G. Freeman

3.2k total citations
85 papers, 1.5k citations indexed

About

G. Freeman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, G. Freeman has authored 85 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 84 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 3 papers in Condensed Matter Physics. Recurrent topics in G. Freeman's work include Radio Frequency Integrated Circuit Design (54 papers), Advancements in Semiconductor Devices and Circuit Design (49 papers) and Semiconductor materials and devices (44 papers). G. Freeman is often cited by papers focused on Radio Frequency Integrated Circuit Design (54 papers), Advancements in Semiconductor Devices and Circuit Design (49 papers) and Semiconductor materials and devices (44 papers). G. Freeman collaborates with scholars based in United States, South Korea and Taiwan. G. Freeman's co-authors include Jae-Sung Rieh, B. Jagannathan, D. Greenberg, D. Ahlgren, S. Subbanna, Alvin Joseph, John D. Cressler, Andy Stricker, D.L. Harame and F Guarin and has published in prestigious journals such as Proceedings of the IEEE, IEEE Journal of Solid-State Circuits and Applied Surface Science.

In The Last Decade

G. Freeman

81 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Freeman United States 22 1.5k 183 130 60 43 85 1.5k
B. Jagannathan United States 20 1.1k 0.7× 167 0.9× 109 0.8× 82 1.4× 18 0.4× 55 1.1k
L. Wagner United States 21 1.5k 1.0× 145 0.8× 199 1.5× 57 0.9× 44 1.0× 59 1.6k
N. Zamdmer United States 21 1.4k 1.0× 155 0.8× 223 1.7× 34 0.6× 40 0.9× 48 1.5k
F.M. Klaassen Netherlands 17 965 0.7× 141 0.8× 132 1.0× 63 1.1× 18 0.4× 51 1.0k
M. Ida Japan 22 1.5k 1.0× 503 2.7× 141 1.1× 27 0.5× 18 0.4× 139 1.6k
A. Gutierrez-Aitken United States 15 632 0.4× 178 1.0× 143 1.1× 14 0.2× 13 0.3× 74 646
Timothy J. Maloney United States 18 1.0k 0.7× 235 1.3× 69 0.5× 49 0.8× 76 1.8× 71 1.1k
K. Stein United States 14 601 0.4× 103 0.6× 81 0.6× 35 0.6× 18 0.4× 40 650
Andy Stricker United States 13 741 0.5× 164 0.9× 73 0.6× 25 0.4× 11 0.3× 23 772
Alexandre Siligaris France 18 901 0.6× 69 0.4× 76 0.6× 20 0.3× 11 0.3× 77 942

Countries citing papers authored by G. Freeman

Since Specialization
Citations

This map shows the geographic impact of G. Freeman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Freeman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Freeman more than expected).

Fields of papers citing papers by G. Freeman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Freeman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Freeman. The network helps show where G. Freeman may publish in the future.

Co-authorship network of co-authors of G. Freeman

This figure shows the co-authorship network connecting the top 25 collaborators of G. Freeman. A scholar is included among the top collaborators of G. Freeman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Freeman. G. Freeman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Freeman, G., Tosihide H. YOSIDA, Karen Nummy, et al.. (2015). Performance-optimized gate-first 22-nm SOI technology with embedded DRAM. IBM Journal of Research and Development. 59(1). 5:1–5:14. 3 indexed citations
2.
Wachnik, R., L. Wagner, J. Johnson, et al.. (2013). Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices. Symposium on VLSI Technology. 30 indexed citations
3.
Iyer, Subramanian S., G. Freeman, A. Chou, et al.. (2011). 45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications. IBM Journal of Research and Development. 55(3). 5:1–5:14. 13 indexed citations
4.
Arora, Rajan, En Xia Zhang, John D. Cressler, et al.. (2011). Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS. IEEE Transactions on Nuclear Science. 58(6). 2830–2837. 19 indexed citations
5.
Cressler, John D., et al.. (2009). Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology. IEEE Transactions on Nuclear Science. 56(4). 1914–1919. 5 indexed citations
6.
Hu, Jenny, Jae-Eun Park, G. Freeman, R. Wachnik, & Philip Wong. (2008). Effective Drive Current in CMOS Inverters for Sub-45nm Technologies. TechConnect Briefs. 3(2008). 829–832. 6 indexed citations
7.
Liang, Qingqing, R. Krithivasan, Yuan Lu, et al.. (2006). A New Negative-Differential-Resistance Effect in 350 GHz SiGe HBTs Operating at Cryogenic Temperatures. 159–160. 3 indexed citations
8.
Liang, Qingqing, Yuan Lu, Ying Li, et al.. (2006). Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs. Solid-State Electronics. 50(6). 964–972. 9 indexed citations
9.
Jagannathan, B., et al.. (2005). Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors. 115–118. 8 indexed citations
10.
Chen, Yi‐Jan Emery, Wei-Min Lance Kuo, Jongsoo Lee, et al.. (2005). A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology. IEEE Transactions on Microwave Theory and Techniques. 53(5). 1672–1681. 32 indexed citations
11.
Freeman, G., B. Jagannathan, Zhijian Yang, et al.. (2003). Sige HBT performance and reliability trends through fT of 350GHz. 332–338. 5 indexed citations
12.
13.
Johnson, Jeffrey B., et al.. (2003). Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD. Applied Surface Science. 224(1-4). 324–329. 3 indexed citations
14.
Greenberg, D., Susan L. Sweeney, B. Jagannathan, G. Freeman, & D. Ahlgren. (2003). Noise performance scaling in high-speed silicon RF technologies. 22–25. 10 indexed citations
15.
Jagannathan, B., Mounir Meghelli, Jae-Sung Rieh, et al.. (2003). 3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay. IEEE Electron Device Letters. 24(5). 324–326. 28 indexed citations
16.
Ahlgren, D., Nicholas S. P. King, G. Freeman, R. Groves, & S. Subbanna. (2003). SiGe BiCMOS technology for RF device and design applications. 281–284. 5 indexed citations
17.
Liang, Qingqing, John D. Cressler, Guofu Niu, et al.. (2003). A simple 4-port parasitic de-embedding methodology for high-frequency characterization of SiGe HBTs. 357–360. 4 indexed citations
18.
Freeman, G., Jae-Sung Rieh, Zhijian Yang, & F Guarin. (2003). Reliability and performance scaling of very high speed SiGe HBTs. Microelectronics Reliability. 44(3). 397–410. 7 indexed citations
19.
20.
Freeman, G., et al.. (1999). SiGe HBT Performance Improvements from Lateral Scaling. European Solid-State Device Research Conference. 1. 724–727. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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