J. Faltermeier

482 total citations
6 papers, 115 citations indexed

About

J. Faltermeier is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Faltermeier has authored 6 papers receiving a total of 115 indexed citations (citations by other indexed papers that have themselves been cited), including 6 papers in Electrical and Electronic Engineering, 2 papers in Biomedical Engineering and 1 paper in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Faltermeier's work include Semiconductor materials and devices (6 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Molecular Junctions and Nanostructures (2 papers). J. Faltermeier is often cited by papers focused on Semiconductor materials and devices (6 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Molecular Junctions and Nanostructures (2 papers). J. Faltermeier collaborates with scholars based in United States, Austria and Switzerland. J. Faltermeier's co-authors include T. Standaert, T. Yamashita, V. Basker, B. Doris, J. A. Ott, N. Loubet, Hemanth Jagannathan, Isaac Lauer, Michael Guillorn and Chun-Chen Yeh and has published in prestigious journals such as IEEE Electron Device Letters and IEEE Transactions on Semiconductor Manufacturing.

In The Last Decade

J. Faltermeier

6 papers receiving 112 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Faltermeier United States	4	115	26	7	3	2	6	115
V. Basker United States	5	144 1.3×	26 1.0×	9 1.3×	6 2.0×	2 1.0×	6	147
K. Vaed United States	5	140 1.2×	17 0.7×	5 0.7×	2 0.7×		7	142
Kab-Jin Nam South Korea	5	145 1.3×	22 0.8×	16 2.3×	2 0.7×		8	149
S. Chouksey United States	4	63 0.5×	16 0.6×	4 0.6×	3 1.0×		4	64
P. Saunders United States	4	118 1.0×	34 1.3×	9 1.3×	10 3.3×	2 1.0×	8	130
K. Okano Japan	7	155 1.3×	19 0.7×	5 0.7×	7 2.3×		15	158
T.L. Lee Taiwan	4	104 0.9×	19 0.7×	6 0.9×	7 2.3×		6	107
J. Jopling United States	4	113 1.0×	27 1.0×	3 0.4×	6 2.0×	1 0.5×	6	114
C. D'Emic United States	4	137 1.2×	29 1.1×	8 1.1×	12 4.0×		5	138
Zheng Tao Belgium	4	39 0.3×	13 0.5×	6 0.9×	4 1.3×	2 1.0×	11	43

Countries citing papers authored by J. Faltermeier

Since Specialization

Citations

This map shows the geographic impact of J. Faltermeier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Faltermeier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Faltermeier more than expected).

Fields of papers citing papers by J. Faltermeier

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Faltermeier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Faltermeier. The network helps show where J. Faltermeier may publish in the future.

Co-authorship network of co-authors of J. Faltermeier

This figure shows the co-authorship network connecting the top 25 collaborators of J. Faltermeier. A scholar is included among the top collaborators of J. Faltermeier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Faltermeier. J. Faltermeier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

6 of 6 papers shown

1.

Lauer, Isaac, N. Loubet, J. A. Ott, et al.. (2015). Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance. 50 indexed citations

2.

Bryant, A., Terence B. Hook, Chun-Chen Yeh, et al.. (2013). Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs. 13.5.1–13.5.4. 26 indexed citations

3.

Wang, Miaomiao, et al.. (2013). Superior PBTI Reliability for SOI FinFET Technologies and Its Physical Understanding. IEEE Electron Device Letters. 34(7). 837–839. 18 indexed citations

4.

Maitra, K., A. Khakifirooz, Veeraraghavan Basker, et al.. (2011). Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- $\kappa$/Metal-Gate nFinFETs for High-Performance Logic Applications. IEEE Electron Device Letters. 32(6). 713–715. 19 indexed citations

5.

Gambino, J., M. Weybright, J. Faltermeier, & A. Domenicucci. (2002). Thermal stability of WSi/sub 2/ polycide structures for 1 Gbit DRAMs. 355. 259–261. 1 indexed citations

6.

Dobuzinsky, D., et al.. (2002). High yielding self-aligned contact process for a 0.150-μm DRAM technology. IEEE Transactions on Semiconductor Manufacturing. 15(2). 223–228. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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