S.E. Laux

5.7k total citations · 2 hit papers
75 papers, 4.3k citations indexed

About

S.E. Laux is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, S.E. Laux has authored 75 papers receiving a total of 4.3k indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Electrical and Electronic Engineering, 32 papers in Atomic and Molecular Physics, and Optics and 4 papers in Biomedical Engineering. Recurrent topics in S.E. Laux's work include Advancements in Semiconductor Devices and Circuit Design (65 papers), Semiconductor materials and devices (60 papers) and Silicon Carbide Semiconductor Technologies (23 papers). S.E. Laux is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (65 papers), Semiconductor materials and devices (60 papers) and Silicon Carbide Semiconductor Technologies (23 papers). S.E. Laux collaborates with scholars based in United States, Japan and Italy. S.E. Laux's co-authors include Massimo V. Fischetti, D.J. Frank, Frank Stern, P. M. Solomon, E.F. Crabbé, Arvind Kumar, Thomas N. Jackson, J. L. Freeouf, D. Chidambarrao and M. Ieong and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

S.E. Laux

74 papers receiving 4.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

1996 1.2k citations Massimo V. Fischetti, S.E. Laux profile →
Monte Carlo study of electron transport in silicon inversion layers

1993 386 citations Massimo V. Fischetti, S.E. Laux profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S.E. Laux United States	30	3.7k	1.7k	704	534	179	75	4.3k
R. J. Malik United States	29	3.1k 0.8×	3.0k 1.8×	318 0.5×	704 1.3×	305 1.7×	103	3.9k
G.A. Sai-Halasz United States	27	3.2k 0.8×	1.5k 0.9×	312 0.4×	551 1.0×	167 0.9×	67	3.6k
Kelin J. Kuhn United States	27	2.5k 0.7×	747 0.4×	591 0.8×	306 0.6×	67 0.4×	75	2.9k
Ansheng Liu United States	24	4.7k 1.3×	3.3k 2.0×	863 1.2×	991 1.9×	89 0.5×	101	5.3k
D.J. Roulston Canada	18	2.4k 0.6×	855 0.5×	343 0.5×	492 0.9×	124 0.7×	139	2.6k
Dragica Vasileska United States	26	2.5k 0.7×	1.2k 0.7×	443 0.6×	767 1.4×	257 1.4×	298	3.1k
Chih‐Tang Sah United States	31	4.4k 1.2×	1.5k 0.9×	276 0.4×	869 1.6×	170 0.9×	118	4.7k
Timothy B. Boykin United States	28	2.1k 0.5×	2.1k 1.3×	670 1.0×	737 1.4×	353 2.0×	101	3.1k
H. L. Grubin United States	16	2.3k 0.6×	1.3k 0.8×	314 0.4×	709 1.3×	179 1.0×	95	2.9k
M.R. Pinto United States	24	2.3k 0.6×	1.2k 0.7×	174 0.2×	281 0.5×	125 0.7×	82	2.5k

Countries citing papers authored by S.E. Laux

Since Specialization

Citations

This map shows the geographic impact of S.E. Laux's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.E. Laux with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.E. Laux more than expected).

Fields of papers citing papers by S.E. Laux

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.E. Laux. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.E. Laux. The network helps show where S.E. Laux may publish in the future.

Co-authorship network of co-authors of S.E. Laux

This figure shows the co-authorship network connecting the top 25 collaborators of S.E. Laux. A scholar is included among the top collaborators of S.E. Laux based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.E. Laux. S.E. Laux is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Murali, K. V. R. M., et al.. (2011). Orientation dependent complex bandstructure of Si_1−xGe_x alloys. 113–114. 2 indexed citations

2.

Laux, S.E.. (2009). Computation of Complex Band Structures in Bulk and Confined Structures. 1–2. 13 indexed citations

3.

Fischetti, Massimo V., Seonghoon Jin, Ting-wei Tang, et al.. (2009). Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source. Scholarworks (University of Massachusetts Amherst). 1–4. 11 indexed citations

4.

Laux, S.E.. (2005). Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment. 135–138. 21 indexed citations

5.

Katayama, Y. & S.E. Laux. (2004). Simulation study of tunneling devices with quantum confinement in source and drain. 95–96. 3 indexed citations

6.

Fischetti, Massimo V., S.E. Laux, & Arvind Kumar. (2004). Simulation of quantum electronic transport in small devices: a master equation approach. 19.3.1–19.3.4. 3 indexed citations

7.

Laux, S.E., Arvind Kumar, & Massimo V. Fischetti. (2003). QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries. 715–718. 12 indexed citations

8.

Ieong, M., P. M. Solomon, S.E. Laux, Hong Wong, & D. Chidambarrao. (2002). Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model. 733–736. 154 indexed citations

9.

Tiwari, S., Massimo V. Fischetti, & S.E. Laux. (2002). Overshoot in transient and steady-state in GaAs, InP, Ga/sub 0.47/In/sub 0.53/As, and InAs bipolar transistors. 7. 435–438. 1 indexed citations

10.

Laux, S.E., Arvind Kumar, & Massimo V. Fischetti. (2002). Ballistic FET modeling using QDAME: quantum device analysis by modal evaluation. IEEE Transactions on Nanotechnology. 1(4). 255–259. 38 indexed citations

11.

Laux, S.E. & Massimo V. Fischetti. (2002). Simulation of small semiconductor devices using a coupled Monte Carlo-Poisson approach. 338–346.

12.

Crabbé, E.F., J.M.C. Stork, G. Baccarani, Massimo V. Fischetti, & S.E. Laux. (2002). The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors. 463–466. 18 indexed citations

13.

Fischetti, Massimo V. & S.E. Laux. (1996). Monte Carlo Simulation of Electron Transport in Si: The First 20 Years. European Solid-State Device Research Conference. 813–820. 28 indexed citations

14.

Cole, Daniel C., E. M. Buturla, S. Furkay, et al.. (1990). The use of simulation in semiconductor technology development. Solid-State Electronics. 33(6). 591–623. 23 indexed citations

15.

Ford, C. J. B., A. B. Fowler, Jongill Hong, et al.. (1990). Gated, asymmetric rings as tunable electron interferometers. Surface Science. 229(1-3). 307–311. 30 indexed citations

16.

Fischetti, Massimo V., S.E. Laux, & D. J. DiMaria. (1989). The physics of hot-electron degradation of Si MOSFET's: Can we understand it?. Applied Surface Science. 39(1-4). 578–596. 33 indexed citations

17.

Smith, T. P., et al.. (1987). Capacitance Oscillations in One-Dimensional Electron Systems. Physical Review Letters. 59(24). 2802–2805. 77 indexed citations

18.

Laux, S.E. & B.M. Grossman. (1985). A general control-volume formulation for modeling impact ionization in semiconductor transport. IEEE Transactions on Electron Devices. 32(10). 2076–2082. 20 indexed citations

19.

Laux, S.E. & F.H. Gaensslen. (1984). A study of avalanche breakdown in scaled n-MOSFETs. 84–87. 4 indexed citations

20.

Laux, S.E.. (1981). Two-dimensional simulation of GaAs MESFETS using the finite element method. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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