Kangguo Cheng

1.7k total citations
56 papers, 773 citations indexed

About

Kangguo Cheng is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Ceramics and Composites. According to data from OpenAlex, Kangguo Cheng has authored 56 papers receiving a total of 773 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 10 papers in Ceramics and Composites. Recurrent topics in Kangguo Cheng's work include Semiconductor materials and devices (39 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Glass properties and applications (10 papers). Kangguo Cheng is often cited by papers focused on Semiconductor materials and devices (39 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Glass properties and applications (10 papers). Kangguo Cheng collaborates with scholars based in United States, China and South Korea. Kangguo Cheng's co-authors include Qiang Cai, Joseph W. Lyding, A. Khakifirooz, K. Hess, W. R. Johnson, M. Chen, Jinju Lee, B. Doris, William E. McMahon and A. Haggag and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Kangguo Cheng

54 papers receiving 745 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kangguo Cheng United States 19 495 212 185 123 89 56 773
Qinghua Yang China 15 424 0.9× 518 2.4× 199 1.1× 87 0.7× 93 1.0× 59 659
Jonathan T. Goldstein United States 16 479 1.0× 392 1.8× 48 0.3× 195 1.6× 88 1.0× 63 762
А. Д. Плехович Russia 13 176 0.4× 355 1.7× 307 1.7× 82 0.7× 32 0.4× 67 453
Robert Miklos United States 14 351 0.7× 331 1.6× 231 1.2× 90 0.7× 56 0.6× 26 553
Josef C. Lapp United States 10 167 0.3× 522 2.5× 571 3.1× 79 0.6× 23 0.3× 29 653
G. Yu. Shakhgil’dyan Russia 15 86 0.2× 199 0.9× 213 1.2× 91 0.7× 183 2.1× 56 461
Shicheng Yu Germany 23 1.1k 2.2× 273 1.3× 31 0.2× 73 0.6× 30 0.3× 58 1.3k
Xiaobing Luo China 13 231 0.5× 301 1.4× 34 0.2× 50 0.4× 34 0.4× 40 456
Shaowei Feng China 14 331 0.7× 552 2.6× 247 1.3× 59 0.5× 25 0.3× 23 649

Countries citing papers authored by Kangguo Cheng

Since Specialization
Citations

This map shows the geographic impact of Kangguo Cheng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kangguo Cheng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kangguo Cheng more than expected).

Fields of papers citing papers by Kangguo Cheng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kangguo Cheng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kangguo Cheng. The network helps show where Kangguo Cheng may publish in the future.

Co-authorship network of co-authors of Kangguo Cheng

This figure shows the co-authorship network connecting the top 25 collaborators of Kangguo Cheng. A scholar is included among the top collaborators of Kangguo Cheng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kangguo Cheng. Kangguo Cheng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cheng, Kangguo, Heng Wu, Juntao Li, et al.. (2020). Improved Air Spacer for Highly Scaled CMOS Technology. IEEE Transactions on Electron Devices. 67(12). 5355–5361. 9 indexed citations
2.
3.
Nguyen, S., Kangguo Cheng, Christian Penny, et al.. (2018). Pinch Off Plasma Chemical Vapor Deposition Process and Material Technology for Nano-Device Air Gap/Spacer Formation. ECS Meeting Abstracts. MA2018-01(22). 1371–1371. 1 indexed citations
4.
Cheng, Kangguo & A. Khakifirooz. (2016). Fully depleted SOI (FDSOI) technology. Science China Information Sciences. 59(6). 40 indexed citations
5.
Hook, Terence B., Kangguo Cheng, B. Doris, et al.. (2013). Fully-depleted planar technologies and static RAM. 1 indexed citations
6.
Allibert, F., Kangguo Cheng, M. Vinet, et al.. (2012). Evaluation of sSOI wafers for 22nm node and beyond. 1–2. 3 indexed citations
7.
Ren, Zhibin, S. Mehta, Jian Cai, et al.. (2011). Assessment of fully-depleted planar CMOS for low power complex circuit operation. 10. 15.5.1–15.5.4. 4 indexed citations
8.
Khakifirooz, A., Kangguo Cheng, A. Reznicek, et al.. (2011). Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length. IEEE Electron Device Letters. 33(2). 149–151. 30 indexed citations
9.
Khakifirooz, A., Kangguo Cheng, Jin Cai, et al.. (2011). High-Performance Partially Depleted SOI PFETs With In Situ Doped SiGe Raised Source/Drain and Implant-Free Extension. IEEE Electron Device Letters. 32(3). 267–269. 14 indexed citations
10.
Seo, Soon‐Cheon, C.-C. Yang, Miaomiao Wang, et al.. (2010). Copper Contact for 22 nm and Beyond: Device Performance and Reliability Evaluation. IEEE Electron Device Letters. 31(12). 1452–1454. 5 indexed citations
11.
Liao, Chi-Chih, et al.. (2008). Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts. Journal of Crystal Growth. 311(7). 1958–1961. 4 indexed citations
12.
Parkinson, P. M. Saz, M. Chudzik, Kangguo Cheng, et al.. (2004). Novel techniques for scaling deep trench DRAM capacitor technology to 0.11 μm and beyond. ed 33. 21–24. 4 indexed citations
13.
Cheng, Kangguo & Joseph W. Lyding. (2003). Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect. IEEE Electron Device Letters. 24(7). 487–489. 5 indexed citations
14.
Cheng, Kangguo & Joseph W. Lyding. (2003). Corrections to "An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps". IEEE Electron Device Letters. 24(11). 710–710. 1 indexed citations
15.
Hersam, Mark C., et al.. (2002). Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D. Applied Physics Letters. 80(2). 201–203. 21 indexed citations
16.
Cheng, Kangguo. (2001). Evaluation of crystallization kinetics of glasses by non-isothermal analysis. Journal of Materials Science. 36(4). 1043–1048. 38 indexed citations
17.
Cheng, Kangguo, Jinju Lee, Zhi Chen, et al.. (2001). Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices. Microelectronic Engineering. 56(3-4). 353–358. 3 indexed citations
18.
Hess, K., et al.. (2001). The physics of determining chip reliability. IEEE Circuits and Devices Magazine. 17(3). 33–38. 22 indexed citations
19.
Cheng, Kangguo, Jean‐Pierre Leburton, K. Hess, & Joseph W. Lyding. (2001). On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal–oxide–semiconductor field-effect transistors. Applied Physics Letters. 79(6). 863–865. 5 indexed citations
20.
Cheng, Kangguo. (1999). A Criterion for Evaluating the Thermal Stability of Glasses. The Journal of Physical Chemistry B. 103(39). 8272–8276. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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