S.E. Laux

5.8k citations

75 papers · 4.3k · 2 hit papers · h-index 30

Impact in

Electrical and Electronic Engineering top 1%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
Atomic and Molecular Physics, and Optics top 1%
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 73
- Advancements in Semiconductor Devices and Circuit Design 65
- Semiconductor materials and devices 60
- Silicon Carbide Semiconductor Technologies 23
- Integrated Circuits and Semiconductor Failure Analysis 11
- Silicon and Solar Cell Technologies 10
Atomic and Molecular Physics, and Optics 32
- Quantum and electron transport phenomena 15
- Semiconductor Quantum Structures and Devices 9
- Semiconductor materials and interfaces 6

Co-authors: Massimo V. Fischetti (36 shared papers)D.J. Frank (3 shared papers)Frank Stern (1 shared paper)P. M. Solomon (5 shared papers)E.F. Crabbé (3 shared papers)Arvind Kumar (7 shared papers)J. L. Freeouf (2 shared papers)Thomas N. Jackson (2 shared papers)
Journals: IEEE Transactions on Electron Devices (11 papers)Journal of Applied Physics (5 papers)IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (4 papers)Journal of Computational Electronics (4 papers)IEEE Electron Device Letters (4 papers)
Partner nations: United States Japan Italy

In The Last Decade

S.E. Laux

74 papers receiving 4.1k citations

S.E. Laux's Hit Papers

align trajectories log scale

Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys 1996 · 1.2k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1996 Journal of Applied Physics
1993 Physical review. B, Condensed matter

Peers

Countries citing papers authored by S.E. Laux

Since Specialization

Citations

This map shows the geographic impact of S.E. Laux's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.E. Laux with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.E. Laux more than expected).

Fields of papers citing papers by S.E. Laux

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.E. Laux. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.E. Laux. The network helps show where S.E. Laux may publish in the future.

Co-authors

The 25 scholars most cited alongside S.E. Laux, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S.E. Laux Line = papers co-authored together S.E. Laux links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 75 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys Journal of Applied Physics ·Massimo V. Fischetti, S.E. Laux Hit paper breakdown →	1996	1214
2	Monte Carlo study of electron transport in silicon inversion layers Physical review. B, Condensed matter ·Massimo V. Fischetti, S.E. Laux Hit paper breakdown →	1993	389
3	Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure Surface Science ·S.E. Laux, D.J. Frank, Frank Stern	1988	303
4	Techniques for small-signal analysis of semiconductor devices IEEE Transactions on Electron Devices ·S.E. Laux	1985	169
5	Understanding hot-electron transport in silicon devices: Is there a shortcut? Journal of Applied Physics ·Massimo V. Fischetti, S.E. Laux, E.F. Crabbé	1995	167
6	Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model M. Ieong, P. M. Solomon, S.E. Laux, Hong Wong, D. Chidambarrao	2002	154
7	Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFET's IEEE Transactions on Electron Devices ·Massimo V. Fischetti, S.E. Laux	1991	129
8	Effective barrier heights of mixed phase contacts: Size effects Applied Physics Letters ·J. L. Freeouf, Thomas N. Jackson, S.E. Laux, J. M. Woodall	1982	118
9	Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability Journal of Applied Physics ·Massimo V. Fischetti, S.E. Laux	2001	113
10	Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K IEEE Electron Device Letters ·S.E. Laux, Massimo V. Fischetti	1988	90
11	Size dependence of ’’effective’’ barrier heights of mixed-phase contacts Journal of Vacuum Science and Technology ·J. L. Freeouf, Thomas N. Jackson, S.E. Laux, J. M. Woodall	1982	86
12	Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects Journal of Applied Physics ·S.E. Laux, Arvind Kumar, Massimo V. Fischetti	2004	79
13	Capacitance Oscillations in One-Dimensional Electron Systems Physical Review Letters ·T. P. Smith, H. Arnot, Jongill Hong, C. M. Knoedler, S.E. Laux, H. Schmid	1987	77
14	Collector signal delay in the presence of velocity overshoot IEEE Electron Device Letters ·S.E. Laux, W. Lee	1990	61
15	Accuracy of an effective channel length/External resistance extraction algorithm for MOSFET's IEEE Transactions on Electron Devices ·S.E. Laux	1984	59
16	On the accuracy of channel length characterization of LDD MOSFET's IEEE Transactions on Electron Devices ·J.Y.-C. Sun, M.R. Wordeman, S.E. Laux	1986	56
17	Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain Applied Physics Letters ·G. M. Cohen, M. J. Rooks, J. O. Chu, S.E. Laux, P. M. Solomon, J. A. Ott, R.J. Miller, Wilfried Haensch	2007	53
18	Revisiting the analytic theory of p-n junction impedance: improvements guided by computer simulation leading to a new equivalent circuit IEEE Transactions on Electron Devices ·S.E. Laux, K. Hess	1999	52
19	On particle-mesh coupling in Monte Carlo semiconductor device simulation IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ·S.E. Laux	1996	51
20	Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model Journal of Computational Electronics ·Massimo V. Fischetti, Seonghoon Jin, Ting-wei Tang, P.M. Asbeck, (unknown), S.E. Laux, M.J.W. Rodwell, Nobuyuki Sano	2009	50

About S.E. Laux

S.E. Laux is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Computer Networks and Communications and Condensed Matter Physics, having authored 75 papers that have together received 4.3k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (65 papers), Semiconductor materials and devices (60 papers), Silicon Carbide Semiconductor Technologies (23 papers), Quantum and electron transport phenomena (15 papers), Integrated Circuits and Semiconductor Failure Analysis (11 papers), Silicon and Solar Cell Technologies (10 papers), Semiconductor Quantum Structures and Devices (9 papers) and Semiconductor materials and interfaces (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.8k citations), Atomic and Molecular Physics, and Optics (1.7k citations), Biomedical Engineering (704 citations), Condensed Matter Physics (182 citations) and Materials Chemistry (537 citations). S.E. Laux has collaborated with scholars based in United States, Japan and Italy. Frequent co-authors include Massimo V. Fischetti, D.J. Frank, Frank Stern, P. M. Solomon, E.F. Crabbé, Arvind Kumar, J. L. Freeouf, Thomas N. Jackson, D. Chidambarrao and M. Ieong. Their work appears in journals such as IEEE Transactions on Electron Devices, Journal of Applied Physics, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Journal of Computational Electronics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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S.E. Laux's Hit Papers

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