B. Doris

3.5k citations

63 papers · 1.5k indexed · h-index 19

Structural Biology top 2%
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 46
- Advancements in Semiconductor Devices and Circuit Design 44
- Integrated Circuits and Semiconductor Failure Analysis 17
- Silicon Carbide Semiconductor Technologies 9
- Ferroelectric and Negative Capacitance Devices 8
- Silicon and Solar Cell Technologies 6
Surfaces, Coatings and Films top 10%
Atomic and Molecular Physics, and Optics top 10%
- Force Microscopy Techniques and Applications 4
Materials Chemistry top 10%
Biomedical Engineering
- Nanowire Synthesis and Applications 6

Co-authors: M. Ieong J. Kedzierski K. Rim Min Yang Vamsi Paruchuri Alain C. Diebold Vijay Narayanan M. Chudzik
Cited by: Structural Biology Electrical and Electronic Engineering Surfaces, Coatings and Films
Journals: IEEE Electron Device Letters (6 papers)Applied Physics Letters (5 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)
Partner nations: United States France Switzerland

In The Last Decade

B. Doris

56 papers receiving 1.5k citations

Peers

Countries citing papers authored by B. Doris

Since Specialization

Citations

This map shows the geographic impact of B. Doris's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Doris with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Doris more than expected).

