J. Cotte

802 citations

31 papers · 591 indexed · h-index 15

Impact in

Electrical and Electronic Engineering top 10%
- 3D IC and TSV technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electronic Packaging and Soldering Technologies
- Advanced MEMS and NEMS Technologies
- Radio Frequency Integrated Circuit Design
- Silicon and Solar Cell Technologies
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 30
- Semiconductor materials and devices 11
- Silicon and Solar Cell Technologies 7
- 3D IC and TSV technologies 6
- Advanced MEMS and NEMS Technologies 5
- Photonic and Optical Devices 5
- Electronic Packaging and Soldering Technologies 5
Atomic and Molecular Physics, and Optics 10
- Semiconductor Quantum Structures and Devices 5

Co-authors: T. O. Sedgwick L.P. Buchwalter John Knickerbocker Cornelia Tsang R. Polastre H. Gan C.S. Patel R. Horton
Journals: Applied Physics Letters (3 papers)Applied Surface Science (2 papers)Journal of The Electrochemical Society (2 papers)IEEE Journal of Solid-State Circuits (1 paper)Nature Communications (1 paper)
Partner nations: United States France Italy

In The Last Decade

J. Cotte

31 papers receiving 568 citations

Peers

Countries citing papers authored by J. Cotte

Since Specialization

Citations

This map shows the geographic impact of J. Cotte's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Cotte with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Cotte more than expected).

