G. Freeman
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- Radio Frequency Integrated Circuit Design 54
- Advancements in Semiconductor Devices and Circuit Design 49
- Semiconductor materials and devices 44
- 3D IC and TSV technologies 13
- Integrated Circuits and Semiconductor Failure Analysis 10
- Electrostatic Discharge in Electronics 7
- Silicon Carbide Semiconductor Technologies 7
- Hardware and Architecture top 10%
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- Semiconductor Quantum Structures and Devices 10
- Co-authors
- Jae-Sung RiehB. JagannathanD. GreenbergD. AhlgrenS. SubbannaAlvin JosephJohn D. CresslerAndy Stricker
- Cited by
- Electrical and Electronic EngineeringHardware and ArchitectureAtomic and Molecular Physics, and Optics
- Journals
- IEEE Transactions on Electron Devices (7 papers)IEEE Transactions on Nuclear Science (6 papers)Solid-State Electronics (3 papers)
- Partner nations
- United StatesSouth KoreaTaiwan
In The Last Decade
G. Freeman
81 papers receiving 1.4k citations
Peers
Comparison fields: 5 of 34
- Electrical and Electronic Engineering 1.5k
- Hardware and Architecture 43
- Atomic and Molecular Physics, and Optics 183
- Condensed Matter Physics 39
- Biomedical Engineering 130
Countries citing papers authored by G. Freeman
This map shows the geographic impact of G. Freeman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Freeman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Freeman more than expected).
Fields of papers citing papers by G. Freeman
This network shows the impact of papers produced by G. Freeman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Freeman. The network helps show where G. Freeman may publish in the future.
Co-authorship network
The 25 scholars most cited alongside G. Freeman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2018 | 21 | |
| 2 | 2015 | 3 | |
| 3 | Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices | 2013 | 30 |
| 4 | 2011 | 13 | |
| 5 | 2011 | 19 | |
| 6 | 2009 | 5 | |
| 7 | Effective Drive Current in CMOS Inverters for Sub-45nm Technologies | 2008 | 6 |
| 8 | 2006 | 9 | |
| 9 | 2006 | 3 | |
| 10 | 2005 | 8 | |
| 11 | 2004 | 36 | |
| 12 | Sige HBT performance and reliability trends through fT of 350GHz | 2003 | 5 |
| 13 | 2003 | 4 | |
| 14 | 2003 | 3 | |
| 15 | 2003 | 20 | |
| 16 | 2003 | 7 | |
| 17 | 2003 | 5 | |
| 18 | 2003 | 19 | |
| 19 | 2002 | 0 | |
| 20 | SiGe HBT Performance Improvements from Lateral Scaling | 1999 | 8 |
About G. Freeman
G. Freeman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 85 papers that have together received 1.5k indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (54 papers), Advancements in Semiconductor Devices and Circuit Design (49 papers), Semiconductor materials and devices (44 papers), 3D IC and TSV technologies (13 papers), Semiconductor Quantum Structures and Devices (10 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Electrostatic Discharge in Electronics (7 papers) and Silicon Carbide Semiconductor Technologies (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.5k citations), Hardware and Architecture (43 citations) and Atomic and Molecular Physics, and Optics (183 citations). G. Freeman has collaborated with scholars based in United States, South Korea and Taiwan. Frequent co-authors include Jae-Sung Rieh, B. Jagannathan, D. Greenberg, D. Ahlgren, S. Subbanna, Alvin Joseph, John D. Cressler, Andy Stricker, D.L. Harame and F Guarin. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, Solid-State Electronics, IEEE Electron Device Letters and IBM Journal of Research and Development.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.