Fields of papers citing papers by B. Doris

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Doris. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Doris. The network helps show where B. Doris may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Doris, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Doris Line = papers co-authored together B. Doris links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	(Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI ECS Transactions ·E. Augendre,N. Loubet,Steve Plumb,Qing Liu,守中原,Jan M. Kaster,P. Nguyen,Sylvain Barraud,Louis Hutin,S. Maı̂trejean,B. De Salvo,R. Coquand,S. Reboh,Hiroshi Onoda,B. Doris,Zohar Bloom-Ackerman,Olivier Faynot,M. Vinet	2016	2
2	Total Ionizing Dose Radiation Effects on 14 nm FinFET and SOI UTBB Technologies Zenodo (CERN European Organization for Nuclear Research) ·H.L. Hughes,P. J. McMarr,Michael L. Alles,En Xia Zhang,М.Ю. Смирнов,B. Doris,Casper Båge Von Sivers,Richard G. Southwick,P. Oldiges	2015	39
3	Elastic relaxation in intrinsically-strained Fins: Simulations, physical and electrical characterization F. Allibert,P. Morin,Mehedi Hasan,S. Leonhardt,W. Schwarzenbach,N. Loubet,A. Khakifirooz,B. J. DeSalvo,B. Doris	2014	0
4	Optimization of SiC:P Raised Source Drain Epitaxy for Planar 20nm Fully Depleted SOI MOSFET Structures ECS Transactions ·Ю. А. Алябышева,Toshiharu Nagumo,Thomas Adam,Qing Liu,Mark Raymond,Sushant Jadhav,A. Khakifirooz,Frank Treubel,Prasanna Khare,Vamsi Paruchuri,B. Doris,G. Ferrari	2013	1
5	Fully-depleted planar technologies and static RAM Terence B. Hook,Kangguo Cheng,B. Doris,A. Khakifirooz,J. Anan,S. Ponoth,C. Radens,M. Vinet	2013	1
6	Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs IEEE Electron Device Letters ·A. Khakifirooz,Kangguo Cheng,Ю. А. Алябышева,Toshiharu Nagumo,A. Reznicek,Qing Liu,Pinoti Hw,L. F. Edge,Hong He,J. Kuss,F. Allibert,Bich-Yen Nguyen,B. Doris,G. Shahidi	2013	10
7	Device design considerations for next generation CMOS technology: Planar FDSOI and FinFET (Invited) B. Doris,K.W.E. Cheng,A. Khakifirooz,Álvaro de Souza Maiotti,M. Vinet	2013	9
8	High-Performance Partially Depleted SOI PFETs With In Situ Doped SiGe Raised Source/Drain and Implant-Free Extension IEEE Electron Device Letters ·A. Khakifirooz,Kangguo Cheng,Jin Cai,Sven-Erik Ra,T.G. Pearce,A. Reznicek,Thomas Adam,L. F. Edge,Huiming Bu,B. Doris,G. Shahidi	2011	14
9	Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length IEEE Electron Device Letters ·A. Khakifirooz,Kangguo Cheng,A. Reznicek,Thomas Adam,Ю. А. Алябышева,Hong He,J. Kuss,Juntao Li,T.G. Pearce,S. Ponoth,Laura James,Qing Liu,B. Doris,G. Shahidi	2011	30
10	Assessment of fully-depleted planar CMOS for low power complex circuit operation Zhibin Ren,S. Mehta,Jian Cai,S. Wu,麦麦提.吐尔逊,T. Kanarsky,S. Kanakasabapathy,L. F. Edge,Brandon Tanji,Karoline Giele Martins de Aguiar,Bruno Lyra,K. Paulsen,P. Kulkarni,R.B. Lincoln,Kangguo Cheng,A. Khakifirooz,B. Doris,H. Bu,Dev Prakash Singh Rathour	2011	4
11	Strain Engineering for Fully-Depleted SOI Devices ECS Meeting Abstracts ·A. Khakifirooz,T.G. Pearce,Stephen W. Bedell,Sushant Jadhav,D. K. Sadana,B. Doris,G. Shahidi	2010	0
12	Copper Contact for 22 nm and Beyond: Device Performance and Reliability Evaluation IEEE Electron Device Letters ·Soon‐Cheon Seo,C.-C. Yang,Miaomiao Wang,F. Monsieur,Lahir Shaik Adam,Jeffrey B. Johnson,哲史飯村,Nancey GreenLeigh,Kangguo Cheng,J. H. Stathis,B. Doris	2010	5
13	(Invited) Strain Engineering for Fully-Depleted SOI Devices ECS Transactions ·A. Khakifirooz,T.G. Pearce,Stephen W. Bedell,Sushant Jadhav,D. K. Sadana,B. Doris,G. Shahidi	2010	1
14	Thickness Measurement of Thin-metal Films by Optical Metrology AIP conference proceedings ·Vimal Kamineni,M. Raymond,Eric Bersch,B. Doris,Alain C. Diebold,Erik M. Secula,David G. Seiler,Rajinder P. Khosla,Daniel Herr,C. Michael Garner,Robert McDonald	2009	1
15	Silicon Device Scaling to the Sub-10-nm Regime ChemInform ·M. Ieong,B. Doris,J. Kedzierski,K. Rim,Min Yang	2005	6
16	Silicon Device Scaling to the Sub-10-nm Regime Science ·M. Ieong,B. Doris,J. Kedzierski,K. Rim,Min Yang	2004	459
17	Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography Physical Review Letters ·M. Gribelyuk,Martha R. McCartney,Jing Li,Ch. S. N. Murthy,Paul Ronsheim,B. Doris,J. S. McMurray,S. Hegde,David J. Smith	2002	88
18	Molybdenum contamination in low-temperature epitaxial silicon films grown by remote plasma chemical vapor deposition Applied Physics Letters ·Ravindra Sharma,Denise A. Tatum,B. Doris,S. Banerjee	1996	2
19	<title>Ex-situ and in-situ probing of Column IV interfaces using optical second harmonic generation</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Jerry I. Dadap,Jean Pierre Vignacourt,X. Hu,John G. Ekerdt,M. C. Downer,B. Doris,J. Lowell,Alain C. Diebold	1994	1
20	A survey of non‐destructive surface characterization methods used to insure reliable gate oxide fabrication for silicon IC devices Surface and Interface Analysis ·Alain C. Diebold,B. Doris	1993	20

About B. Doris

B. Doris is a scholar working on Electrical and Electronic Engineering, Structural Biology, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 63 papers that have together received 1.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (46 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers), Silicon Carbide Semiconductor Technologies (9 papers), Ferroelectric and Negative Capacitance Devices (8 papers), Silicon and Solar Cell Technologies (6 papers), Nanowire Synthesis and Applications (6 papers) and Force Microscopy Techniques and Applications (4 papers). The work is most often cited by research in Structural Biology (75 citations), Electrical and Electronic Engineering (1.3k citations), Surfaces, Coatings and Films (75 citations), Atomic and Molecular Physics, and Optics (323 citations) and Materials Chemistry (364 citations). B. Doris has collaborated with scholars based in United States, France and Switzerland. Frequent co-authors include M. Ieong, J. Kedzierski, K. Rim, Min Yang, Vamsi Paruchuri, Alain C. Diebold, Vijay Narayanan, M. Chudzik, Agnese Callegari and J. H. Stathis. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Surface and Interface Analysis and Thin Solid Films.

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