Fields of papers citing papers by J. Cotte

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Cotte. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Cotte. The network helps show where J. Cotte may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Cotte, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Cotte Line = papers co-authored together J. Cotte links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Wafer-scale integration of sacrificial nanofluidic chips for detecting and manipulating single DNA molecules Nature Communications ·Chao Wang, 信二岡崎, J. Cotte, C. Jahnes, E. G. Colgan, Robert L. Bruce, Markus Brink, José Domingo Valle Pinargote, J. Patel, Lynne Gignac, Eric Joseph, Satyavolu S. Papa Rao, Gustavo Stolovitzky, S. Polonsky, Qinghuang Lin	2017	49
2	Electrochemical Palladium Deposition for Reducing Critical Dimensions in Nanostructures Journal of The Electrochemical Society ·Aslı Şahin, Qiang Huang, J. Cotte, M. Maxmudova	2014	2
3	Dielectric Charging in Electrostatically Actuated MEMS Ohmic Switches IEEE Transactions on Device and Materials Reliability ·Zhen Peng, Cristiano Palego, Subrata Halder, James C. M. Hwang, C. Jahnes, Konstantin Etzold, J. Cotte, J. H. Magerlein	2008	7
4	3-D Silicon Integration and Silicon Packaging Technology Using Silicon Through-Vias IEEE Journal of Solid-State Circuits ·John Knickerbocker, C.S. Patel, Paul Andry, Cornelia Tsang, L.P. Buchwalter, E. Sprogis, H. Gan, R. Horton, R. Polastre, S. L. Wright, J. Cotte	2006	151
5	Analysis and modeling of curvature in copper-based mems structures fabricated using cmos interconnect technology Danny Ramayanda, Nils Høivik, C. Jahnes, J. Cotte, Xiaohu Liu	2005	7
6	Pb-free solder alloys for flip chip applications S. K. Kang, Jean Horkans, P. C. Andricacos, R. Carruthers, J. Cotte, Madhav Datta, Lucas Perbet, J. M. E. Harper, Zuben JIN, C.J. Sambucetti, Libao Shi, B. Hessel, R. A. Womersley	2003	12
7	A Low Temperature Bi-CMOS Compatible Process for MEMS RF Resonators and Filters Jennifer L. Lund, C. Jahnes, Mikkel Drøgemüller Lund, Cnam Cedric, J. Cotte, P. C. Andricacos, David E. Seeger, Benchapan Burawad	2002	20
8	Optimization of SiGe HBT technology for high speed analog and mixed-signal applications D.L. Harame, J.M.C. Stork, B.S. Meyerson, Siddhi Maruti Chavan, J. Cotte, K.A. Jenkins, John D. Cressler, P.J. Restle, E.F. Crabbé, S. Subbanna, Hsun-Yuan 許薰元;Hsu, 光伸藤田, J. Yasaitis	2002	26
9	Integrated, variable-reluctance magnetic minimotor IBM Journal of Research and Development ·E. J. O’Sullivan, Emanuel I. Cooper, L. T. Romankiw, Oketani Yuto, P. L. Trouilloud, Jean Horkans, C. Jahnes, I. Babich, S. Krongelb, S. Hegde, Deepti S.S, N. LaBianca, J. Cotte, Timothy Chainer	1998	17
10	Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere Applied Physics Letters ·Detlev Grützmacher, T. O. Sedgwick, A. Powell, M. J. Tejwani, Swaminathan P. Iyer, J. Cotte, F. Cardone	1993	48
11	113-GHz f/sub T/ graded-base SiGe HBT's IEEE Transactions on Electron Devices ·E.F. Crabbé, B.S. Meyerson, D.L. Harame, J.M.C. Stork, A.C. Megdanis, J. Cotte, J. O. Chu, マイナカムラ, C. Stanis, J.H. Comfort, G.L. Patton, S. Subbanna	1993	22
12	Growth Rate Enhancement of Heavy n‐ and p‐Type Doped Silicon Deposited by Atmospheric‐Pressure Chemical Vapor Deposition at Low Temperatures Journal of The Electrochemical Society ·P. Agnello, T. O. Sedgwick, J. Cotte	1993	22
13	Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures Applied Physics Letters ·P. Agnello, T. O. Sedgwick, Mark S. Goorsky, J. Cotte	1992	14
14	Dopant diffusion in silicides: Effect of diffusion paths Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·C. Stanis, Ο. Thomas, J. Cotte, A. Charaı̈, F. K. LeGoues, F. M. d’Heurle	1992	5
15	Diffusion of dopants in tungsten disilicide: effects of diffusion paths Applied Surface Science ·Ο. Thomas, G. Scilla, P. Gaś, J. Cotte, (unknown), R. Jalali, G. Göltz, F. M. d’Heurle	1991	4
16	55 Ghz Polysilicon-Emitter Graded Sige-Base Pnp Transistors D.L. Harame, B.S. Meyerson, E.F. Crabbé, C. Stanis, J. Cotte, J.M.C. Stork, A.C. Megdanis, G.L. Patton, S. R. Stiffler, Jeffrey B. Johnson, J.D. Warnock, J.H. Comfort, J.Y.-C. Sun	1991	17
17	p-type doping of germanium grown by molecular beam epitaxy on Ge(100) substrates Applied Physics Letters ·V. P. Kesan, Subramanian S. Iyer, J. Cotte	1991	6
18	Boron Doping in Si-MBE MRS Proceedings ·K. Eberl, Swaminathan P. Iyer, S.L. Delage, B. A. Ek, J. Cotte	1991	3
19	A 26 ps self-aligned epitaxial silicon base bipolar technology J.H. Comfort, P.-F. Lu, D.D. Tang, Kum Soo Park, J.Y.-C. Sun, B.S. Meyerson, 紀偉文, J. Warnock, John D. Cressler, PratapN Mukhopadhyaya, J. Cotte	1990	7
20	Influence des variations thermiques sur les propriétés mécaniques du cheveu International Journal of Cosmetic Science ·Aisha Allagui, Cattarin Sandro, Marcela L Ivanovic, J. Cotte	1984	3

About J. Cotte

J. Cotte is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electrochemistry, Urology and Surfaces, Coatings and Films, having authored 31 papers that have together received 591 indexed citations. Recurring topics across this work include Semiconductor materials and devices (11 papers), Silicon and Solar Cell Technologies (7 papers), 3D IC and TSV technologies (6 papers), Advanced MEMS and NEMS Technologies (5 papers), Photonic and Optical Devices (5 papers), Semiconductor Quantum Structures and Devices (5 papers), Electronic Packaging and Soldering Technologies (5 papers) and Silicon Nanostructures and Photoluminescence (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (502 citations), Atomic and Molecular Physics, and Optics (155 citations), Biomedical Engineering (150 citations), Automotive Engineering (24 citations) and Hardware and Architecture (13 citations). J. Cotte has collaborated with scholars based in United States, France and Italy. Frequent co-authors include T. O. Sedgwick, L.P. Buchwalter, John Knickerbocker, Cornelia Tsang, R. Polastre, H. Gan, C.S. Patel, R. Horton, Paul Andry and S. L. Wright. Their work appears in journals such as Applied Physics Letters, Applied Surface Science, Journal of The Electrochemical Society, IEEE Journal of Solid-State Circuits and Nature Communications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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