Huiming Bu

856 total citations · 1 hit paper
21 papers, 475 citations indexed

About

Huiming Bu is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Huiming Bu has authored 21 papers receiving a total of 475 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 4 papers in Biomedical Engineering and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Huiming Bu's work include Advancements in Semiconductor Devices and Circuit Design (19 papers), Semiconductor materials and devices (18 papers) and Ferroelectric and Negative Capacitance Devices (4 papers). Huiming Bu is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (19 papers), Semiconductor materials and devices (18 papers) and Ferroelectric and Negative Capacitance Devices (4 papers). Huiming Bu collaborates with scholars based in United States, Japan and South Korea. Huiming Bu's co-authors include Kaustav Banerjee, Wei Cao, T. Ghani, Min Cao, M. Vinet, Sungwoo Hwang, Shinichi Takagi, A. Khakifirooz, B. Doris and Kangguo Cheng and has published in prestigious journals such as Nature, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Huiming Bu

17 papers receiving 452 citations

Hit Papers

The future transistors 2023 2026 2024 2025 2023 50 100 150 200 250

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Huiming Bu United States 8 396 167 102 59 20 21 475
Seong‐Wan Ryu South Korea 13 459 1.2× 133 0.8× 75 0.7× 46 0.8× 28 1.4× 33 523
Ran Cheng China 14 615 1.6× 117 0.7× 132 1.3× 101 1.7× 8 0.4× 78 657
Senfeng Zeng China 9 338 0.9× 332 2.0× 89 0.9× 28 0.5× 22 1.1× 12 472
Yong Du China 9 343 0.9× 132 0.8× 127 1.2× 129 2.2× 10 0.5× 18 432
Fida Ali South Korea 14 337 0.9× 529 3.2× 102 1.0× 64 1.1× 21 1.1× 28 621
Jiahan Yu China 12 387 1.0× 220 1.3× 144 1.4× 100 1.7× 9 0.5× 35 505
Gaobo Xu China 13 648 1.6× 157 0.9× 91 0.9× 33 0.6× 27 1.4× 89 677
Azimkhan Kozhakhmetov United States 12 238 0.6× 339 2.0× 42 0.4× 45 0.8× 13 0.7× 18 436
Annie Kumar Singapore 12 351 0.9× 109 0.7× 77 0.8× 42 0.7× 22 1.1× 27 367
Yuye Kang Singapore 16 657 1.7× 216 1.3× 105 1.0× 67 1.1× 16 0.8× 68 706

Countries citing papers authored by Huiming Bu

Since Specialization
Citations

This map shows the geographic impact of Huiming Bu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Huiming Bu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Huiming Bu more than expected).

Fields of papers citing papers by Huiming Bu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Huiming Bu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Huiming Bu. The network helps show where Huiming Bu may publish in the future.

Co-authorship network of co-authors of Huiming Bu

This figure shows the co-authorship network connecting the top 25 collaborators of Huiming Bu. A scholar is included among the top collaborators of Huiming Bu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Huiming Bu. Huiming Bu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cao, Wei, Huiming Bu, M. Vinet, et al.. (2023). The future transistors. Nature. 620(7974). 501–515. 288 indexed citations breakdown →
2.
3.
Young, Anthony, Seunghyun Song, Nicholas A. Lanzillo, et al.. (2023). Next-generation logic design architecture for vertical-transport nanosheets. 20–20.
4.
Frougier, Julien, Hemanth Jagannathan, Brent Anderson, et al.. (2022). CMOS Technology Beyond FINFET : Challenges and Opportunities. 1 indexed citations
5.
Xie, Ruilong, Heng Wu, Julien Frougier, et al.. (2020). Parasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet Transistors. 31–33. 1 indexed citations
6.
Wang, Miaomiao, Jingyun Zhang, Huimei Zhou, et al.. (2019). Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor. 1–6. 22 indexed citations
7.
Gluschenkov, Oleg, Jody Fronheiser, Juntao Li, et al.. (2016). Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology. IEEE Electron Device Letters. 37(11). 1371–1374. 47 indexed citations
8.
Paul, Abhijeet, Chun-Chen Yeh, T. Standaert, et al.. (2013). Fin width scaling for improved short channel control and performance in aggressively scaled channel length SOI finFETs. 1–2. 1 indexed citations
9.
Lin, Chung-Hsun, Wilfried Haensch, Phil Oldiges, et al.. (2011). Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond. Symposium on VLSI Technology. 16–17. 22 indexed citations
10.
Khakifirooz, A., Kangguo Cheng, Jin Cai, et al.. (2011). High-Performance Partially Depleted SOI PFETs With In Situ Doped SiGe Raised Source/Drain and Implant-Free Extension. IEEE Electron Device Letters. 32(3). 267–269. 14 indexed citations
11.
Bu, Huiming. (2011). FINFET technology a substrate perspective. 7 indexed citations
12.
Maitra, K., A. Khakifirooz, Veeraraghavan Basker, et al.. (2011). Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- $\kappa$/Metal-Gate nFinFETs for High-Performance Logic Applications. IEEE Electron Device Letters. 32(6). 713–715. 19 indexed citations
13.
14.
Wang, Miaomiao, Kangguo Cheng, A. Khakifirooz, et al.. (2010). HOT-carrier degradation in undoped-body ETSOI FETS and SOI FINFETS. 9. 1099–1104. 4 indexed citations
15.
Maitra, K., Chung-Hsun Lin, A. Kerber, et al.. (2010). Extraction of Effective Oxide Thickness for SOI FINFETs With High- $\kappa$/Metal Gates Using the Body Effect. IEEE Electron Device Letters. 31(7). 650–652. 4 indexed citations
16.
Cheng, Kangguo, A. Khakifirooz, L. F. Edge, et al.. (2010). Challenges and Solutions of Extremely Thin SOI (ETSOI) for CMOS Scaling to 22nm Node and Beyond. ECS Transactions. 27(1). 951–957. 3 indexed citations
17.
Khakifirooz, A., Kangguo Cheng, B. Jagannathan, et al.. (2010). Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond. 152–153. 27 indexed citations
18.
Huang, Elbert, Eric Joseph, Huiming Bu, et al.. (2008). Low-k spacers for advanced low power CMOS devices with reduced parasitic capacitances. 19–20. 4 indexed citations
19.
Shi, Yi, Bo Shen, Huiming Bu, et al.. (2002). Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels. Japanese Journal of Applied Physics. 41(Part 1, No. 4B). 2363–2366. 1 indexed citations
20.
Shi, Yi, et al.. (2000). CHARGING DYNAMICS OF Si-QUANTUM DOTS IN TUNNEL CAPACITOR. Acta Physica Sinica. 49(10). 2037–2037. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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