.3× 267 3.3× 74 1.0× 40 0.7× 38 371
E. Ganin United States 12 547 2.2× 121 1.4× 75 0.9× 57 0.8× 173 3.0× 31 634
Shigeki Nakao Japan 9 182 0.7× 69 0.8× 210 2.6× 44 0.6× 75 1.3× 15 321
W. Scholz Germany 9 188 0.8× 91 1.0× 194 2.4× 81 1.1× 189 3.3× 19 386
Wan Zhang China 17 619 2.5× 122 1.4× 108 1.4× 117 1.6× 173 3.0× 36 760

Countries citing papers authored by A. Reznicek

Since Specialization
Citations

This map shows the geographic impact of A. Reznicek's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Reznicek with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Reznicek more than expected).

Fields of papers citing papers by A. Reznicek

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Reznicek. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Reznicek. The network helps show where A. Reznicek may publish in the future.

Co-authorship network of co-authors of A. Reznicek

This figure shows the co-authorship network connecting the top 25 collaborators of A. Reznicek. A scholar is included among the top collaborators of A. Reznicek based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Reznicek. A. Reznicek is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Brunco, D.P., Sanjay Raman, Dina H. Triyoso, et al.. (2019). High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs. 251–252. 13 indexed citations
2.
Khakifirooz, A., Kangguo Cheng, Toshiharu Nagumo, et al.. (2013). Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs. IEEE Electron Device Letters. 34(11). 1358–1360. 10 indexed citations
3.
Reznicek, A., Thomas Adam, Jinghong Li, et al.. (2013). (Invited) Microstructure Development in Epitaxially Grown In Situ Boron and Carbon Co-Doped Strained 60% Silicon-Germanium Layers. ECS Transactions. 50(9). 1013–1024. 2 indexed citations
4.
Adam, Thomas, et al.. (2012). Effect of Germanium Concentration on the Dielectric Function of Strained Si1-xGex Films. 1–2. 2 indexed citations
5.
Khakifirooz, A., Kangguo Cheng, Toshiharu Nagumo, et al.. (2012). Extremely thin SOI for system-on-chip applications. 1–4. 4 indexed citations
6.
Khakifirooz, A., Kangguo Cheng, Jin Cai, et al.. (2011). High-Performance Partially Depleted SOI PFETs With In Situ Doped SiGe Raised Source/Drain and Implant-Free Extension. IEEE Electron Device Letters. 32(3). 267–269. 14 indexed citations
7.
Khakifirooz, A., Kangguo Cheng, A. Reznicek, et al.. (2011). Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length. IEEE Electron Device Letters. 33(2). 149–151. 30 indexed citations
8.
He, Hong, et al.. (2011). High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition. Thin Solid Films. 520(8). 3175–3178. 6 indexed citations
9.
Loubet, N., Thomas Adam, Mark Raymond, et al.. (2011). Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices. Thin Solid Films. 520(8). 3149–3154. 18 indexed citations
10.
Adam, Thomas, et al.. (2010). 300mm Cold-Wall UHV/CVD Reactor for Low-Temperature Epitaxial (100) Silicon. ECS Transactions. 33(6). 595–602. 3 indexed citations
11.
Sadana, D. K., Stephen W. Bedell, Thomas Adam, A. Reznicek, & Hong He. (2010). (Invited) Applications of Epitaxy for Semiconductor Technology. ECS Transactions. 33(6). 59–70. 1 indexed citations
12.
Adam, Thomas, Stephen W. Bedell, A. Reznicek, et al.. (2010). Low-Temperature Epitaxial Si, SiGe, and SiC in a 300mm UHV/CVD Reactor. ECS Transactions. 33(6). 149–154. 6 indexed citations
13.
Ronsheim, Paul, et al.. (2010). SIMS quantification of SiGe composition with low‐energy ion beams. Surface and Interface Analysis. 43(1-2). 657–660. 10 indexed citations
14.
Adam, Thomas, et al.. (2010). Low-temperature growth of epitaxial (100) silicon based on silane and disilane in a 300mm UHV/CVD cold-wall reactor. Journal of Crystal Growth. 312(23). 3473–3478. 15 indexed citations
15.
Yau, Jeng-Bang, Jin Cai, R.H. Dennard, et al.. (2009). FDSOI CMOS with dual backgate control for performance and power modulation. 84–85. 2 indexed citations
16.
Yang, Bin, K. L. Saenger, A. Reznicek, et al.. (2008). Strain Loss in Epitaxial Si:C Films Induced by Phosphorus Diffusion. ECS Transactions. 16(10). 1021–1024. 1 indexed citations
17.
Saenger, K. L., J. P. de Souza, Keith Fogel, et al.. (2007). Mixed Orientation Si–Si Interfaces by Hydrophilic Bonding and High Temperature Oxide Dissolution. Journal of The Electrochemical Society. 155(2). H80–H80. 1 indexed citations
18.
Saenger, K. L., J. P. de Souza, Keith Fogel, et al.. (2005). Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates. Applied Physics Letters. 87(22). 24 indexed citations
19.
Reznicek, A., Roland W. Scholz, Stephan Senz, & U. Gösele. (2003). Comparative TEM study of bonded silicon/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding. Materials Chemistry and Physics. 81(2-3). 277–280. 19 indexed citations
20.
Reznicek, A., Stephan Senz, Otwin Breitenstein, Roland W. Scholz, & U. Gösele. (2001). Electrical characterisation of UHV-bonded silicon interfaces. MRS Proceedings. 681. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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